Power Transistors
2SA0900
(2SA900)
Silicon PNP epitaxial planar type
Unit: mm
For low-frequency Power amplification
Complementary to 2SC1868
■
Features
•
Low collector-emitter saturation voltage V
CE(sat)
•
TO-126B package which requires no insulation plate for installa-
tion to the heat sink
φ
3.16
±0.1
8.0
+0.5
–0.1
3.2
±0.2
3.8
±0.3
11.0
±0.5
1.9
±0.1
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
−20
−18
−5
−1
−2
1.2
150
−55
to
+150
Unit
V
V
V
A
A
W
°C
°C
1
2
0.75
±0.1
4.6
±0.2
0.5
±0.1
0.5
±0.1
2.3
±0.2
3
1.76
±0.1
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE1 *
h
FE2
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
I
C
=
−10 µA,
I
E
= 0
I
C
=
−1
mA, I
B
= 0
I
E
=
−10 µA,
I
C
= 0
V
CB
= −10
V, I
E
=
0
V
CE
= −18
V, I
B
=
0
V
CE
= −2
V, I
C
= −500
mA
V
CE
= −2
V, I
C
= −1.5
A
I
C
= −1
A, I
B
= −50
mA
I
C
= −500
mA, I
B
= −50
mA
V
CB
= −6
V, I
E
=
50 mA, f
=
200 MHz
V
CB
=
−6
V, I
E
= 0, f = 1 MHz
200
40
130
50
−
0.5
−1.2
V
V
MHz
pF
Min
−20
−18
−5
−1
−10
280
Typ
Max
Unit
V
V
V
µA
µA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE1
R
130 to 210
S
180 to 280
Note) The part numbers in the parenthesis show conventional part number.
Publication date: April 2003
SJD00004BED
16.0
±1.0
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
3.05
±0.1
1
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
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tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
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Consult our sales staff in advance for information on the following applications:
•
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
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•
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
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the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
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on the systems such as redundant design, arresting the spread of fire or preventing glitch are
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products.
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permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL
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