MA4AGBLP912
AlGaAs
Beamlead PIN Diode
Features
♦
♦
♦
♦
♦
♦
♦
V4
Low Series Resistance
Low Capacitance
5 Nanosecond Switching Speed
Can be Driven by a Buffered +5V TTL
Silicon Nitride Passivation
Polyimide Scratch Protection
RoHS Compliant
Topside
Description
M/A-COM Technology Solutions MA4AGBLP912 is an
Aluminum-Gallium-Arsenide anode enhanced, beam
lead PIN diode. AlGaAs anodes, which utilize M/A-COM
Tech’s patented hetero-junction technology, produce
less diode “On” resistance than conventional GaAs or
silicon devices. This device is fabricated in a OMCVD
system using a process optimized for high device
uniformity and extremely low parasitics. The result is a
diode with low series resistance, 4Ω, low capacitance,
28fF, and an extremely fast switching speed of 5nS. It is
fully passivated with silicon nitride and has an additional
polymer coating for scratch protection. The protective
coating prevents damage to the junction and the anode
air bridges during handling and assembly.
Bottom
Absolute Maximum Ratings @ T
AMB
= 25°C
(unless otherwise specified)
Parameter
Reverse Voltage
Operating Temperature
Storage Temperature
Junction Temperature
Absolute Maximum
-50V
-65°C to +125°C
-65°C to +150°C
+175°C
Applications
The ultra low capacitance of the MA4AGBLP912
device makes it ideally suited for use up to 40GHz when
used in a shunt configuration. The low RC product and
low profile of the beamlead PIN diode allows for use in
microwave switch designs, where low insertion loss and
high isolation are required. The operating bias
conditions of +10mA for the low loss state, and 0V, for
the isolation state permits the use of a simple +5V TTL
gate driver. AlGaAs, beamlead diodes, can be used in
switching arrays on radar systems, high speed ECM
circuits, optical switching networks, instrumentation, and
other wideband multi-throw switch assemblies
.
Forward DC Current
C.W. Incident Power
Mounting Temperature
40mA
+23dBm
+235°C for 10 seconds
1
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
development. Performance is based on target specifications, simulated results, and/or prototype
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
measurements. Commitment to develop is not guaranteed.
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under develop-
Visit www.macom.com for additional data sheets and product information.
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
volume is not guaranteed.
information contained herein without notice.
MA4AGBLP912
AlGaAs
Beamlead PIN Diode
Electrical Specifications at T
AMB
= 25°C
Test Conditions
Total Capacitance @ –5V/1 MHz
Forward Resistance @ +20mA/1 GHz
Forward Voltage at +10mA
Leakage Current at –40 V
Minority Carrier Lifetime
Parameters
Ct
Rs
Vf
Ir
TL
Units
fF
Ohms
Volts
nA
nS
Min
–
–
1.2
–
–
Typical
26
4
1.36
50
5
Max.
30
4.9
1.5
300
10
V4
INCHES
DIM
A
B
C
D
E
2
MM
MIN.
0.2286
0.1245
0.0940
0.1245
0.0508
0.5537
MAX.
0.3302
0.2261
0.1448
0.2261
0.1524
0.70612
MIN.
0.009
0.0049
0.0037
0.0049
0.002
0.0218
MAX.
0.013
0.0089
0.0057
0.0089
0.006
0.0278
F
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
development. Performance is based on target specifications, simulated results, and/or prototype
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
measurements. Commitment to develop is not guaranteed.
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under develop-
Visit www.macom.com for additional data sheets and product information.
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
volume is not guaranteed.
information contained herein without notice.
MA4AGBLP912
AlGaAs
Beamlead PIN Diode
Diode Model
Rs
V4
Ls = 0.5
Ct
MA4AGBLP912 SPICE Model
wBv= 50 V
μ
e-
= 8600 cm^2/V-sec wPmax= 100 mW
Ffe= 1.0
Wi= 3.0 um
Rr= 10 K Ohms
Cjmin= 0.020 pF
Tau= 10 nsec
Rs(I)= Rc + Rj(I) = 0.10 Ohm + Rj(I)
Cj0= 0.022 pF
Vj= 1.35 V
M= 0.5
Fc= 0.5
Imax= 0.04 A
Kf= 0.0
Af=1.0
3
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
development. Performance is based on target specifications, simulated results, and/or prototype
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
measurements. Commitment to develop is not guaranteed.
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under develop-
Visit www.macom.com for additional data sheets and product information.
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
volume is not guaranteed.
Is=1.0E-14 A
Vi=0.0 V
information contained herein without notice.
MA4AGBLP912
AlGaAs
Beamlead PIN Diode
Handling and Assembly Procedures
The following precautions should be observed to avoid damaging these devices.
Cleanliness
These devices should be handled in a clean environment.
Static Sensitivity
Aluminum Gallium Arsenide PIN diodes are Class 0, HBM, ESD sensitive and can be damaged by
static electricity. Proper ESD techniques should be used when handling these devices.
General Handling
These devices have a polymer layer which provides scratch protection for the junction area and the
anode air bridge. Beam lead devices must, however, be handled with extreme care since the leads
may easily be distorted or broken by the normal pressures exerted when handled with tweezers. A
vacuum pencil with a #27 tip is recommended for picking and placing.
Attachment
These devices were designed to be inserted onto hard or soft substrates. Recommended methods
of attachment include thermo-compression bonding, parallel-gap welding and electrically conductive
silver epoxy.
V4
Ordering Information
Part Number
MA4AGBLP912
Packaging
Gel Pak
4
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
development. Performance is based on target specifications, simulated results, and/or prototype
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
measurements. Commitment to develop is not guaranteed.
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under develop-
Visit www.macom.com for additional data sheets and product information.
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
volume is not guaranteed.
information contained herein without notice.
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