Agilent MGA-665P8
GaAs Enhancement-Mode
PHEMT 0.5 – 6 GHz Low Noise
Amplifier
Data Sheet
Surface Mount, 2.0 x 2.0 x 0.75 mm 8-lead LPCC
Description
Agilent’s MGA-665P8 is an
economical, easy-to-use GaAs
MMIC Low Noise Amplifier (LNA)
with a unique active-low power-
down function. The LNA has low
noise figure and high gain
achieved through the use of
Agilent Technologies’ proprietary
GaAs Enhancement-mode PHEMT
process. It is housed in a
miniature 2.0 x 2.0 x 0.75 mm
8-pin Leadless-Plastic-Chip-
Carrier (LPCC) package. The
compact footprint and low profile
coupled with low noise, high gain
and high linearity makes the
MGA-665P8 an ideal choice as an
LNA for broadband general-
purpose applications. Its excellent
broadband isolation also makes it
a good buffer amplifier.
The output of the MGA-665P8
provides a very good broadband
match to 50
Ω.
Its input requires a
simple external LC network to
provide a low noise figure and
good input return loss. Power
supply voltage is applied to both
the output terminal and a
separate V
D
terminal. A simple
external bias insertion circuit
consisting of a shunt inductor and
a series dc block capacitor is
sufficient to apply power supply
voltage to the output of the MGA-
665P8. The MGA-665P8 provides
typical device performance of
1.45 dB noise figure, 16 dB gain
and an OIP3 of +18.1 dBm at
5.25 GHz, at a bias point of 3 V
and 20.5 mA.
Pin Configuration, Top View
GND PADDLE
Features
• Active-low power-down function
• Single +3 V supply operation
• Low noise and high gain MMIC
• Output 50
Ω
match
• Excellent isolation
• Minimal match and external
biasing components
• Housed in miniature 2 x 2 x 0.75 mm
LPCC package
• Pb-free & MSL-1 package
Specifications
• 0.5 to 6 GHz operation
• At 3 V, 20.5 mA, 2.4 GHz:
NF = 1.2 dB
Gain = 18.4 dB
OIP3 = 19 dBm
• At 3 V, 20.5 mA, 5.25 GHz:
NF = 1.45 dB
Gain = 16 dB
OIP3 = 18.1 dBm
1: GND
8: UNUSED
POWER DOWN FUNCITON:
LOGIC LOW (0-1 V): POWER ON
LOGIC HIGH (2-3 V): POWER OFF
NOTES:
1. PINS 1, 3, AND PADDLE NEED TO BE
PROPERLY GROUNDED TO OBTAIN
SPECIFIED PERFORMANCE.
2. SUPPLY VOLTAGE, V
D
, NEEDS TO BE
APPLIED AT PINS 6 & 7. SUPPLY AT
PIN 7 TO BE APPLIED USING A BIAS
TEE OR EQUIVALENT.
2: RF
IN
7: RF
OUT
& V
D
3: GND
6: V
D
4: UNUSED
5: POWERDOWN
Attention:
Observe precautions for handling electrostatic sensitive devices.
ESD Machine Model = 40 V
ESD Human Body Model = 150 V
Refer to Agilent Application Note A004R:
Electrostatic Discharge, Damage and Control.
1. Absolute Maximum Ratings
[1]
Symbol
V
D
V
C
I
D
Pdiss
Pin max.
T
CH
T
STG
q
ch_b
Parameter
Supply Voltage
[2]
Control Voltage
[2]
Drain Current
[2]
Total Power Dissipation
[3]
RF Input Power
Channel Temperature
Storage Temperature
Thermal Resistance
[4]
Units
V
V
mA
W
dBm
°C
°C
°C/W
Absolute Maximum
6
6
45.6
0.27
13
150
-65 to 150
44.76
Notes:
1. Operation of this device above any one of these parameters may cause permanent damage.
2. DC quiescent conditions.
3. Board (package belly) temperature T
B
is 25°C. Derate 29 mW/°C for T
B
> 133°C.
