LT1167
Single Resistor Gain
Programmable, Precision
Instrumentation Amplifier
FEATURES
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DESCRIPTION
The LT
®
1167 is a low power, precision instrumentation
amplifier that requires only one external resistor to set gains
of 1 to 10,000. The low voltage noise of 7.5nV/√Hz (at 1kHz)
is not compromised by low power dissipation (0.9mA typical
for
±2.3V
to
±15V
supplies).
The high accuracy of 10ppm maximum nonlinearity and
0.08% max gain error (G = 10) is not degraded even for load
resistors as low as 2k (previous monolithic instrumentation
amps used 10k for their nonlinearity specifications). The
LT1167 is laser trimmed for very low input offset voltage
(40µV max), drift (0.3µV/°C), high CMRR (90dB, G = 1) and
PSRR (105dB, G = 1). Low input bias currents of 350pA max
are achieved with the use of superbeta processing. The
output can handle capacitive loads up to 1000pF in any gain
configuration while the inputs are ESD protected up to 13kV
(human body). The LT1167 with two external 5k resistors
passes the IEC 1000-4-2 level 4 specification.
The LT1167, offered in 8-pin PDIP and SO packages, requires
significantly less PC board area than discrete multi op amp
and resistor designs. These advantages make the LT1167 the
most cost effective solution for precision instrumentation
amplifier applications.
, LTC and LT are registered trademarks of Linear Technology Corporation.
Single Gain Set Resistor: G = 1 to 10,000
Gain Error: G = 10, 0.08% Max
Gain Nonlinearity: G = 10, 10ppm Max
Input Offset Voltage: G = 10, 60µV Max
Input Offset Voltage Drift: 0.3
µ
V/
°
C Max
Input Bias Current: 350pA Max
PSRR at G = 1: 105dB Min
CMRR at G = 1: 90dB Min
Supply Current: 1.3mA Max
Wide Supply Range:
±2.3V
to
±18V
1kHz Voltage Noise: 7.5nV/√Hz
0.1Hz to 10Hz Noise: 0.28µV
P-P
Available in 8-Pin PDIP and SO Packages
Meets IEC 1000-4-2 Level 4 ESD Tests with
Two External 5k Resistors
APPLICATIONS
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Bridge Amplifiers
Strain Gauge Amplifiers
Thermocouple Amplifiers
Differential to Single-Ended Converters
Medical Instrumentation
TYPICAL APPLICATION
Single Supply Barometer
V
S
R5
392k
1
LT1634CCZ-1.25
2
3
2
5k
R6
1k
–
5k
R1
825Ω
LT1167
G = 60
8
3
5
4
TO
4-DIGIT
DVM
6
4
2
6
5k
5k
R2
12Ω
R4
50k
R3
50k
R
SET
5
+
1/2
LT1490
7
R7
50k
5
6
R8
100k
–
0.2% ACCURACY AT 25°C
1.2% ACCURACY AT 0°C TO 60°C
V
S
= 8V TO 30V
+
+
3
NONLINEARITY (100ppm/DIV)
1/2
LT1490
1
4
–
+
8
LUCAS NOVA SENOR
NPC-1220-015-A-3L
V
S
1
2
1
7
–
VOLTS
2.800
3.000
3.200
INCHES Hg
28.00
30.00
32.00
1167 TA01
U
U
U
Gain Nonlinearity
1167 TA02
G = 1000
R
L
= 1k
V
OUT
=
±10V
OUTPUT VOLTAGE (2V/DIV)
1
LT1167
ABSOLUTE
MAXIMUM
RATINGS
(Note 1)
PACKAGE/ORDER INFORMATION
ORDER PART
NUMBER
TOP VIEW
R
G
1
–IN 2
+IN 3
–V
S
4
N8 PACKAGE
8-LEAD PDIP
S8 PACKAGE
8-LEAD PLASTIC SO
T
JMAX
= 150°C,
θ
JA
= 130°C/ W (N8)
T
JMAX
= 150°C,
θ
JA
= 190°C/ W (S8)
Supply Voltage ......................................................
