ADC, Flash Method, 8-Bit, 1 Func, 1 Channel, Parallel, 8 Bits Access, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28
| 参数名称 | 属性值 |
| 厂商名称 | IDT (Integrated Device Technology) |
| 零件包装代码 | DIP |
| 包装说明 | DIP, |
| 针数 | 28 |
| Reach Compliance Code | unknown |
| ECCN代码 | 3A001.A.2.C |
| 最大模拟输入电压 | 0.1 V |
| 最小模拟输入电压 | -1.9 V |
| 转换器类型 | ADC, FLASH METHOD |
| JESD-30 代码 | R-PDIP-T28 |
| JESD-609代码 | e0 |
| 长度 | 36.576 mm |
| 最大线性误差 (EL) | 0.4% |
| 标称负供电电压 | -5.2 V |
| 模拟输入通道数量 | 1 |
| 位数 | 8 |
| 功能数量 | 1 |
| 端子数量 | 28 |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 输出位码 | BINARY |
| 输出格式 | PARALLEL, 8 BITS |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | DIP |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 认证状态 | Not Qualified |
| 采样速率 | 40 MHz |
| 座面最大高度 | 4.699 mm |
| 标称供电电压 | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子面层 | TIN LEAD |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 宽度 | 15.24 mm |
| Base Number Matches | 1 |
| IDT75C58SC30PB | IDT75C58SC20LB | IDT75C58SC30SOB | IDT75C58SC30SO | IDT75C58SB20DB | IDT75C58SB20D | IDT75C58S20DB | |
|---|---|---|---|---|---|---|---|
| 描述 | ADC, Flash Method, 8-Bit, 1 Func, 1 Channel, Parallel, 8 Bits Access, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28 | ADC, Flash Method, 8-Bit, 1 Func, 1 Channel, Parallel, 8 Bits Access, CMOS, CQCC28, LCC-28 | ADC, Flash Method, 8-Bit, 1 Func, 1 Channel, Parallel, 8 Bits Access, CMOS, PDSO28, SOIC-28 | ADC, Flash Method, 8-Bit, 1 Func, 1 Channel, Parallel, 8 Bits Access, CMOS, PDSO28, SOIC-28 | ADC, Flash Method, 8-Bit, 1 Func, 1 Channel, Parallel, 8 Bits Access, CMOS, CDIP28, 0.600 INCH, HERMETIC SEALED, CERDIP-28 | ADC, Flash Method, 8-Bit, 1 Func, 1 Channel, Parallel, 8 Bits Access, CMOS, CDIP28, 0.600 INCH, HERMETIC SEALED, CERDIP-28 | ADC, Flash Method, 8-Bit, 1 Func, 1 Channel, Parallel, 8 Bits Access, CMOS, CDIP28, 0.600 INCH, HERMETIC SEALED, CERDIP-28 |
| 厂商名称 | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) |
| 零件包装代码 | DIP | QLCC | SOIC | SOIC | DIP | DIP | DIP |
| 包装说明 | DIP, | LCC-28 | SOP, | SOIC-28 | 0.600 INCH, HERMETIC SEALED, CERDIP-28 | 0.600 INCH, HERMETIC SEALED, CERDIP-28 | 0.600 INCH, HERMETIC SEALED, CERDIP-28 |
| 针数 | 28 | 28 | 28 | 28 | 28 | 28 | 28 |
| Reach Compliance Code | unknown | not_compliant | unknown | not_compliant | not_compliant | not_compliant | _compli |
| ECCN代码 | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | EAR99 | 3A001.A.2.C | EAR99 | 3A001.A.2.C |
| 最大模拟输入电压 | 0.1 V | 0.1 V | 0.1 V | 0.1 V | 0.1 V | 0.1 V | 0.1 V |
| 最小模拟输入电压 | -1.9 V | -1.9 V | -1.9 V | -1.9 V | -1.9 V | -1.9 V | -1.9 V |