4. Channel-to-board thermal resistance measured using 150°C Liquid Crystal Measurement method.
2. Product Consistency Distribution Charts at 5.25 GHz, 3.0 V, Id = 20.5 mA
[5,6]
160
Stdev = 0.067
180
Stdev = 0.23
150
120
FREQUENCY
FREQUENCY
120
90
60
30
–3 Std
80
+3 Std
40
0
1.2
1.3
1.4
1.5
1.6
1.7
NF (dB)
0
17
17.5
18
OIP3 (dB)
18.5
19
Figure 1. NF; nominal = 1.45.
Figure 2. OIP3; LSL = 17.8, nominal = 18.2.
180
Stdev = 0.20
150
400
Stdev = 0.11
300
FREQUENCY
90
60
30
0
15
–3 Std
+3 Std
FREQUENCY
120
200
–3 Std
+3 Std
100
0
16
GAIN (dB)
17
11
11.5
P1dB (dB)
12
Figure 3. Gain (dB); nominal = 16 dB.
Figure 4. P1dB; LSL = 11, nominal = 11.4.
Notes:
5. Distribution data sample size is 500 samples taken from 3 different wafers lots. Future wafers allocated to this product may have nominal values
anywhere between the upper and lower limits.
6. Measurements are made on production test board described in Figure 5, which represents a trade-off between optimal OIP3, P1dB, Gain and NF.
Circuit losses have been de-embedded from actual measurements
2
3. MGA-665P8 Electrical Specifications
T
A
= 25°C, DC Bias for RF Parameter is V
D
= 3.0 V (unless otherwise specified)
Symbol
V
C
I
D
I
D
(Off)
G
test[7]
NF
test[7]
OIP3
test[7,8]
P1dB
test[7]
Psat
test[7]
IRL
test[7]
ORL
test[7]
G
a[8]
Parameter and Test Condition
Control Voltage
Device Current
Off current
Gain
Noise Figure
Output Third Order Intercept Point
Output Power at 1dB Gain Compression
Output Power at Saturation
Input return Loss
Output Return Loss
Associated Gain at NF
o
V
C
= 3 V
Freq = 5.25 GHz
Freq = 5.25 GHz
Freq = 5.25 GHz
Freq = 5.25 GHz
Freq = 5.25 GHz
Freq = 5.25 GHz
Freq = 5.25 GHz
Freq = 0.9 GHz
Freq = 2.4 GHz
Freq = 3.5 GHz
Freq = 5.25 GHz
Freq = 5.8 GHz
Freq = 0.9 GHz
Freq = 2.4 GHz
Freq = 3.5 GHz
Freq = 5.25 GHz
Freq = 5.8 GHz
Freq = 0.9 GHz
Freq = 2.4 GHz
Freq = 3.5 GHz
Freq = 5.25 GHz
Freq = 5.8 GHz
Freq = 0.9 GHz
Freq = 2.4 GHz
Freq = 3.5 GHz
Freq = 5.25 GHz
Freq = 5.8 GHz
Units
V
mA
µA
dB
dB
dBm
dBm
dBm
dB
dB
dB
Min.
-
18.2
-
14.5
-
16.5
-
-
-
-
-
Typ.
ON: 0–1 V
Off: 2–3 V
20.5
180
16
1.45
18.2
11.4
15
18
20
22.58
18.42
16.99
16.00
17.16
1.30
1.18
1.36
1.45
1.44
21.26
19.02
17.30
18.10
17.89
8.62
7.41
6.89
7.80
8.32
Max.
-
23.8
220
17.5
1.9
-
-
-
-
-
-
NF
o[8]
Optimum Noise Figure
(Tuned for Lowest Noise Figure)
dB
-
-
OIP3
[8,9]
Output Third Order Intercept Point at NFo
dBm
-
-
P
1dB[8]
Output Power at 1 dB Gain Compression
Point at NF
o
dBm
-
-
Notes:
7. Measurements obtained using production test board described in Figure 5, which represents a trade-off between optimal OIP3, P1dB, Gain and NF.
