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CAT28F010GI-90

产品描述Flash, 128KX8, 90ns, PQCC32, LEAD AND HALOGEN FREE, PLASTIC, LCC-32
产品类别存储    存储   
文件大小380KB,共16页
制造商Catalyst
官网地址http://www.catalyst-semiconductor.com/
标准
下载文档 详细参数 选型对比 全文预览

CAT28F010GI-90概述

Flash, 128KX8, 90ns, PQCC32, LEAD AND HALOGEN FREE, PLASTIC, LCC-32

CAT28F010GI-90规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称Catalyst
零件包装代码QFJ
包装说明QCCJ, LDCC32,.5X.6
针数32
Reach Compliance Codeunknown
ECCN代码EAR99
最长访问时间90 ns
命令用户界面YES
数据轮询NO
耐久性100000 Write/Erase Cycles
JESD-30 代码R-PQCC-J32
JESD-609代码e3
长度13.97 mm
内存密度1048576 bit
内存集成电路类型FLASH
内存宽度8
湿度敏感等级3
功能数量1
端子数量32
字数131072 words
字数代码128000
工作模式ASYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织128KX8
封装主体材料PLASTIC/EPOXY
封装代码QCCJ
封装等效代码LDCC32,.5X.6
封装形状RECTANGULAR
封装形式CHIP CARRIER
并行/串行PARALLEL
峰值回流温度(摄氏度)260
电源5 V
编程电压12 V
认证状态Not Qualified
座面最大高度3.55 mm
最大待机电流0.0001 A
最大压摆率0.03 mA
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)4.5 V
标称供电电压 (Vsup)5 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层MATTE TIN
端子形式J BEND
端子节距1.27 mm
端子位置QUAD
处于峰值回流温度下的最长时间40
切换位NO
类型NOR TYPE
宽度11.43 mm
Base Number Matches1

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CAT28F010
Licensed Intel
1 Megabit CMOS Flash Memory
second source
FEATURES
s
Fast read access time: 90/120 ns
s
Low power CMOS dissipation:
s
Commercial, industrial and automotive
temperature ranges
s
On-chip address and data latches
s
JEDEC standard pinouts:
–Active: 30 mA max (CMOS/TTL levels)
–Standby: 1 mA max (TTL levels)
–Standby: 100
µ
A max (CMOS levels)
s
High speed programming:
–10
µ
s per byte
–2 Sec Typ Chip Program
–32-pin DIP
–32-pin PLCC
–32-pin TSOP (8 x 20)
s
100,000 program/erase cycles
s
10 year data retention
s
Electronic signature
s
0.5 seconds typical chip-erase
s
12.0V
±
5% programming and erase voltage
s
Stop timer for program/erase
DESCRIPTION
The CAT28F010 is a high speed 128K x 8-bit electrically
erasable and reprogrammable Flash memory ideally
suited for applications requiring in-system or after-sale
code updates. Electrical erasure of the full memory
contents is achieved typically within 0.5 second.
It is pin and Read timing compatible with standard
EPROM and EEPROM devices. Programming and
Erase are performed through an operation and verify
algorithm. The instructions are input via the I/O bus,
using a two write cycle scheme. Address and Data are
latched to free the I/O bus and address bus during the
write operation.
The CAT28F010 is manufactured using Catalyst’s
advanced CMOS floating gate technology. It is designed
to endure 100,000 program/erase cycles and has a data
retention of 10 years. The device is available in JEDEC
approved 32-pin plastic DIP, 32-pin PLCC or 32-pin
TSOP packages.
I/O0–I/O7
BLOCK DIAGRAM
I/O BUFFERS
ERASE VOLTAGE
SWITCH
WE
COMMAND
REGISTER
PROGRAM VOLTAGE
SWITCH
CE, OE LOGIC
DATA
LATCH
SENSE
AMP
CE
OE
ADDRESS LATCH
Y-GATING
Y-DECODER
1,048,576 BIT
MEMORY
ARRAY
A0–A16
X-DECODER
VOLTAGE VERIFY
SWITCH
© 2009 SCILLC. All rights reserved.
Characteristics subject to change without notice
1
Doc. No. MD-1019, Rev. G

