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CD54HCT30: 产品描述CD54HCT30 High Speed CMOS Logic 8-Input NAND Gate; 产品类别半导体逻辑; 文件大小1MB，共20页; 制造商Texas Instruments(德州仪器); 官网地址http://www.ti.com.cn/

敬请期待详细参数选型对比

CD54HCT30概述

CD54HCT30 High Speed CMOS Logic 8-Input NAND Gate

CD54HCT30规格参数

参数名称	属性值
Input type	Bipolar
IOL(Max)(mA)	4
Rating	Military
Output type	Push-Pull
IOH(Max)(mA)	-4
Operating temperature range(C)	-55 to 125
VCC(Max)(V)	5.5
Technology Family	HCT
VCC(Min)(V)	4.5
Package Group	CDIP\|14

CD54HCT30相似产品对比

	CD54HCT30	5962-8974601CA	8404001CA	CD54HC30F	CD54HC30F3A	CD54HCT30F3A	CD54HC30	CD74HC30	CD74HCT30
描述	CD54HCT30 High Speed CMOS Logic 8-Input NAND Gate	High Speed CMOS Logic 8-Input NAND Gate 14-CDIP -55 to 125	High Speed CMOS Logic 8-Input NAND Gate 14-CDIP -55 to 125	High Speed CMOS Logic 8-Input NAND Gate 14-CDIP -55 to 125	High Speed CMOS Logic 8-Input NAND Gate 14-CDIP -55 to 125	High Speed CMOS Logic 8-Input NAND Gate 14-CDIP -55 to 125	CD54HC30 High Speed CMOS Logic 8-Input NAND Gate	CD74HC30 High Speed CMOS Logic 8-Input NAND Gate	CD74HCT30 High Speed CMOS Logic 8-Input NAND Gate
Brand Name	-	Texas Instruments	Texas Instruments	Texas Instruments	Texas Instruments	Texas Instruments	-	-	-
零件包装代码	-	DIP	DIP	DIP	DIP	DIP	-	-	-
包装说明	-	DIP, DIP14,.3	DIP, DIP14,.3	DIP, DIP14,.3	DIP, DIP14,.3	DIP-14	-	-	-
针数	-	14	14	14	14	14	-	-	-
Reach Compliance Code	-	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	-	-	-
ECCN代码	-	EAR99	EAR99	EAR99	EAR99	EAR99	-	-	-
Factory Lead Time	-	1 week	16 weeks	6 weeks	16 weeks	6 weeks	-	-	-
系列	-	HCT	HC	HC/UH	HC/UH	HCT	-	-	-
JESD-30 代码	-	R-GDIP-T14	R-GDIP-T14	R-GDIP-T14	R-GDIP-T14	R-GDIP-T14	-	-	-
长度	-	19.56 mm	19.56 mm	19.56 mm	19.56 mm	19.56 mm	-	-	-
负载电容（CL）	-	50 pF	50 pF	50 pF	50 pF	50 pF	-	-	-
逻辑集成电路类型	-	NAND GATE	NAND GATE	NAND GATE	NAND GATE	NAND GATE	-	-	-
最大I（ol）	-	0.004 A	0.004 A	0.004 A	0.004 A	0.004 A	-	-	-
功能数量	-	1	1	1	1	1	-	-	-
输入次数	-	8	8	8	8	8	-	-	-
端子数量	-	14	14	14	14	14	-	-	-
最高工作温度	-	125 °C	125 °C	125 °C	125 °C	125 °C	-	-	-
最低工作温度	-	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-	-	-
封装主体材料	-	CERAMIC, GLASS-SEALED	CERAMIC, GLASS-SEALED	CERAMIC, GLASS-SEALED	CERAMIC, GLASS-SEALED	CERAMIC, GLASS-SEALED	-	-	-
封装代码	-	DIP	DIP	DIP	DIP	DIP	-	-	-
封装等效代码	-	DIP14,.3	DIP14,.3	DIP14,.3	DIP14,.3	DIP14,.3	-	-	-
封装形状	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	-	-
封装形式	-	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	-	-	-
包装方法	-	TUBE	TUBE	TUBE	TUBE	TUBE	-	-	-
峰值回流温度（摄氏度）	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	-	-
电源	-	5 V	2/6 V	2/6 V	2/6 V	5 V	-	-	-
最大电源电流（ICC）	-	0.04 mA	0.04 mA	0.04 mA	0.04 mA	0.04 mA	-	-	-
Prop。Delay @ Nom-Sup	-	42 ns	30 ns	39 ns	39 ns	42 ns	-	-	-
传播延迟（tpd）	-	42 ns	195 ns	195 ns	195 ns	42 ns	-	-	-
认证状态	-	Qualified	Qualified	Not Qualified	Not Qualified	Not Qualified	-	-	-
施密特触发器	-	NO	NO	NO	NO	NO	-	-	-
座面最大高度	-	5.08 mm	5.08 mm	5.08 mm	5.08 mm	5.08 mm	-	-	-
最大供电电压 (Vsup)	-	5.5 V	6 V	6 V	6 V	5.5 V	-	-	-
最小供电电压 (Vsup)	-	4.5 V	2 V	2 V	2 V	4.5 V	-	-	-
标称供电电压 (Vsup)	-	5 V	4.5 V	4.5 V	4.5 V	5 V	-	-	-
表面贴装	-	NO	NO	NO	NO	NO	-	-	-
技术	-	CMOS	CMOS	CMOS	CMOS	CMOS	-	-	-
温度等级	-	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	-	-	-
端子形式	-	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	-	-	-
端子节距	-	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	-	-	-
端子位置	-	DUAL	DUAL	DUAL	DUAL	DUAL	-	-	-
处于峰值回流温度下的最长时间	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	-	-
宽度	-	6.67 mm	7.62 mm	7.62 mm	7.62 mm	6.67 mm	-	-	-

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