±20V
Differential Input Voltage (Within the
Supply Voltage) .....................................................
±40V
Input Voltage (Equal to Supply Voltage) ................
±20V
Input Current (Note 3) ........................................
±20mA
Output Short-Circuit Duration .......................... Indefinite
Operating Temperature Range ................ – 40°C to 85°C
Specified Temperature Range
LT1167AC/LT1167C (Note 4) .................. 0°C to 70°C
LT1167AI/LT1167I ............................. – 40°C to 85°C
Storage Temperature Range ................. – 65°C to 150°C
Lead Temperature (Soldering, 10 sec).................. 300°C
8
–
+
7
6
5
R
G
+V
S
OUTPUT
REF
LT1167ACN8
LT1167ACS8
LT1167AIN8
LT1167AIS8
LT1167CN8
LT1167CS8
LT1167IN8
LT1167IS8
S8 PART MARKING
1167A
1167AI
1167
1167I
Consult factory for Military grade parts.
ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER
G
Gain Range
Gain Error
G = 1 + (49.4k/R
G
)
G=1
G = 10 (Note 2)
G = 100 (Note 2)
G = 1000 (Note 2)
V
S
=
±15V,
V
CM
= 0V, T
A
= 25°C, R
L
= 2k, unless otherwise noted.
LT1167AC/LT1167AI
MIN
TYP
MAX
1
0.008
0.010
0.025
0.040
1
2
15
5
6
20
10k
0.02
0.08
0.08
0.10
6
10
40
12
15
65
LT1167C/LT1167I
MIN
TYP
MAX
1
0.015
0.020
0.030
0.040
1.5
3
20
6
7
25
10k
0.03
0.10
0.10
0.10
10
15
60
15
20
80
%
%
%
%
ppm
ppm
ppm
ppm
ppm
ppm
UNITS
CONDITIONS (Note 7)
Gain Nonlinearity (Note 5)
V
O
=
±10V,
G = 1
V
O
=
±10V,
G = 10 and 100
V
O
=
±10V,
G = 1000
V
O
=
±10V,
G = 1, R
L
= 600
V
O
=
±10V,
G = 10 and 100,
R
L
= 600
V
O
=
±10V,
G = 1000,
R
L
= 600
V
OST
V
OSI
V
OSO
I
OS
I
B
e
n
Total Input Referred Offset Voltage V
OST
= V
OSI
+ V
OSO
/G
Input Offset Voltage
G = 1000, V
S
=
±5V
to
±15V
Output Offset Voltage
Input Offset Current
Input Bias Current
Input Noise Voltage, RTI
0.1Hz to 10Hz, G = 1
0.1Hz to 10Hz, G = 10
0.1Hz to 10Hz, G = 100 and 1000
f
O
= 1kHz
f
O
= 1kHz (Note 3)
G = 1, V
S
=
±5V
to
±15V
15
40
90
50
2.00
0.50
0.28
7.5
67
40
200
320
350
20
50
100
80
2.00
0.50
0.28
60
300
450
500
Total RTI Noise =
√
e
ni 2
+ (e
no
/G)
2
e
ni
e
no
Input Noise Voltage Density, RTI
Output Noise Voltage Density, RTI
12
90
7.5
67
12
90
nV/√Hz
nV/√Hz
2
U
W
U
U
W W
W
µV
µV
pA
pA
µV
P-P
µV
P-P
µV
P-P
LT1167
ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER
i
n
R
IN
C
IN(DIFF)
C
IN(CM)
V
CM
Input Noise Current
Input Noise Current Density
Input Resistance
Differential Input Capacitance
Common Mode Input
Capacitance
Input Voltage Range
CONDITIONS (Note 7)
f
O
= 0.1Hz to 10Hz
f
O
= 10Hz
V
IN
=
±10V
f
O
= 100kHz
f
O
= 100kHz
G = 1, Other Input Grounded
V
S
=
±2.3V
to
±5V
V
S
=
±5V
to
±18V
1k Source Imbalance,
V
CM
= 0V to
±10V
G=1
G = 10
G = 100
G = 1000
V
S
=
±2.3
to
±18V
G=1
G = 10
G = 100
G = 1000
V
S
=
±2.3V
to
±18V
R
L
= 10k
V
S
=
±2.3V
to
±5V
V
S
=
±5V
to
±18V
G=1
G = 10
G = 100
G = 1000
G = 1, V
OUT
=
±10V
10V Step
G = 1 to 100
G = 1000
V
REF
= 0V
– V
S
+ 1.6
0.75
– V
S
+ 1.1
– V
S
+ 1.2
20
27
1000
800
120
12
1.2
14
130
20
50
+ V
S
– 1.6
– V
S
+ 1.6
1
±
0.0001
0.75
200
V
S
=
±15V,
V
CM
= 0V, T
A
= 25°C, R
L
= 2k, unless otherwise noted.
