FLL410IK-4C
L-Band High Power GaAs FET
FEATURES
・High
Output Power: Pout=46.0dBm(Typ.)
・High
Gain: GL=11.5dB(Typ.)
・High
PAE:
ηadd=44%(Typ.)
・Broad
Band: 3.4~3.7GHz
・Hermetically
Sealed Package
DESCRIPTION
The FLL410IK-4C is a partially matched 40 Watt GaAs FET that is
designed for use in 3.4 – 3.7 GHz band amplifiers. This new product
is uniquely suited for use in WLL applications as it offers excellent
linearity, high efficiency, high gain, long term reliability and ease of use.
Eudyna
stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25
o
C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
V
DS
V
GS
PT
T
stg
T
ch
Rating
15
-5
107.0
-65 to +175
175
o
Unit
V
V
W
C
C
o
RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25
o
C)
Item
DC Input Voltage
Gate Current
Gate Current
Operating Channel Temperature
Symbol
V
DS
I
GF
I
GR
Tch
R
G
=5
Ω
R
G
=5
Ω
Condition
Limit
≤12
≤117
≥-23
≤145
Unit
V
mA
mA
o
C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
o
C)
Item
Drain Current
Pinch-off Voltage
Gate-Source Breakdown Voltage
Symbol
I
DSS
V
p
V
GSO
P
OUT
G
L
I
dsr
η
add
R
th
Test Conditions
V
DS
=5V , V
GS
=0V
V
DS
=5V , I
DS
=100mA
I
GS
=-1.0mA
V
DS
=12V
f=3.6 GHz
I
DS
=3A
Pin=36.0dBm
Channel to Case
Min.
-
-0.1
-5.0
45.0
10.5
-
-
-
Limit
Typ.
4.0
-0.3
-
46.0
11.5
6.7
44
1.0
Max.
-
-0.5
-
-
-
8.7
-
1.4
Unit
A
V
V
dBm
dB
A
%
o
Output Power
Linear Gain *
1
Drain Current
Power-added Efficiency
Thermal Resistance
C/W
*１：GL is measured at Pin=22.0dBm
ESD
Class
Ⅲ
2000V ~
CASE STYLE: IK
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k
Ω
)
Edition 1.1
Oct 2003
1
FLL410IK-4C
L-Band High Power GaAs FET
OUTPUT POWER vs. INPUT POWER
OUTPUT POWER , POWER ADDED EFFICIENCY
vs. TOTAL INPUT POWER
VDS=12V, IDS(DC)=3A, f=3.6GHz
Pin=38dBm
Pin=34dBm
48
46
Output Power [dBm]
44
42
40
38
36
34
32
3.3
3.4
VDS=12V, IDS(DC)=3A
48
46
Output Power [dBm]
44
42
40
38
36
34
32
21 23 25 27 29 31 33 35 37 39
Input Power [dBm]
P.A.E
Pout
80
70
60
50
40
30
20
10
0
Power Added Efficiency [%]
Pin=30dBm
Pin=26dBm
Pin=22dBm
3.5
3.6
3.7
3.8
Frequency [GHz]
IMD vs. TOTAL OUTPUT POWER
-20
-24
-28
-32
-36
-40
-44
-48
-52
-56
-60
VDS=12V, f=3.6GHz,
∆
f=5MHz
IM3
IM5
IMD [dBc]
2A
3A
2A
5A
3A
5A
24 26 28 30 32 34 36 38 40 42 44
Total Output Power [dBm]
2
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