PD - 95512
IRFP3415PbF
HEXFET
®
Power MOSFET
l
l
l
l
l
l
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
D
V
DSS
= 150V
G
S
R
DS(on)
= 0.042Ω
I
D
= 43A
Description
Fifth Generation HEXFET
®
Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-
industrial applications where higher power levels
preclude the use of TO-220 devices. The TO-247 is
similar but superior to the earlier TO-218 package
because of its isolated mounting hole.
TO-247AC
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
43
30
150
200
1.3
± 20
590
22
20
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.24
–––
Max.
0.75
–––
40
Units
°C/W
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1
07/15/04
IRFP3415PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
150
––– –––
V
V
GS
= 0V, I
D
= 250µA
––– 0.17 ––– V/°C Reference to 25°C, I
D
= 1mA
–––
––– 0.042
Ω
V
GS
= 10V, I
D
= 22A
2.0
––– 4.0
V
V
DS
= V
GS
, I
D
= 250µA
19
––– –––
S
V
DS
= 50V, I
D
= 22A
–––
–––
25
V
DS
= 150V, V
GS
= 0V
µA
–––
––– 250
V
DS
= 120V, V
GS
= 0V, T
J
= 150°C
–––
––– 100
V
GS
= 20V
nA
–––
––– -100
V
GS
= -20V
–––
––– 200
I
D
= 22A
–––
–––
17
nC
V
DS
= 120V
–––
–––
98
V
GS
= 10V, See Fig. 6 and 13
–––
12
–––
V
DD
= 75V
–––
55
–––
I
D
= 22A
ns
–––
71
–––
R
G
= 2.5Ω
–––
69
–––
R
D
= 3.3Ω, See Fig. 10
D
Between lead,
4.5 –––
–––
6mm (0.25in.)
nH
G
from package
7.5
and center of die contact
S
––– 2400 –––
V
GS
= 0V
–––
640 –––
pF
V
DS
= 25V
–––
340 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
260
2.2
43
150
1.3
390
3.3
V
ns
µC
A
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 22A, V
GS
= 0V
T
J
= 25°C, I
F
= 22A
di/dt = 100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤
22A, di/dt
≤
820A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
V
DD
= 25V, starting T
J
= 25°C, L = 2.4mH
R
G
= 25Ω, I
AS
= 22A. (See Figure 12)
Pulse width
≤
300µs; duty cycle
≤
2%.
2
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IRFP3415PbF
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.5V
5.0V
BOTTOM 4.5V
1000
I
D
, Drain-to-Source Current (A)
I
D
, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.5V
5.0V
BOTTOM 4.5V
TOP
100
100
4.5V
20us PULSE WIDTH
T
J
= 25
o
C
1
10
100
4.5V
20us PULSE WIDTH
T
J
= 175
o
C
1
10
100
10
10
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
3.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 37A
I
D
, Drain-to-Source Current (A)
2.5
2.0
T
J
= 25
°
C
100
T
J
= 175
°
C
1.5
1.0
0.5
10
4
5
6
7
V DS = 50V
20µs PULSE WIDTH
8
9
10
0.0
-60 -40 -20 0
V
GS
= 10V
20 40 60 80 100 120 140 160 180
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
o
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRFP3415PbF
6000
5000
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= 22A
V
DS
= 120V
V
DS
= 75V
V
DS
= 30V
16
C, Capacitance (pF)
4000
Ciss
3000
12
8
2000
Coss
Crss
1000
4
0
1
10
100
0
0
40
80
FOR TEST CIRCUIT
SEE FIGURE 13
120
160
200
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
I
D
, Drain Current (A)
100
100
10us
T
J
= 175
o
C
10
100us
T
J
= 25
o
C
1
10
1ms
0.1
0.2
V
GS
= 0 V
0.6
1.0
1.4
1.8
1
T
C
= 25
o
C
T
J
= 175
o
C
Single Pulse
1
10
100
10ms
1000
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRFP3415PbF
50
V
DS
V
GS
R
D
40
I
D
, Drain Current (A)
R
G
10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
D.U.T.
+
-
V
DD
30
20
Fig 10a.
Switching Time Test Circuit
10
V
DS
90%
0
25
50
75
100
125
150
175
T
C
, Case Temperature ( °C)
10%
V
GS
Fig 9.
Maximum Drain Current Vs.
Case Temperature
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
1
Thermal Response (Z
thJC
)
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
P
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
t
2
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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