LT1167AC/LT1167AI
MIN
TYP
MAX
10
124
1000
1.6
1.6
200
LT1167C/LT1167I
MIN
TYP
MAX
10
124
1000
1.6
1.6
UNITS
pA
P-P
fA/√Hz
GΩ
pF
pF
– V
S
+ 1.9
– V
S
+ 1.9
+ V
S
– 1.2
+ V
S
– 1.4
– V
S
+ 1.9
– V
S
+ 1.9
+ V
S
– 1.2
+ V
S
– 1.4
V
V
CMRR
Common Mode
Rejection Ratio
90
106
120
126
105
125
131
135
95
115
125
140
120
135
140
150
0.9
1.3
+ V
S
– 1.2
+ V
S
– 1.3
85
100
110
120
100
120
126
130
95
115
125
140
120
135
140
150
0.9
1.3
+ V
S
– 1.2
+ V
S
– 1.3
27
1000
800
120
12
1.2
14
130
20
50
+ V
S
– 1.6
1
±
0.0001
dB
dB
dB
dB
dB
dB
dB
dB
mA
V
V
mA
kHz
kHz
kHz
kHz
V/µs
µs
µs
kΩ
µA
V
PSRR
Power Supply
Rejection Ratio
I
S
V
OUT
Supply Current
Output Voltage Swing
– V
S
+ 1.1
– V
S
+ 1.2
20
I
OUT
BW
Output Current
Bandwidth
SR
Slew Rate
Settling Time to 0.01%
R
REFIN
I
REFIN
V
REF
A
VREF
Reference Input Resistance
Reference Input Current
Reference Voltage Range
Reference Gain to Output
3
LT1167
ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER
Gain Error
G=1
G = 10 (Note 2)
G = 100 (Note 2)
G = 1000 (Note 2)
V
OUT
=
±10V,
G = 1
V
OUT
=
±10V,
G = 10 and 100
V
OUT
=
±10V,
G = 1000
G < 1000 (Note 2)
V
OST
= V
OSI
+ V
OSO
/G
V
S
=
±5V
to
±15V
(Notes 3, 6)
V
S
=
±5V
to
±15V
(Notes 3, 6)
(Note 3)
(Note 3)
q
q
q
q
q
q
q
q
V
S
=
±15V,
V
CM
= 0V, 0°C
≤
T
A
≤
70°C, R
L
= 2k, unless otherwise noted.
