Standard SRAM, 32X8, CMOS, CDIP18
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 包装说明 | DIP, DIP18,.3 |
| Reach Compliance Code | unknown |
| JESD-30 代码 | R-XDIP-T18 |
| JESD-609代码 | e0 |
| 内存集成电路类型 | STANDARD SRAM |
| 内存宽度 | 8 |
| 端子数量 | 18 |
| 字数 | 32 words |
| 字数代码 | 32 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 组织 | 32X8 |
| 输出特性 | 3-STATE |
| 封装主体材料 | CERAMIC |
| 封装代码 | DIP |
| 封装等效代码 | DIP18,.3 |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 并行/串行 | PARALLEL |
| 电源 | 5 V |
| 认证状态 | Not Qualified |
| 筛选级别 | MIL-STD-883 Class B (Modified) |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| Base Number Matches | 1 |
| HB1824CY | HB1824CD | HC1824D | HC1824Y | HI1824CP | HMMP1824CD | |
|---|---|---|---|---|---|---|
| 描述 | Standard SRAM, 32X8, CMOS, CDIP18 | Standard SRAM, 32X8, CMOS, CDIP18 | Standard SRAM, 32X8, CMOS, CDIP18 | Standard SRAM, 32X8, CMOS, CDIP18 | Standard SRAM, 32X8, CMOS, PDIP18 | Standard SRAM, 32X8, CMOS, CDIP18 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 包装说明 | DIP, DIP18,.3 | DIP, DIP18,.3 | DIP, DIP18,.3 | DIP, DIP18,.3 | DIP, DIP18,.3 | DIP, DIP18,.3 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknow |
| JESD-30 代码 | R-XDIP-T18 | R-XDIP-T18 | R-XDIP-T18 | R-XDIP-T18 | R-PDIP-T18 | R-XDIP-T18 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 |
| 内存集成电路类型 | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
| 内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 |
| 端子数量 | 18 | 18 | 18 | 18 | 18 | 18 |
| 字数 | 32 words | 32 words | 32 words | 32 words | 32 words | 32 words |
| 字数代码 | 32 | 32 | 32 | 32 | 32 | 32 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 85 °C | 125 °C |
| 最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | -40 °C | -55 °C |
| 组织 | 32X8 | 32X8 | 32X8 | 32X8 | 32X8 | 32X8 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | CERAMIC | CERAMIC | CERAMIC | CERAMIC | PLASTIC/EPOXY | CERAMIC |
| 封装代码 | DIP | DIP | DIP | DIP | DIP | DIP |
| 封装等效代码 | DIP18,.3 | DIP18,.3 | DIP18,.3 | DIP18,.3 | DIP18,.3 | DIP18,.3 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 电源 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | NO | NO | NO | NO | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | MILITARY | MILITARY | MILITARY | MILITARY | INDUSTRIAL | MILITARY |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子节距 | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | - | Not Qualified |
| Base Number Matches | 1 | 1 | 1 | 1 | - | - |
| 厂商名称 | - | Hughes Microelectronics | Hughes Microelectronics | Hughes Microelectronics | Hughes Microelectronics | Hughes Microelectronics |
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