Datasheet> 器件分类 > 存储> 存储> IS61VPS102418A-200TQI

IS61VPS102418A-200TQI: 产品描述1MX18 CACHE SRAM, 3.1ns, PQFP100, TQFP-100; 产品类别存储存储; 文件大小370KB，共35页; 制造商Integrated Silicon Solution ( ISSI )

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IS61VPS102418A-200TQI概述

1MX18 CACHE SRAM, 3.1ns, PQFP100, TQFP-100

IS61VPS102418A-200TQI规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
厂商名称	Integrated Silicon Solution ( ISSI )
零件包装代码	QFP
包装说明	TQFP-100
针数	100
Reach Compliance Code	compliant
ECCN代码	3A991.B.2.A
Factory Lead Time	12 weeks
最长访问时间	3.1 ns
其他特性	PIPELINED ARCHITECTURE
最大时钟频率 (fCLK)	200 MHz
I/O 类型	COMMON
JESD-30 代码	R-PQFP-G100
JESD-609代码	e0
长度	20 mm
内存密度	18874368 bit
内存集成电路类型	CACHE SRAM
内存宽度	18
功能数量	1
端子数量	100
字数	1048576 words
字数代码	1000000
工作模式	SYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-40 °C
组织	1MX18
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	LQFP
封装等效代码	QFP100,.63X.87
封装形状	RECTANGULAR
封装形式	FLATPACK, LOW PROFILE
并行/串行	PARALLEL
峰值回流温度（摄氏度）	240
电源	2.5 V
认证状态	Not Qualified
座面最大高度	1.6 mm
最大待机电流	0.125 A
最小待机电流	2.38 V
最大压摆率	0.475 mA
最大供电电压 (Vsup)	2.625 V
最小供电电压 (Vsup)	2.375 V
标称供电电压 (Vsup)	2.5 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子面层	Tin/Lead (Sn/Pb)
端子形式	GULL WING
端子节距	0.65 mm
端子位置	QUAD
处于峰值回流温度下的最长时间	30
宽度	14 mm
Base Number Matches	1

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IS61VPS25672A IS61LPS25672A

IS61VPS51236A IS61LPS51236A

IS61VPS102418A IS61LPS102418A

256K x 72, 512K x 36, 1024K x 18

18Mb SYNCHRONOUS PIPELINED,

SINGLE CYCLE DESELECT STATIC RAM

FEATURES

• Internal self-timed write cycle

• Individual Byte Write Control and Global Write

• Clock controlled, registered address, data and

control

• Burst sequence control using MODE input

• Three chip enable option for simple depth

expansion and address pipelining

• Common data inputs and data outputs

• Auto Power-down during deselect

• Single cycle deselect

• Snooze MODE for reduced-power standby

• JTAG Boundary Scan for PBGA package

• Power Supply

LPS: V

3.3V + 5%, V

DDQ

3.3V/2.5V + 5%

VPS: V

2.5V + 5%, V

DDQ

2.5V + 5%

• JEDEC 100-Pin TQFP, 119-ball PBGA, 165-ball

PBGA, and 209-ball (x72) packages

• Lead-free available

MAY 2010

DESCRIPTION

The

ISSI

IS61LPS/VPS51236A, IS61LPS/VPS102418A,

and IS61LPS/VPS25672A are high-speed, low-power syn-

chronous static RAMs designed to provide burstable, high-

performance memory for communication and networking

applications. The IS61LPS/VPS51236A is organized as

524,288 words by 36 bits, the IS61LPS/VPS102418A is

organized as 1,048,576 words by 18 bits, and the IS61LPS/

VPS25672A is organized as 262,144 words by 72 bits.

Fabricated with

ISSI

's advanced CMOS technology, the

device integrates a 2-bit burst counter, high-speed SRAM

core, and high-drive capability outputs into a single mono-

lithic circuit. All synchronous inputs pass through regis-

ters controlled by a positive-edge-triggered single clock

input.

Write cycles are internally self-timed and are initiated by

the rising edge of the clock input. Write cycles can be one

to four bytes wide as controlled by the write control inputs.

Separate byte enables allow individual bytes to be written.

The byte write operation is performed by using the byte

write enable (BWE) input combined with one or more

individual byte write signals (BWx). In addition, Global

Write (GW) is available for writing all bytes at one time,

regardless of the byte write controls.

Bursts can be initiated with either

ADSP

(Address Status

Processor) or

ADSC

(Address Status Cache Controller)

input pins. Subsequent burst addresses can be generated

internally and controlled by the

ADV

(burst address

advance) input pin.

The mode pin is used to select the burst sequence order,

Linear burst is achieved when this pin is tied LOW.

Interleave burst is achieved when this pin is tied HIGH or

left floating.

FAST ACCESS TIME

Symbol

Parameter

Clock Access Time

Cycle Time

Frequency

250

2.6

250

200

3.1

200

Units

MHz

Copyright © 2010 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability

arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any

published information and before placing orders for products.