LT1167AC
MIN
TYP
MAX
q
q
q
q
q
q
q
q
CONDITIONS (Note 7)
LT1167C
MIN
TYP
MAX
0.012
0.100
0.120
0.140
2
4
25
20
0.04
0.33
0.33
0.35
15
20
80
50
UNITS
%
%
%
%
ppm
ppm
ppm
ppm/°C
0.01
0.08
0.09
0.14
1.5
3
20
20
0.03
0.30
0.30
0.33
10
15
60
50
Gain Nonlinearity
G/T
V
OST
V
OSI
V
OSIH
V
OSO
V
OSOH
V
OSI
/T
V
OSO
/T
I
OS
I
OS
/T
I
B
I
B
/T
V
CM
Gain vs Temperature
Total Input Referred
Offset Voltage
Input Offset Voltage
Input Offset Voltage Hysteresis
Output Offset Voltage
Output Offset Voltage Hysteresis
Input Offset Drift (RTI)
Output Offset Drift
Input Offset Current
Input Offset Current Drift
Input Bias Current
Input Bias Current Drift
Input Voltage Range
18
3.0
60
30
0.05
0.7
100
0.3
75
0.4
– V
S
+ 2.1
– V
S
+ 2.1
60
380
0.3
3
400
450
23
3.0
70
30
0.06
0.8
120
0.4
105
0.4
80
500
0.4
4
550
600
µV
µV
µV
µV
µV/°C
µV/°C
pA
pA/°C
pA
pA/°C
G = 1, Other Input Grounded
V
S
=
±2.3V
to
±5V
V
S
=
±5V
to
±18V
1k Source Imbalance,
V
CM
= 0V to
±10V
G=1
G = 10
G = 100
G = 1000
V
S
=
±2.3V
to
±18V
G=1
G = 10
G = 100
G = 1000
V
S
=
±2.3V
to
±18V
R
L
= 10k
V
S
=
±2.3V
to
±5V
V
S
=
±5V
to
±18V
G = 1, V
OUT
=
±10V
(Note 3)
q
q
+ V
S
– 1.3
+ V
S
– 1.4
– V
S
+ 2.1
– V
S
+ 2.1
+ V
S
– 1.3
+ V
S
– 1.4
V
V
CMRR
Common Mode
Rejection Ratio
q
q
q
q
q
q
q
q
q
q
q
q
q
q
88
100
115
117
103
123
127
129
92
110
120
135
115
130
135
145
1.0
1.5
+ V
S
– 1.3
+ V
S
– 1.5
21
1.1
+ V
S
– 1.6
83
97
113
114
98
118
124
126
92
110
120
135
115
130
135
145
1.0
1.5
+ V
S
–1.3
+ V
S
– 1.5
21
1.1
+ V
S
– 1.6
dB
dB
dB
dB
dB
dB
dB
dB
mA
V
V
mA
V/µs
V
PSRR
Power Supply Rejection Ratio
I
S
V
OUT
Supply Current
Output Voltage Swing
– V
S
+ 1.4
– V
S
+ 1.6
16
0.65
– V
S
+ 1.6
– V
S
+ 1.4
– V
S
+ 1.6
16
0.65
– V
S
+ 1.6
I
OUT
SR
V
REF
Output Current
Slew Rate
REF Voltage Range
4
LT1167
ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER
Gain Error
G=1
G = 10 (Note 2)
G = 100 (Note 2)
G = 1000 (Note 2)
V
S
=
±15V,
V
CM
= 0V, – 40°C
≤
T
A
≤
85°C, R
L
= 2k, unless otherwise noted. (Note 4)
CONDITIONS (Note 7)
q
q
q
q
q
q
q
q
MIN
LT1167AI
TYP
MAX
0.014
0.130
0.140
0.160
2
5
26
20
0.04
0.40
0.40
0.40
15
20
70
50
MIN
LT1167I
TYP
MAX
0.015
0.140
0.150
0.180
3
6
30
20
0.05
0.42
0.42
0.45
20
30
100
50
UNITS
%
%
%
%
ppm
ppm
ppm
ppm/°C
G
N
Gain Nonlinearity (Notes 2, 4)
V
O
=
±10V,
G = 1
V
O
=
±10V,
G = 10 and 100
V
O
=
±10V,
G = 1000
G < 1000 (Note 2)
V
OST
= V
OSI
+ V
OSO
/G
G/T
V
OST
V
OSI
V
OSIH
V
OSO
V
OSOH
V
OSI
/T
V
OSO
/T
I
OS
I
OS
/T
I
B
I
B
/T
V
CM
CMRR
Gain vs Temperature
Total Input Referred
Offset Voltage
Input Offset Voltage
Input Offset Voltage Hysteresis
Output Offset Voltage