CAT28F010GI-90相似产品对比

CAT28F010GI-90 CAT28F010HRI-90 CAT28F010GI-12 CAT28F010LI-12 CAT28F010HI-90 CAT28F010LI-90 CAT28F010HRI-12
描述 Flash, 128KX8, 90ns, PQCC32, LEAD AND HALOGEN FREE, PLASTIC, LCC-32 Flash, 128KX8, 90ns, PDSO32, 8 X 20 MM, LEAD AND HALOGEN FREE, REVERSE, TSOP-32 Flash, 128KX8, 120ns, PQCC32, LEAD AND HALOGEN FREE, PLASTIC, LCC-32 Flash, 128KX8, 120ns, PDIP32, LEAD AND HALOGEN FREE, PLASTIC, DIP-32 Flash, 128KX8, 90ns, PDSO32, 8 X 20 MM, LEAD AND HALOGEN FREE, TSOP-32 Flash, 128KX8, 90ns, PDIP32, LEAD AND HALOGEN FREE, PLASTIC, DIP-32 Flash, 128KX8, 120ns, PDSO32, 8 X 20 MM, LEAD AND HALOGEN FREE, REVERSE, TSOP-32
是否Rohs认证 符合 符合 符合 符合 符合 符合 符合
零件包装代码 QFJ TSOP QFJ DIP TSOP DIP TSOP
包装说明 QCCJ, LDCC32,.5X.6 TSOP1-R, TSSOP32,.8,20 QCCJ, LDCC32,.5X.6 DIP, DIP32,.6 TSOP1, TSSOP32,.8,20 LEAD AND HALOGEN FREE, PLASTIC, DIP-32 TSOP1-R, TSSOP32,.8,20
针数 32 32 32 32 32 32 32
Reach Compliance Code unknown unknow unknown unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
最长访问时间 90 ns 90 ns 120 ns 120 ns 90 ns 90 ns 120 ns
命令用户界面 YES YES YES YES YES YES YES
数据轮询 NO NO NO NO NO NO NO
耐久性 100000 Write/Erase Cycles 100000 Write/Erase Cycles 100000 Write/Erase Cycles 100000 Write/Erase Cycles 100000 Write/Erase Cycles 100000 Write/Erase Cycles 100000 Write/Erase Cycles
JESD-30 代码 R-PQCC-J32 R-PDSO-G32 R-PQCC-J32 R-PDIP-T32 R-PDSO-G32 R-PDIP-T32 R-PDSO-G32
JESD-609代码 e3 e3 e3 e3 e3 e3 e3
长度 13.97 mm 18.4 mm 13.97 mm 42.03 mm 18.4 mm 42.03 mm 18.4 mm
内存密度 1048576 bit 1048576 bi 1048576 bit 1048576 bit 1048576 bit 1048576 bit 1048576 bit
内存集成电路类型 FLASH FLASH FLASH FLASH FLASH FLASH FLASH
内存宽度 8 8 8 8 8 8 8
功能数量 1 1 1 1 1 1 1
端子数量 32 32 32 32 32 32 32
字数 131072 words 131072 words 131072 words 131072 words 131072 words 131072 words 131072 words
字数代码 128000 128000 128000 128000 128000 128000 128000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C
最低工作温度 -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C
组织 128KX8 128KX8 128KX8 128KX8 128KX8 128KX8 128KX8
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 QCCJ TSOP1-R QCCJ DIP TSOP1 DIP TSOP1-R
封装等效代码 LDCC32,.5X.6 TSSOP32,.8,20 LDCC32,.5X.6 DIP32,.6 TSSOP32,.8,20 DIP32,.6 TSSOP32,.8,20
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 CHIP CARRIER SMALL OUTLINE, THIN PROFILE CHIP CARRIER IN-LINE SMALL OUTLINE, THIN PROFILE IN-LINE SMALL OUTLINE, THIN PROFILE
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
峰值回流温度(摄氏度) 260 260 260 260 260 260 260
电源 5 V 5 V 5 V 5 V 5 V 5 V 5 V
编程电压 12 V 12 V 12 V 12 V 12 V 12 V 12 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 3.55 mm 1.2 mm 3.55 mm 5.08 mm 1.2 mm 5.08 mm 1.2 mm
最大待机电流 0.0001 A 0.0001 A 0.0001 A 0.0001 A 0.0001 A 0.0001 A 0.0001 A
最大压摆率 0.03 mA 0.03 mA 0.03 mA 0.03 mA 0.03 mA 0.03 mA 0.03 mA
最大供电电压 (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
最小供电电压 (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
标称供电电压 (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V 5 V
表面贴装 YES YES YES NO YES NO YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL
端子面层 MATTE TIN MATTE TIN Matte Tin (Sn) Matte Tin (Sn) MATTE TIN MATTE TIN MATTE TIN
端子形式 J BEND GULL WING J BEND THROUGH-HOLE GULL WING THROUGH-HOLE GULL WING
端子节距 1.27 mm 0.5 mm 1.27 mm 2.54 mm 0.5 mm 2.54 mm 0.5 mm
端子位置 QUAD DUAL QUAD DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 40 40 40 40 40 40 40
切换位 NO NO NO NO NO NO NO
类型 NOR TYPE NOR TYPE NOR TYPE NOR TYPE NOR TYPE NOR TYPE NOR TYPE
宽度 11.43 mm 8 mm 11.43 mm 15.24 mm 8 mm 15.24 mm 8 mm
厂商名称 Catalyst - Catalyst Catalyst Catalyst Catalyst Catalyst
湿度敏感等级 3 2A 3 - 2A - 2A
Base Number Matches 1 1 1 1 1 1 -

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