Circuit losses have been de-embedded from actual measurements.
8. Measurements obtained using test fixture with input tuned for low noise figure. Gain, OIP3 and P1dB were measured at this tuned condition. Tuner
and fixture losses have been de-embedded from actual measurements. The supply is connected to ground via a bypass capacitor. The OIP3 is
approximately 3 dB lower without this bypass capacitor.
9. OIP3 test condition: Pin = -20 dBm,
Df
= f
1
– f
2
= 10 MHz.
3
8.2 nH
1000 pF
VD = 3 V
9.1
Ω
2.2 nH
3 pF
0.6 pF
RFIN
1 nH
RF0UT
0.2 pF
Figure 5: Simplified schematic of 5.25 GHz production test board, which represents a tradeoff
between Gain, NF, OIP3, P1dB and return loss measurements. Circuit losses have been de-
embedded from actual measurements.
4. MGA-665P8 DC Performance Curves (at 25°C unless specified otherwise)
40
25
2.7 V
3.0 V
3.3 V
35
20
30
CURRENT (mA)
CURRENT (mA)
-40°C
25°C
85°C
25
20
15
15
10
5
10
5
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
0
0.5
1.0
1.5
2.0
2.5
3.0
VOLTAGE (V)
CONTROL VOLTAGE (V)
Figure 6. Current vs. supply voltage.
Figure 7. Current vs. control voltage.
4
5. MGA-665P8 Performance Curves Tuned For NFmin at V
D
= 3.0 V, V
C
= 0 V, I
D
= 20.5 mA
[10]
(at 25°C unless specified otherwise)
1.8
1.6
24
22
20
22
20
18
NOISE FIGURE (dB)
1.4
GAIN (dB)
1.2
1.0
0.8
0.6
-40°C
25°C
85°C
18
16
14
12
-40°C
25°C
85°C
OIP3 (dB)
16
14
12
-40°C
25°C
85°C
0.4
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
FREQUENCY (GHz)
10
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
FREQUENCY (GHz)
10
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
FREQUENCY (GHz)
Figure 8. Minimum noise figure vs. frequency
and temperature.
Figure 9. Associated gain measured at NFmin
tuned condition vs. frequency and
temperature.
1.8
1.6
Figure 10. Output third order intercept point
measured at NFmin tuned condition vs.
frequency and temperature.
24
22
20
10
9
NOISE FIGURE (dB)
8
1.4
1.2
1.0
0.8
0.6
0.4
0.5
1.5
2.5
3.5
2.7 V
3.0 V
3.3 V
P1dB (dB)
7
6
5
4
-40°C
25°C
85°C
GAIN (dB)
18
16
14
12
2.7 V
3.0 V
3.3 V
3
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
FREQUENCY (GHz)
4.5
5.5
10
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 11. Output power for 1 dB gain
compression measured at NFmin tuned
condition vs. frequency and temperature.
Figure 12. Minimum noise figure vs.
frequency and voltage.
Figure 13. Associated gain measured at
NFmin tuned condition vs. frequency and
voltage.
22
20
18
10
9
8
P1dB (dB)
2.7 V
3.0 V
3.3 V
OIP3 (dB)
7
6
5
4
2.7 V
3.0 V
3.3 V
16
14
12
10
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
FREQUENCY (GHz)
3
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
FREQUENCY (GHz)
Figure 14. Output third order intercept point
measured at NFmin tuned condition vs.
frequency and voltage.
Figure 15. Output power for 1 dB gain
compression measured at NFmin tuned
condition vs. frequency and voltage.
Note:
10. Measurements obtained using test fixture with input tuned for low noise figure with a double stub tuner. Gain, OIP3 and P1dB were measured at
this tuned condition. Tuner and fixture losses have been de-embedded from actual measurements. The supply is connected to ground via a bypass
capacitor. The OIP3 is approximately 3dB lower without this bypass capacitor.
5
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