RSS120N03
Transistors
Switching (30V, 12A)
RSS120N03
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (SOP8).
External dimensions
(Unit : mm)
SOP8
5.0±0.2
(5)
(8)
6.0±0.3
3.9±0.15
Max.1.75
Applications
Power switching, DC / DC converter.
1.5±0.1
0.15
Structure
Silicon N-channel
MOS FET
1.27
0.4±0.1
0.1
Each lead has same dimensions
Absolute maximum ratings
(Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipatino
Channel temperature
Strage temperature
∗1
Pw≤10µs, Duty cycle≤1%
∗2
MOUNTED ON A CERAMIC BOARD
Equivalent circuit
Limits
30
20
±12
±48
1.6
6.4
2
150
−55
to
+150
Unit
V
V
A
A
A
A
W
°C
°C
(8)
(7)
(6)
(5)
(8) (7) (6) (5)
Continuous
Pulsed
Continuous
Pulsed
Symbol
V
DSS
V
GSS
I
D
I
DP
I
S
I
SP
P
D
Tch
Tstg
∗1
∗1
∗2
(1)
∗2
∗1
0.5±0.1
(1)
(4)
0.2±0.1
(1) (2) (3) (4)
(1)Source
(2)Source
(3)Source
(4)Gate
(5)Drain
(6)Drain
(7)Drain
(8)Drain
(2)
(3)
(4)
∗1
ESD PROTECTION DIODE
∗2
BODY DIODE
∗A
protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
Thermal resistance
(Ta=25°C)
Parameter
Channel to ambient
∗MOUNTED
ON A CERAMIC BOARD
Symbol
Rth (ch-a)
Limits
62.5
Unit
°C
/ W
∗
1/3
RSS120N03
Transistors
Electrical characteristics
(Ta=25°C)
Parameter
Symbol
I
GSS
Gate-source leakage
Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current
I
DSS
Gate threshold voltage
V
GS (th)
Static drain-source on-starte
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Tum-on delay time
Rise time
Tum-off delay time
Fall time
Total gate charge
Gate-source
charge
Gate-drain
charge
∗Pulsed
∗
R
DS (on)
Y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
Q
g
Q
gs
Q
gd
∗
∗
∗
∗
∗
∗
∗
∗
Min.
−
30
−
1.0
−
−
−
9.0
−
−
−
−
−
−
−
−
−
−
Typ.
−
−
−
−
7.1
9.4
10.2
−
1360
430
260
10
17
63
26
18
3.6
7.4
Max.
10
−
1
2.5
10.0
13.2
14.3
−
−
−
−
−
−
−
−
25
−
−
Unit
µA
V
µA
V
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Conditions
V
GS
=20V,
V
DS
=0V
I
D
=1mA,
V
GS
=0V
V
DS
=30V,
V
GS
=0V
V
DS
=10V,
I
D
=1mA
I
D
=12A,
V
GS
=10V
I
D
=12A,
V
GS
=4.5V
I
D
=12A,
V
GS
=4V
I
D
=12A,
V
DS
=10V
V
DS
=10V
V
GS
=0V
f=1MHz
I
D
=6A,
V
DD
15V
V
GS
=10V
R
L
=2.50Ω
R
GS
=10Ω
V
DD
15V
V
GS
=5V
I
D
=12A
Body diode characteristics
(Source-Drain Characteristics) (Ta=25°C)
Parameter
Forward voltage
∗Pulsed
Symbol
V
SD
∗
Min.
−
Typ.
−
Max.
1.2
Unit
V
Conditions
I
S
=6.4A,
V
GS
=0V
2/3
RSS120N03
Transistors
Electrical characteristic curves
10000
8
SWITCHING TIME : t (ns)
CAPACITANCE : C (pF)
t
f
1000
1000
C
iss
GATE-SOURCE VOLTAGE : V
GS
(V)
Ta=25°C
f=1MHz
V
CE
=0V
10000
Ta=25°C
V
DD
=15V
V
GS
=10V
R
G
=10Ω
Pulsed
Ta=25°C
7 V
DD
=15V
I
D
=12A
6 R
G
=10Ω
Pulsed
5
4
3
2
1
0
0
2
4
6
8
10
12 14
16 18
C
oss
100
t
d(off)
t
r
100
C
rss
10
t
d(on)
1
0.01
10
0.01
0.1
1
10
100
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : V
DS
(V)
DRAIN CURRENT : I
D
(A)
TOTAL GATE CHARGE : Qg (nC)
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
Fig.2 Switching Characteristics
Fig.3 Dynamic Input Characteristics
V
DS
=10V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=
−25°C
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
100
500
450
400
350
300
250
200
150
100
50
0
0
2
4
6
8
10
12
14
16
I
D
=12A
I
D
=6A
100
Ta=25°C
Pulsed
Ta=125°C
V
GS
=0V
Pulsed
DRAIN CURRENT : I
D
(A)
10
SOURCE CURRENT : I
s
(A)
10
Ta=75°C
Ta=25°C
Ta=
−25°C
1
1
0.1
0.1
0.01
0.001
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.01
0.0
0.5
1.0
1.5
GATE-SOURCE VOLTAGE : V
GS
(V)
GATE-SOURCE VOLTAGE : V
GS
(V)
SOURCE-DRAIN VOLTAGE : V
SD
(V)
Fig.4 Typical Transfer Characteristics
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
Fig.6 Source Current vs.
Source-Drain Voltage
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
V
GS
=10V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=
−25°C
V
GS
=4.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=
−25°C
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
1000
1000
1000
V
GS
=4V
Pulsed
100
100
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=
−25°C
10
10
10
1
0.1
1
10
100
1
0.1
1
10
100
1
0.1
1
10
100
DRAIN CURRENT : I
D
(A)
DRAIN CURRENT : I
D
(A)
DRAIN CURRENT : I
D
(A)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (Ι)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙ)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙΙ)
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0
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