IC 1-CH 6-BIT FLASH METHOD ADC, PARALLEL ACCESS, CQCC28, CERAMIC, LCC-28, Analog to Digital Converter
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | ADI(亚德诺半导体) |
| 零件包装代码 | QLCC |
| 包装说明 | CERAMIC, LCC-28 |
| 针数 | 28 |
| Reach Compliance Code | compliant |
| ECCN代码 | 3A001.A.2.C |
| 最大模拟输入电压 | 2 V |
| 最小模拟输入电压 | -2 V |
| 最长转换时间 | 0.0133 µs |
| 转换器类型 | ADC, FLASH METHOD |
| JESD-30 代码 | S-CQCC-N28 |
| JESD-609代码 | e0 |
| 最大线性误差 (EL) | 1.5625% |
| 标称负供电电压 | -5.2 V |
| 模拟输入通道数量 | 1 |
| 位数 | 6 |
| 功能数量 | 1 |
| 端子数量 | 28 |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 输出位码 | BINARY |
| 输出格式 | PARALLEL, WORD |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | QCCN |
| 封装等效代码 | LCC28,.45SQ |
| 封装形状 | SQUARE |
| 封装形式 | CHIP CARRIER |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 电源 | 5,-5.2 V |
| 认证状态 | Not Qualified |
| 筛选级别 | MIL-STD-883 |
| 标称供电电压 | 5 V |
| 表面贴装 | YES |
| 技术 | BIPOLAR |
| 温度等级 | MILITARY |
| 端子面层 | TIN LEAD |
| 端子形式 | NO LEAD |
| 端子节距 | 1.27 mm |
| 端子位置 | QUAD |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| Base Number Matches | 1 |
| 5962-89900013X | 5962-8990001EX | 5962-8990001EA | |
|---|---|---|---|
| 描述 | IC 1-CH 6-BIT FLASH METHOD ADC, PARALLEL ACCESS, CQCC28, CERAMIC, LCC-28, Analog to Digital Converter | IC 1-CH 6-BIT FLASH METHOD ADC, PARALLEL ACCESS, CDIP16, CERAMIC, DIP-16, Analog to Digital Converter | IC 1-CH 6-BIT FLASH METHOD ADC, PARALLEL ACCESS, CDIP16, CERAMIC, DIP-16, Analog to Digital Converter |
| 厂商名称 | ADI(亚德诺半导体) | ADI(亚德诺半导体) | ADI(亚德诺半导体) |
| 零件包装代码 | QLCC | DIP | DIP |
| 包装说明 | CERAMIC, LCC-28 | CERAMIC, DIP-16 | DIP, |
| 针数 | 28 | 16 | 16 |
| Reach Compliance Code | compliant | compliant | compliant |
| ECCN代码 | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C |
| 最大模拟输入电压 | 2 V | 2 V | 2 V |
| 最小模拟输入电压 | -2 V | -2 V | -2 V |
| 最长转换时间 | 0.0133 µs | 0.0133 µs | 0.0133 µs |
| 转换器类型 | ADC, FLASH METHOD | ADC, FLASH METHOD | ADC, FLASH METHOD |
| JESD-30 代码 | S-CQCC-N28 | R-CDIP-T16 | R-CDIP-T16 |
| 最大线性误差 (EL) | 1.5625% | 1.5625% | 1.5625% |
| 标称负供电电压 | -5.2 V | -5.2 V | -5.2 V |
| 模拟输入通道数量 | 1 | 1 | 1 |
| 位数 | 6 | 6 | 6 |
| 功能数量 | 1 | 1 | 1 |
| 端子数量 | 28 | 16 | 16 |
| 最高工作温度 | 125 °C | 125 °C | 125 °C |
| 最低工作温度 | -55 °C | -55 °C | -55 °C |
| 输出位码 | BINARY | BINARY | BINARY |
| 输出格式 | PARALLEL, WORD | PARALLEL, WORD | PARALLEL, WORD |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | QCCN | DIP | DIP |
| 封装形状 | SQUARE | RECTANGULAR | RECTANGULAR |
| 封装形式 | CHIP CARRIER | IN-LINE | IN-LINE |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified |
| 标称供电电压 | 5 V | 5 V | 5 V |
| 表面贴装 | YES | NO | NO |
| 技术 | BIPOLAR | BIPOLAR | BIPOLAR |
| 温度等级 | MILITARY | MILITARY | MILITARY |
| 端子形式 | NO LEAD | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | QUAD | DUAL | DUAL |
| Base Number Matches | 1 | 1 | 1 |
| JESD-609代码 | e0 | - | e0 |
| 封装等效代码 | LCC28,.45SQ | DIP16,.3 | - |
| 电源 | 5,-5.2 V | 5,-5.2 V | - |
| 筛选级别 | MIL-STD-883 | MIL-STD-883 | - |
| 端子面层 | TIN LEAD | - | TIN LEAD |
| 端子节距 | 1.27 mm | 2.54 mm | - |
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