FLL400IP-2
L-Band Medium & High Power GaAs FET
FEATURES
•
•
•
•
•
Push-Pull Configuration
High Power Output: 35W (Typ.)
High PAE: 44% (Typ.)
Broad Frequency Range: 800 to 2000 MHz.
Suitable for class A operation at 10V
and class AB operation at 12V
DESCRIPTION
The FLL400IP-2 is a 35 Watt GaAs FET that employs a push-pull design which
offers ease of matching, greater consistency and a broader bandwidth for high
power L-band amplifiers. This product is targeted to reduce the size and complexity
of highly linear, high power base station transmitting amplifiers. This new product is
uniquely suited for use in PCS/PCN base station amplifiers as it offers high gain,
long term reliability and ease of use.
APPLICATIONS
•
Solid State Base-Station Power Amplifier.
• PCS/PCN Communication Systems.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
V
DS
V
GS
P
T
T
stg
T
ch
Tc = 25°C
Condition
Rating
15
-5
107
-65 to +175
+175
Unit
V
V
W
°C
°C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 12 volts.
2. The forward and reverse gate currents should not exceed 54.4 and -17.4 mA respectively with
gate resistance of 25Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Drain Current
Transconductance
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Output Power at 1 dB G.C.P.
Power Gain at 1 dB G.C.P.
Drain Current
Power-Added Efficiency
Output Power at 1 dB G.C.P.
Power Gain at 1 dB G.C.P.
Thermal Resistance
CASE STYLE: IP
Symbol
I
DSS
gm
V
p
V
GSO
P
1dB
G
1dB
I
DSR
η
add
P
1dB
G
1dB
R
th
V
DS
= 12V
f=1.96GHz
I
DS
= 2A
V
DS
= 10V
f=1.96GHz
I
DS
= 2A
Channel to Case
Conditions
V
DS
= 5V, V
GS
=0V
V
DS
= 5V, I
DS
=7.2A
V
DS
= 5V, I
DS
=720mA
I
GS
= -720µA
Limits
Min. Typ. Max.
-
-
-1.0
-5
44.5
9.0
-
-
-
-
-
12
6000
-2.0
-
45.5
10.0
6.0
44
44.5
10.0
1.0
16
-
-3.5
-
-
-
8.0
-
-
-
1.4
Unit
A
mS
V
V
dBm
dB
A
%
dBm
dB
°C/W
G.C.P.: Gain Compression Point
Edition 1.6
December 1999
1
FLL400IP-2
L-Band Medium & High Power GaAs FET
POWER DERATING CURVE
120
OUTPUT POWER &
η
add vs. INPUT POWER
46
45
100
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
0
50
100
150
200
VDS = 12V
IDS = 2A
f = 1.96GHz
Pout
50
40
Total Power Dissipation (W)
80
60
Output Power (dBm)
40
η
add
30
20
10
0
20
19
21
23
25
27
29
31
33
35
37
Case Temperature (°C)
Input Power (dBm)
OUTPUT POWER vs. FREQUENCY
47
46
45
44
43
42
VDS = 12V
IDS = 2A
Pin=37dBm
Output Power (dBm)
30dBm
41
40
39
38
37
36
35
34
33
32
31
30
1.8
1.85
1.9
1.95
2.0
20dBm
25dBm
Frequency (GHz)
2
η
add (%)
FLL400IP-2
L-Band Medium & High Power GaAs FET
OUTPUT POWER vs. IMD
-12
-14
-16
-18
-20
-22
-24
-26
-28
-30
-32
-34
-36
-38
-40
-42
-44
-46
-48
-50
-52
-54
-56
-58
-60
VDS = 12V
IDS = 2A
f = 1.96GHz
∆f
= +5.0MHz
IM3
IMD (dBc)
IM5
26
28
30
32
34
36
38
40
42
44
Total Output Power (dBm)
OUTPUT POWER vs. IMD
-20
-22
-24
-26
-28
-30
-32
-34
-36
-38
-40
-42
-44
-46
-48
-50
-52
-54
-56
-58
-60
VDS = 10V
IDS = 5A
f = 1.96GHz
∆f
= +5MHz
IM3
IM5
IMD (dBc)
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
Total Output Power (dBm)
3
FLL400IP-2
L-Band Medium & High Power GaAs FET
Case Style "IP"
Metal-Ceramic Hermetic Package
22
±0.2
(0.866)
18.6
±0.2
(0.732)
2-1
(0.039)
45°
1
2
3.0±0.5 MIN.
(0.118)
0.1
+0.05
-0.01
(0.039)
2.4
(0.094)
2.6
±0.2
(0.102)
9.8
±0.2
(0.386)
6
5
2-R1.3
±0.2
(0.051)
5
(0.197)
13.8
±0.2
(0.543)
13.3
(0.523)
4
3
3.0±0.5 MIN.
(0.118)
2-1.4
(0.055)
5.5MAX
(0.217)
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS EUROPE, GmbH
Quantum Devices Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
1.9
(0.075)
8.2
(0.332)
1, 2: Gate
3, 6: Source
4, 5: Drain
Unit: mm (inches)
CAUTION
Fujitsu Compound Semiconductor Products contain
gallium arsenide
(GaAs)
which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not put these products into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1999 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0799M200
4
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