TLV2316-Q1 10-MHz, Rail-to-Rail Input/Output, Low-Voltage, 1.8-V CMOS Operational Amplifier
| 参数名称 | 属性值 |
| Input common mode headroom (to negative supply)(Typ)(V) | -0.2 |
| Vos (offset voltage @ 25 C)(Max)(mV) | 3 |
| Offset drift(Typ)(uV/C) | 2 |
| Features | Cost Optimized,EMI Hardened |
| Input common mode headroom (to positive supply)(Typ)(V) | 0.2 |
| GBW(Typ)(MHz) | 10 |
| Slew rate(Typ)(V/us) | 6 |
| Output current(Typ)(mA) | 50 |
| Package Group | VSSOP|8 |
| Rating | Automotive |
| CMRR(Typ)(dB) | 90 |
| CMRR(Min)(dB) | 72 |
| Rail-to-rail | In,Out |
| Iq per channel(Max)(mA) | 575 |
| Architecture | CMOS |
| Output swing headroom (to positive supply)(Typ)(V) | -0.005 |
| Vn at 1 kHz(Typ)(nV/rtHz) | 12 |
| Total supply voltage(Min)(+5V=5, +/-5V=10) | 1.8 |
| Approx. price(US$) | 0.43 | 1ku |
| Total supply voltage(Max)(+5V=5, +/-5V=10) | 5.5 |
| Number of channels(#) | 2 |
| Iq per channel(Typ)(mA) | 0.4 |
| Operating temperature range(C) | -40 to 125 |
| Output swing headroom (to negative supply)(Typ)(V) | 0.005 |
| TLV2316-Q1 | TLV316QDBVRQ1 | TLV2316QDGKTQ1 | TLV316QDBVTQ1 | TLV2316QDGKRQ1 | TLV4316QPWRQ1 | TLV316-Q1 | TLV4316-Q1 | |
|---|---|---|---|---|---|---|---|---|
| 描述 | TLV2316-Q1 10-MHz, Rail-to-Rail Input/Output, Low-Voltage, 1.8-V CMOS Operational Amplifier | 10-MHz, Rail-to-Rail Input/Output, Low-Voltage, 1.8-V CMOS Operational Amplifier 5-SOT-23 -40 to 125 | 10-MHz, Rail-to-Rail Input/Output, Low-Voltage, 1.8-V CMOS Operational Amplifier 8-VSSOP -40 to 125 | 10-MHz, Rail-to-Rail Input/Output, Low-Voltage, 1.8-V CMOS Operational Amplifier 5-SOT-23 -40 to 125 | 10-MHz, Rail-to-Rail Input/Output, Low-Voltage, 1.8-V CMOS Operational Amplifier 8-VSSOP -40 to 125 | 10-MHz, Rail-to-Rail Input/Output, Low-Voltage, 1.8-V CMOS Operational Amplifier 14-TSSOP -40 to 125 | TLV316-Q1 10-MHz, Rail-to-Rail Input/Output, Low-Voltage, 1.8-V CMOS Operational Amplifier | TLV4316-Q1 10-MHz, Rail-to-Rail Input/Output, Low-Voltage, 1.8-V CMOS Operational Amplifier |
| Input common mode headroom (to negative supply)(Typ)(V) | -0.2 | -0.2 | - | -0.2 | - | -0.2 | -0.2 | -0.2 |
| Vos (offset voltage @ 25 C)(Max)(mV) | 3 | 3 | - | 3 | - | 3 | 3 | 3 |
| Offset drift(Typ)(uV/C) | 2 | 2 | - | 2 | - | 2 | 2 | 2 |
| Features | Cost Optimized,EMI Hardened | Cost Optimized,EMI Hardened | - | Cost Optimized,EMI Hardened | - | Cost Optimized,EMI Hardened | Cost Optimized,EMI Hardened | Cost Optimized,EMI Hardened |
| Input common mode headroom (to positive supply)(Typ)(V) | 0.2 | 0.2 | - | 0.2 | - | 0.2 | 0.2 | 0.2 |
| GBW(Typ)(MHz) | 10 | 10 | - | 10 | - | 10 | 10 | 10 |
| Slew rate(Typ)(V/us) | 6 | 6 | - | 6 | - | 6 | 6 | 6 |
| Output current(Typ)(mA) | 50 | 50 | - | 50 | - | 50 | 50 | 50 |
| Package Group | VSSOP|8 | SOT-23|5 | - | SOT-23|5 | - | TSSOP|14 | SOT-23|5 | TSSOP|14 |
| Rating | Automotive | Automotive | - | Automotive | - | Automotive | Automotive | Automotive |
| CMRR(Typ)(dB) | 90 | 90 | - | 90 | - | 90 | 90 | 90 |
| CMRR(Min)(dB) | 72 | 72 | - | 72 | - | 72 | 72 | 72 |
| Rail-to-rail | In,Out | In,Out | - | In,Out | - | In,Out | In,Out | In,Out |
| Iq per channel(Max)(mA) | 575 | 575 | - | 575 | - | 575 | 575 | 575 |
| Architecture | CMOS | CMOS | - | CMOS | - | CMOS | CMOS | CMOS |
| Output swing headroom (to positive supply)(Typ)(V) | -0.005 | -0.005 | - | -0.005 | - | -0.005 | -0.005 | -0.005 |
| Vn at 1 kHz(Typ)(nV/rtHz) | 12 | 12 | - | 12 | - | 12 | 12 | 12 |
| Total supply voltage(Min)(+5V=5, +/-5V=10) | 1.8 | 1.8 | - | 1.8 | - | 1.8 | 1.8 | 1.8 |
| Approx. price(US$) | 0.43 | 1ku | 0.28 | 1ku | - | 0.28 | 1ku | - | 0.64 | 1ku | 0.28 | 1ku | 0.64 | 1ku |
| Total supply voltage(Max)(+5V=5, +/-5V=10) | 5.5 | 5.5 | - | 5.5 | - | 5.5 | 5.5 | 5.5 |
| Number of channels(#) | 2 | 1 | - | 1 | - | 4 | 1 | 4 |
| Iq per channel(Typ)(mA) | 0.4 | 0.4 | - | 0.4 | - | 0.4 | 0.4 | 0.4 |
| Operating temperature range(C) | -40 to 125 | -40 to 125 | - | -40 to 125 | - | -40 to 125 | -40 to 125 | -40 to 125 |
| Output swing headroom (to negative supply)(Typ)(V) | 0.005 | 0.005 | - | 0.005 | - | 0.005 | 0.005 | 0.005 |
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