CM1409
LCD and Camera EMI Filter
Array with ESD Protection
Product Description
The CM1409 is a family of pi−style EMI filter arrays with ESD
protection, which integrates either six or eight filters (C−R−C) in
a small form factor, WDFN 0.50 mm pitch package. The CM1409 has
component values of 15 pF
−
100
W
−
15 pF per channel. The CM1409
has a cut−off frequency of 110 MHz and can be used in applications
with data rates up to 44 Mbps. The parts include ESD diodes on every
pin, which provide a very high level of protection for sensitive
electronic components against electrostatic discharge (ESD).
The ESD protected diodes safely dissipate ESD strikes of
±15
kV,
which even exceeds the maximum requirement of the IEC61000−4−2
international standard. Using the MIL−STD−883 (Method 3015)
specification for Human Body Model (HBM) ESD, the pins are
protected for contact discharges at greater than
±30
kV.
These devices are particularly well−suited for portable electronics
(e.g. wireless handsets, PDAs, notebook computers) because of their
small package and easy−to−use pin assignments. In particular,
the CM1409 is ideal for EMI filtering and protecting data and control
lines for the I/O data ports, LCD display and camera interface in
mobile handsets.
The CM1409 is housed in space−saving, low−profile 12− and
16−lead WDFN packages with a 0.50 mm pitch, RoHS−compliant,
lead−free finishing.
Features
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12
1
WDFN12
DE SUFFIX
CASE 511AZ
16
1
WDFN16
DE SUFFIX
CASE 511AV
BLOCK DIAGRAM
100
W
FILTER
+
ESDn*
C
GND
1 of 6 or 8 EMI/RFI + ESD Channels
*See Package/Pinout Diagrams for Expanded Pin Information.
R
15 pF
C
15 pF
FILTER
+
ESDn*
•
Six or Eight Channels of EMI Filtering with Integrated ESD
•
•
•
•
•
•
•
•
MARKING DIAGRAM
N09E
N098E
Protection
Pi−Style EMI Filters in a Capacitor−Resistor−Capacitor (C−R−C)
Network
±15
kV ESD Protection on Each Channel
(IEC 61000−4−2 Level 4, Contact Discharge)
±30
kV ESD Protection on Each Channel (HBM)
Greater than
−35
dB Attenuation (Typical) at 1 GHz
WDFN Package with 0.50 mm Lead Pitch:
•
6−ch. = 12−lead WDFN
•
8−ch. = 16−lead WDFN
Tiny WDFN Package Size:
•
12−lead: 3.0 mm x 1.35 mm
•
16−lead: 4.0 mm x 1.60 mm
Increased Robustness against Vertical Impacts During
Manufacturing Process
These Devices are Pb−Free and are RoHS Compliant
N09E = CM1409−06DE
N098E = CM1409−08DE
ORDERING INFORMATION
Device
CM1409−06DE
CM1409−08DE
Package
WDFN12
(Pb−Free)
WDFN16
(Pb−Free)
Shipping
†
3000/Tape & Reel
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Applications
•
LCD and Camera Data Lines in Mobile Handsets
•
I/O Port Protection for Mobile Handsets, Notebook
Computers, PDAs etc.
•
EMI Filtering for Data Ports in Cell Phones, PDAs or
Notebook Computers
©
Semiconductor Components Industries, LLC, 2011
•
Wireless Handsets
•
Handheld PCs/PDAs
•
LCD and Camera Modules
March, 2011
−
Rev. 3
1
Publication Order Number:
CM1409/D
CM1409
SPECIFICATIONS
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameter
Storage Temperature Range
DC Power per Resistor
DC Package Power Rating
Rating
–65 to +150
100
500
Units
°C
mW
mW
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 3. STANDARD OPERATING CONDITIONS
Parameter
Operating Temperature Range
Rating
–40 to +85
Units
°C
Table 4. ELECTRICAL OPERATING CHARACTERISTICS
(Note 1)
Symbol
R
C
TOTAL
C
V
DIODE
I
LEAK
V
SIG
Resistance
Total Channel Capacitance
Capacitance C
1
Standoff Voltage
Diode Leakage Current
(Reverse Bias)
Signal Clamp Voltage
Positive Clamp
Negative Clamp
In−system ESD Withstand Voltage
a) Human Body Model,
MIL−STD−883, Method 3015
b) Contact Discharge per
IEC 61000−4−2 Level 4
Dynamic Resistance
Positive
Negative
Cut−off Frequency
Z
SOURCE
= 50
W,
Z
LOAD
= 50
W
Absolute Attenuation @ 1GHz from
0 dB Level
Absolute Attenuation @ 800 MHz to
6 GHz from 0 dB Level
Channel R = 100
W,
Channel C = 15 pF
Z
SOURCE
= 50
W,
Z
LOAD
= 50
W,
DC Bias = 0 V (Notes 1 and 3)
Z
SOURCE
= 50
W,
Z
LOAD
= 50
W,
DC Bias = 0 V (Notes 1 and 3)
At 2.5 VDC Reverse Bias, 1 MHz, 30 mVAC
At 2.5 VDC Reverse Bias, 1 MHz, 30 mVAC
I
DIODE
= 10
mA
V
DIODE
= 3.3 V
Parameter
Conditions
Min
80
24
Typ
100
30
15
6.0
0.1
1.0
Max
120
36
Units
W
pF
pF
V
mA
V
I
LOAD
= 10 mA
I
LOAD
=
−10
mA
(Note 2)
5.6
−1.5
±30
±15
6.8
−0.8
9.0
−0.4
V
ESD
kV
R
DYN
2.3
0.9
110
35
30
W
f
C
A
1GHz
A
800MHz−6GHz
MHz
dB
dB
1. T
A
= 25
°
C unless otherwise specified.
2. ESD applied to input and output pins with respect to GND, one at a time.
3. Attenuation / RF curves characterized by a network analyzer using microprobes.
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