Ordering number : ENN7538
2SC5899
NPN Triple Diffused Planar Silicon Transistor
2SC5899
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features
•
•
•
•
Package Dimensions
unit : mm
2174A
[2SC5899]
16.0
3.4
5.6
3.1
High speed.
High breakdown voltage(VCBO=1700V).
High reliability(Adoption of HVP process).
Adoption of MBIT process.
5.0
21.0
4.0
22.0
8.0
2.8
2.0
20.4
0.7
0.9
1
2
5.45
3
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25°C
Conditions
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PMLH
Ratings
1700
800
5
15
35
3.0
95
150
--55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
5.45
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Collector-to-Emitter Breakdown Voltage
Emitter Cutoff Current
Symbol
ICBO
ICES
V(BR)CEO
IEBO
Conditions
VCB=800V, IE=0
VCE=1700V, RBE=0
IC=10mA, RBE=∞
VEB=4V, IC=0
800
1.0
Ratings
min
typ
max
10
1.0
Unit
µA
mA
V
mA
3.5
0.8
2.1
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
31504 TS IM TA-100536 No.7538-1/4
2SC5899
Continued from preceding page.
Parameter
DC Current Gain
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Storage Time
Fall Time
Symbol
hFE1
hFE2
VCE(sat)
VBE(sat)
tstg
tf
VCE=5V, IC=1A
VCE=5V, IC=11A
IC=10A, IB=2.5A
IC=10A, IB=2.5A
IC=7A, IB1=0.9A, IB2=--3.6A
IC=7A, IB1=0.9A, IB2=--3.6A
Conditions
Ratings
min
15
4
7
3
1.5
3.0
0.2
V
V
µs
µs
typ
max
Unit
Switching Time Test Circuit
PW=20µs
D.C.≤1%
INPUT
IB1
OUTPUT
IB2
VR
50Ω
+
100µF
VBE= --5V
+
470µF
VCC=200V
RB
RL=28.6Ω
12
11
10
IC -- VCE
2.0A
A
1.8A
1.6A
1.4
1.2A
1.0A
0.8A
0.6A
Collector Current, IC -- A
16
IC -- VBE
VCE=5V
14
12
10
8
Collector Current, IC -- A
9
8
7
6
5
4
3
2
20
°
0
0.2
0.4
0.6
0.4A
0.2A
0.1A
C
25
°
C
0.8
4
2
0
1
0
0
1
2
3
4
5
6
7
8
IB=0
9
10
Ta=
1
6
--40
°
C
1.0
1.2
IT06264
Collector-to-Emitter Voltage, VCE -- V
100
7
5
IT06263
10
7
5
hFE -- IC
Base-to-Emitter Voltage, VBE -- V
VCE(sat) -- IC
DC Current Gain, hFE
3
2
25
°
C
10
7
5
3
2
--40
°
C
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0.1
2
Ta= --40
°C
120°C
25°C
1.0
0.1
2
3
5
7 1.0
2
3
5
7
10
2
3
3
5
7 1.0
2
3
5
7
120
2
3
IT06266
Ta=120
°C
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
3
2
Collector Current, IC -- A
IT06265
Collector Current, IC -- A
Ta=
--40
°
10
25
°
C
°
C
VCE=5V
IC / IB=5
C
No.7538-2/4
2SC5899
10
7
SW Time -- IC
Switching Time, SW Time --
µs
VCC=200V
IC / IB=8
IB2 / IB1=4
R load
10
7
5
3
2
SW Time -- IB2
tst
g
VCC=200V
IC=7A
IB1=0.9A
R load
Switching Time, SW Time --
µs
5
3
2
tstg
1.0
7
5
3
2
1.0
7
5
3
2
tf
tf
0.1
0.1
2
3
5
7 1.0
2
3
5
7
10
2
3
0.1
0.1
2
3
5
7
1.0
2
3
5
Collector Current, IC -- A
100
7
5
3
2
IT06267
100
7
5
3
Forward Bias A S O
ICP=35A
IC=15A
Base Current, IB2 -- A
10
IT06268
7
Reverse Bias A S O
L=500µH
IB2= --3A
Tc=25°C
Single pulse
0
=1
PT
Collector Current, IC -- A
Collector Current, IC -- A
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
P
C =9
5W
DC
ms
ion
10
at
er
30
s
0
µ
0
µ
s
2
10
7
5
3
2
1.0
7
5
3
2
s
1m
op
0.01
1.0
Tc=25°C
Single pulse
2
3
5 7 10
2
3
5 7 100
2
3
Collector-to-Emitter Voltage, VCE -- V
3.5
5 7 1000
IT06269
0.1
100
2
3
5
7
1000
2
3
PC -- Ta
Collector-to-Emitter Voltage, VCE -- V
100
95
90
IT06270
PC -- Tc
3.0
Collector Dissipation, PC -- W
Collector Dissipation, PC -- W
100
120
140
160
80
70
60
50
40
30
20
10
2.5
No
2.0
he
at
s
in
k
1.5
1.0
0.5
0
0
20
40
60
80
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT06271
Case Temperature, Tc --
°C
IT06272
No.7538-3/4
2SC5899
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of March, 2004. Specifications and information herein are subject
to change without notice.
PS No.7538-4/4
FPGA/CPLD
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