| 转换器类型 | ADC, FLASH METHOD | ADC, FLASH METHOD | ADC, FLASH METHOD | ADC, FLASH METHOD | ADC, FLASH METHOD | ADC, FLASH METHOD | ADC, FLASH METHOD |
| JESD-30 代码 | R-PDIP-T28 | S-CQCC-N28 | R-PDSO-G28 | R-PDSO-G28 | R-GDIP-T28 | R-GDIP-T28 | R-GDIP-T28 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| 长度 | 36.576 mm | 11.43 mm | 18.3642 mm | 18.3642 mm | 37.211 mm | 37.211 mm | 37.211 mm |
| 最大线性误差 (EL) | 0.4% | 0.3906% | 0.4% | 0.4% | 0.3% | 0.3% | 0.2% |
| 标称负供电电压 | -5.2 V | -5.2 V | -5.2 V | -5.2 V | -5.2 V | -5.2 V | -5.2 V |
| 模拟输入通道数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 位数 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 28 | 28 | 28 | 28 | 28 | 28 | 28 |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | 70 °C | 125 °C | 70 °C | 125 °C |
| 最低工作温度 | -55 °C | -55 °C | -55 °C | - | -55 °C | - | -55 °C |
| 输出位码 | BINARY | BINARY | BINARY | BINARY | BINARY | BINARY | BINARY |
| 输出格式 | PARALLEL, 8 BITS | PARALLEL, 8 BITS | PARALLEL, 8 BITS | PARALLEL, 8 BITS | PARALLEL, 8 BITS | PARALLEL, 8 BITS | PARALLEL, 8 BITS |
| 封装主体材料 | PLASTIC/EPOXY | CERAMIC, METAL-SEALED COFIRED | PLASTIC/EPOXY | PLASTIC/EPOXY | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED |
| 封装代码 | DIP | QCCN | SOP | SOP | DIP | DIP | DIP |
| 封装形状 | RECTANGULAR | SQUARE | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | CHIP CARRIER | SMALL OUTLINE | SMALL OUTLINE | IN-LINE | IN-LINE | IN-LINE |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 采样速率 | 40 MHz | 30 MHz | 40 MHz | 40 MHz | 30 MHz | 30 MHz | 30 MHz |
| 座面最大高度 | 4.699 mm | 2.54 mm | 3.048 mm | 3.048 mm | 5.08 mm | 5.08 mm | 5.08 mm |
| 标称供电电压 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | YES | YES | YES | NO | NO | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | MILITARY | MILITARY | MILITARY | COMMERCIAL | MILITARY | COMMERCIAL | MILITARY |
| 端子面层 | TIN LEAD | Tin/Lead (Sn/Pb) | TIN LEAD | Tin/Lead (Sn85Pb15) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE | NO LEAD | GULL WING | GULL WING | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子节距 | 2.54 mm | 1.27 mm | 1.27 mm | 1.27 mm | 2.54 mm | 2.54 mm | 2.54 mm |
| 端子位置 | DUAL | QUAD | DUAL | DUAL | DUAL | DUAL | DUAL |
| 宽度 | 15.24 mm | 11.43 mm | 8.763 mm | 8.763 mm | 15.24 mm | 15.24 mm | 15.24 mm |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | - |
| 是否Rohs认证 | - | 不符合 | - | 不符合 | 不符合 | 不符合 | 不符合 |
| 封装等效代码 | - | LCC28,.45SQ | - | SOP28,.5 | DIP28,.6 | DIP28,.6 | DIP28,.6 |
| 峰值回流温度（摄氏度） | - | NOT SPECIFIED | - | - | NOT SPECIFIED | NOT SPECIFIED | 225 |
| 电源 | - | 5,-5.2 V | - | 5,-5.2 V | 5,-5.2 V | 5,-5.2 V | 5,-5.2 V |
| 处于峰值回流温度下的最长时间 | - | NOT SPECIFIED | - | - | NOT SPECIFIED | NOT SPECIFIED | 20 |
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