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. N

02/12/2010

IS61VPS102418A-200TQI相似产品对比

	IS61VPS102418A-200TQI	IS61VPS102418A-200TQ	IS61LPS25672A-250B1L	IS61LPS102418A-250TQLI	IS61LPS51236A-200B2LI	IS61VPS102418A-250B2
描述	1MX18 CACHE SRAM, 3.1ns, PQFP100, TQFP-100	1MX18 CACHE SRAM, 3.1ns, PQFP100, TQFP-100	Cache SRAM, 256KX72, 2.6ns, CMOS, PBGA209, 14 X 22 MM, 1 MM PITCH, LEAD FREE, PLASTIC, BGA-209	Cache SRAM, 1MX18, 2.6ns, CMOS, PQFP100, LEAD FREE, TQFP-100	Cache SRAM, 512KX36, 3.1ns, CMOS, PBGA119, 14 X 22 MM, 1 MM PITCH, LEAD FREE, PLASTIC, BGA-119	Cache SRAM, 1MX18, 2.6ns, CMOS, PBGA119, 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-119
是否无铅	含铅	含铅	不含铅	不含铅	不含铅	含铅
是否Rohs认证	不符合	不符合	符合	符合	符合	不符合
厂商名称	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )
零件包装代码	QFP	QFP	BGA	QFP	BGA	BGA
包装说明	TQFP-100	TQFP-100	BGA, BGA209,11X19,40	LQFP, QFP100,.63X.87	BGA, BGA119,7X17,50	BGA, BGA119,7X17,50
针数	100	100	209	100	119	119
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant
ECCN代码	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
最长访问时间	3.1 ns	3.1 ns	2.6 ns	2.6 ns	3.1 ns	2.6 ns
其他特性	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE
最大时钟频率 (fCLK)	200 MHz	200 MHz	250 MHz	250 MHz	200 MHz	250 MHz
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	R-PQFP-G100	R-PQFP-G100	R-PBGA-B209	R-PQFP-G100	R-PBGA-B119	R-PBGA-B119
JESD-609代码	e0	e0	e1	e3	e1	e0
长度	20 mm	20 mm	22 mm	20 mm	22 mm	22 mm
内存密度	18874368 bit	18874368 bit	18874368 bit	18874368 bit	18874368 bit	18874368 bit
内存集成电路类型	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM
内存宽度	18	18	72	18	36	18
功能数量	1	1	1	1	1	1
端子数量	100	100	209	100	119	119
字数	1048576 words	1048576 words	262144 words	1048576 words	524288 words	1048576 words
字数代码	1000000	1000000	256000	1000000	512000	1000000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	85 °C	70 °C	70 °C	85 °C	85 °C	70 °C
组织	1MX18	1MX18	256KX72	1MX18	512KX36	1MX18
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	LQFP	LQFP	BGA	LQFP	BGA	BGA
封装等效代码	QFP100,.63X.87	QFP100,.63X.87	BGA209,11X19,40	QFP100,.63X.87	BGA119,7X17,50	BGA119,7X17,50
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	GRID ARRAY	FLATPACK, LOW PROFILE	GRID ARRAY	GRID ARRAY
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	240	NOT SPECIFIED	260	260	260	NOT SPECIFIED
电源	2.5 V	2.5 V	2.5/3.3,3.3 V	2.5/3.3,3.3 V	2.5/3.3,3.3 V	2.5 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.6 mm	1.6 mm	1.95 mm	1.6 mm	3.5 mm	3.5 mm
最大待机电流	0.125 A	0.11 A	0.11 A	0.125 A	0.125 A	0.11 A
最小待机电流	2.38 V	2.38 V	3.14 V	3.14 V	3.14 V	2.38 V
最大压摆率	0.475 mA	0.425 mA	0.45 mA	0.5 mA	0.475 mA	0.45 mA
最大供电电压 (Vsup)	2.625 V	2.625 V	3.465 V	3.465 V	3.465 V	2.625 V
最小供电电压 (Vsup)	2.375 V	2.375 V	3.135 V	3.135 V	3.135 V	2.375 V
标称供电电压 (Vsup)	2.5 V	2.5 V	3.3 V	3.3 V	3.3 V	2.5 V
表面贴装	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	COMMERCIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL	COMMERCIAL
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Silver/Copper (Sn/Ag/Cu)	Matte Tin (Sn) - annealed	TIN SILVER COPPER	Tin/Lead (Sn/Pb)
端子形式	GULL WING	GULL WING	BALL	GULL WING	BALL	BALL
端子节距	0.65 mm	0.65 mm	1 mm	0.65 mm	1.27 mm	1.27 mm
端子位置	QUAD	QUAD	BOTTOM	QUAD	BOTTOM	BOTTOM
处于峰值回流温度下的最长时间	30	NOT SPECIFIED	10	40	40	NOT SPECIFIED
宽度	14 mm	14 mm	14 mm	14 mm	14 mm	14 mm
Base Number Matches	1	1	1	1	-	-
湿度敏感等级	-	-	3	3	3	3

IS61VPS102418A-200TQI

IS61VPS102418A-200TQI在线购买

IS61VPS102418A-200TQI概述

IS61VPS102418A-200TQI规格参数

文档预览

IS61VPS102418A-200TQI相似产品对比

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