q
(Notes 3, 6)
q
20
3.0
180
30
0.05
0.8
110
0.3
180
0.5
– V
S
+ 2.1
– V
S
+ 2.1
75
500
0.3
5
550
600
+ V
S
– 1.3
+ V
S
– 1.4
– V
S
+ 2.1
– V
S
+ 2.1
25
3.0
200
30
0.06
1
120
0.3
220
0.6
100
600
0.4
6
700
800
+V
S
– 1.3
+ V
S
– 1.4
µV
µV
µV
µV
µV/°C
µV/°C
pA
pA/°C
pA
pA/°C
V
V
Output Offset Voltage Hysteresis (Notes 3, 6)
Input Offset Drift (RTI)
Output Offset Drift
Input Offset Current
Input Offset Current Drift
Input Bias Current
Input Bias Current Drift
Input Voltage Range
Common Mode Rejection Ratio
V
S
=
±2.3V
to
±5V
V
S
=
±5V
to
±18V
1k Source Imbalance,
V
CM
= 0V to
±10V
G=1
G = 10
G = 100
G = 1000
V
S
=
±2.3V
to
±18V
G=1
G = 10
G = 100
G = 1000
V
S
=
±2.3V
to
±5V
V
S
=
±5V
to
±18V
G = 1, V
OUT
=
±10V
(Note 3)
(Note 3)
(Note 3)
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
86
98
114
116
100
120
125
128
– V
S
+ 1.4
– V
S
+ 1.6
15
0.55
– V
S
+ 1.6
90
105
118
133
112
125
132
140
1.1
1.6
+ V
S
– 1.3
+ V
S
– 1.5
20
0.95
+ V
S
– 1.6
81
95
112
112
95
115
120
125
– V
S
+ 1.4
– V
S
+ 1.6
15
0.55
– V
S
+ 1.6
90
105
118
133
112
125
132
140
1.1
1.6
+ V
S
– 1.3
+ V
S
– 1.5
20
0.95
+ V
S
– 1.6
dB
dB
dB
dB
dB
dB
dB
dB
mA
V
V
mA
V/µs
V
PSRR
Power Supply Rejection Ratio
I
S
V
OUT
I
OUT
SR
V
REF
Supply Current
Output Voltage Swing
Output Current
Slew Rate
REF Voltage Range
The
q
denotes specifications that apply over the full specified
temperature range.
Note 1:
Absolute Maximum Ratings are those values beyond which the life
of a device may be imparied.
Note 2:
Does not include the effect of the external gain resistor R
G
.
Note 3:
This parameter is not 100% tested.
Note 4:
The LT1167AC/LT1167C are designed, characterized and expected
to meet the industrial temperature limits, but are not tested at – 40°C and
85°C. I-grade parts are guaranteed.
Note 5:
This parameter is measured in a high speed automatic tester that
does not measure the thermal effects with longer time constants. The
magnitude of these thermal effects are dependent on the package used,
heat sinking and air flow conditions.
Note 6:
Hysteresis in offset voltage is created by package stress that
differs depending on whether the IC was previously at a higher or lower
temperature. Offset voltage hysteresis is always measured at 25°C, but
the IC is cycled to 85°C I-grade (or 70°C C-grade) or – 40°C I-grade
(0°C C-grade) before successive measurement. 60% of the parts will
pass the typical limit on the data sheet.
Note 7:
Typical parameters are defined as the 60% of the yield parameter
distribution.
5
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