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SGF29

产品描述For C to Ku-band Local Oscillator and Amplifier
产品类别分立半导体    晶体管   
文件大小40KB,共5页
制造商SANYO
官网地址http://www.semic.sanyo.co.jp/english/index-e.html
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SGF29概述

For C to Ku-band Local Oscillator and Amplifier

SGF29规格参数

参数名称属性值
包装说明SMALL OUTLINE, R-PDSO-G4
针数4
Reach Compliance Codeunknow
ECCN代码EAR99
其他特性LOW NOISE, HIGH RELIABILITY
外壳连接SOURCE
配置SINGLE
最小漏源击穿电压6 V
最大漏极电流 (Abs) (ID)0.1 A
最大漏极电流 (ID)0.1 A
FET 技术METAL SEMICONDUCTOR
最高频带KU BAND
JESD-30 代码R-PDSO-G4
元件数量1
端子数量4
工作模式DEPLETION MODE
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性/信道类型N-CHANNEL
功耗环境最大值0.2 W
认证状态Not Qualified
表面贴装YES
端子形式GULL WING
端子位置DUAL
晶体管应用AMPLIFIER
晶体管元件材料GALLIUM ARSENIDE
Base Number Matches1

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Ordering number : ENN7054A
SGF29
N-Channel GaAs MESFET
SGF29
For C to Ku-band Local Oscillator and Amplifier
Features
Package Dimensions
unit : mm
2134A
[SGF29]
0.5
1.9
0.95 0.95
0.4
4
3
0 to 0.1
1.5
2.5
Lowest phase noise.
The chip surface is covered with the highly reliable
protection film.
Super miniaturized plastic-mold package (CP4).
Automatic surface mounting is available.
0.16
1
2
0.5
0.6
0.95 0.85
2.9
1 : Gate
2 : Source
3 : Drain
4 : Source
SANYO : CP4
0.8
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VDS
VGS
ID
PD
Tj
Tstg
Conditions
Ratings
6
--5
100
200
150
--55 to +150
Unit
V
V
mA
mW
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Gate-to-Source Leakage Current
Saturated Drain Current
Gate-to-Source Cutoff Voltage
Forward Transfer Admittance
Symbol
IGSO
IDSS
VGS(off)
yfs
Conditions
VGS=--5V
VDS=3V, VGS=0
VDS=3V, ID=100µA
VDS=3V, ID=10mA
Ratings
min
30
--0.5
typ
50
--1.4
44
max
--10
70
--2.5
Unit
µA
mA
V
mS
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
11802 GI IM / 91001 GI IM No.7054-1/5
1.1

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