IC ACT SERIES, QUAD 2-INPUT NAND GATE, CDIP14, CERAMIC, DIP-14, Gate
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 包装说明 | DIP, DIP14,.3 |
| Reach Compliance Code | unknown |
| 系列 | ACT |
| JESD-30 代码 | R-GDIP-T14 |
| 负载电容（CL） | 50 pF |
| 逻辑集成电路类型 | NAND GATE |
| 最大I（ol） | 0.024 A |
| 功能数量 | 4 |
| 输入次数 | 2 |
| 端子数量 | 14 |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 封装主体材料 | CERAMIC, GLASS-SEALED |
| 封装代码 | DIP |
| 封装等效代码 | DIP14,.3 |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 电源 | 5 V |
| Prop。Delay @ Nom-Sup | 9.5 ns |
| 传播延迟（tpd） | 8 ns |
| 认证状态 | Not Qualified |
| 施密特触发器 | NO |
| 筛选级别 | MIL-STD-883 |
| 座面最大高度 | 5.08 mm |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 宽度 | 7.62 mm |
| Base Number Matches | 1 |
| 5962-8769901MCA | 54ACT00MDA | 54ACT00MW8 | 5962R8769901BDA | 5962R8769901B2A | 5962-8769901MDA | 54ACT00MDS | 5962R8769901BCA | |
|---|---|---|---|---|---|---|---|---|
| 描述 | IC ACT SERIES, QUAD 2-INPUT NAND GATE, CDIP14, CERAMIC, DIP-14, Gate | IC ACT SERIES, QUAD 2-INPUT NAND GATE, UUC14, Gate | IC ACT SERIES, QUAD 2-INPUT NAND GATE, UUC14, Gate | IC ACT SERIES, QUAD 2-INPUT NAND GATE, CDFP14, CERPACK-14, Gate | IC ACT SERIES, QUAD 2-INPUT NAND GATE, CQCC20, CERAMIC, LCC-20, Gate | IC ACT SERIES, QUAD 2-INPUT NAND GATE, CDFP14, CERPACK-14, Gate | IC ACT SERIES, QUAD 2-INPUT NAND GATE, UUC14, Gate | IC ACT SERIES, QUAD 2-INPUT NAND GATE, CDIP14, CERAMIC, DIP-14, Gate |
| 包装说明 | DIP, DIP14,.3 | DIE, | DIE, | DFP, FL14,.3 | QCCN, LCC20,.35SQ | DFP, FL14,.3 | DIE, | DIP, DIP14,.3 |
| Reach Compliance Code | unknown | unknow | unknown | unknown | unknown | unknown | compliant | unknown |
| 系列 | ACT | ACT | ACT | ACT | ACT | ACT | ACT | ACT |
| JESD-30 代码 | R-GDIP-T14 | X-XUUC-N14 | X-XUUC-N14 | R-GDFP-F14 | S-CQCC-N20 | R-GDFP-F14 | X-XUUC-N14 | R-GDIP-T14 |
| 逻辑集成电路类型 | NAND GATE | NAND GATE | NAND GATE | NAND GATE | NAND GATE | NAND GATE | NAND GATE | NAND GATE |
| 功能数量 | 4 | 4 | 4 | 4 | 4 | 4 | 4 | 4 |
| 输入次数 | 2 | 2 | 2 | 2 | 2 | 2 | 2 | 2 |
| 端子数量 | 14 | 14 | 14 | 14 | 20 | 14 | 14 | 14 |
| 封装主体材料 | CERAMIC, GLASS-SEALED | UNSPECIFIED | UNSPECIFIED | CERAMIC, GLASS-SEALED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, GLASS-SEALED | UNSPECIFIED | CERAMIC, GLASS-SEALED |
| 封装代码 | DIP | DIE | DIE | DFP | QCCN | DFP | DIE | DIP |
| 封装形状 | RECTANGULAR | UNSPECIFIED | UNSPECIFIED | RECTANGULAR | SQUARE | RECTANGULAR | UNSPECIFIED | RECTANGULAR |
| 封装形式 | IN-LINE | UNCASED CHIP | UNCASED CHIP | FLATPACK | CHIP CARRIER | FLATPACK | UNCASED CHIP | IN-LINE |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | YES | YES | YES | YES | YES | YES | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 端子形式 | THROUGH-HOLE | NO LEAD | NO LEAD | FLAT | NO LEAD | FLAT | NO LEAD | THROUGH-HOLE |
| 端子位置 | DUAL | UPPER | UPPER | DUAL | QUAD | DUAL | UPPER | DUAL |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 是否Rohs认证 | 不符合 | - | - | 不符合 | 不符合 | 不符合 | 符合 | 不符合 |
| 负载电容（CL） | 50 pF | - | - | 50 pF | 50 pF | 50 pF | - | 50 pF |
| 最大I（ol） | 0.024 A | - | - | 0.024 A | 0.024 A | 0.024 A | - | 0.024 A |
| 最高工作温度 | 125 °C | - | - | 125 °C | 125 °C | 125 °C | - | 125 °C |
| 最低工作温度 | -55 °C | - | - | -55 °C | -55 °C | -55 °C | - | -55 °C |
| 封装等效代码 | DIP14,.3 | - | - | FL14,.3 | LCC20,.35SQ | FL14,.3 | - | DIP14,.3 |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | - | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 260 | NOT SPECIFIED |
| 电源 | 5 V | - | - | 5 V | 5 V | 5 V | - | 5 V |
| Prop。Delay @ Nom-Sup | 9.5 ns | - | - | 9 ns | 9 ns | 9.5 ns | - | 9 ns |
| 传播延迟（tpd） | 8 ns | - | - | 8 ns | 8 ns | 8 ns | - | 8 ns |
| 施密特触发器 | NO | - | - | NO | NO | NO | - | NO |
| 筛选级别 | MIL-STD-883 | - | - | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | MIL-STD-883 | - | 38535Q/M;38534H;883B |
| 座面最大高度 | 5.08 mm | - | - | 2.032 mm | 1.905 mm | 2.032 mm | - | 5.08 mm |
| 温度等级 | MILITARY | - | - | MILITARY | MILITARY | MILITARY | - | MILITARY |
| 端子节距 | 2.54 mm | - | - | 1.27 mm | 1.27 mm | 1.27 mm | - | 2.54 mm |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | - | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 宽度 | 7.62 mm | - | - | 6.2865 mm | 8.89 mm | 6.35 mm | - | 7.62 mm |
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