Advanced Power MOSFET
FEATURES
IRFM120A
BV
DSS
= 100 V
R
DS(on)
= 0.2
!
I
D
= 2.3 A
SOT-223
2
IEEE802.3af Compatible
!
Avalanche Rugged Technology
!
Rugged Gate Oxide Technology
!
Lower Input Capacitance
!
Improved Gate Charge
!
Extended Safe Operating Area
!
Lower Leakage Current : 10
#A
(Max.) @ V
DS
= 100V
!
Lower R
DS(ON)
: 0.155
!
(Typ.)
1
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T
A
=25%)
Continuous Drain Current (T
A
=70%)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
A
=25%) *
Linear Derating Factor *
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
'
&
&
(
&
Value
100
2.3
1.84
18
"20
123
2.3
0.24
6.5
2.4
0.019
- 55 to +150
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/%
%
300
Thermal Resistance
Symbol
R
$JA
Characteristic
Junction-to-Ambient *
Typ.
--
Max.
52
Units
%/W
*
When mounted on the minimum pad size recommended (PCB Mount).
Rev. C
IRFM120A
Electrical Characteristics
(T
A
=25% unless otherwise specified)
Symbol
BV
DSS
.BV/.T
J
V
GS(th)
I
GSS
Characteristic
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Min. Typ. Max. Units
100
--
2.0
--
--
--
I
DSS
--
--
Static Drain-Source
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
--
--
--
--
--
--
--
--
--
--
--
--
--
0.12
--
--
--
--
--
--
--
3.12
370
95
38
14
14
36
28
16
2.7
7.8
--
--
4.0
100
-100
1
10
100
0.2
--
480
110
45
40
40
90
70
22
--
--
nC
ns
pF
)
S
#A
V
V/%
V
nA
N-CHANNEL
POWER MOSFET
Test Condition
V
GS
=0V,I
D
=250#A
I
D
=250#A
V
GS
=20V
V
GS
=-20V
V
DS
=30V
V
DS
=100V
V
DS
=80V,T
A
=125%
V
GS
=10V,I
D
=1.15A
V
DS
=40V,I
D
=1.15A
+
+
-
See Fig 7
V
DS
=5V,I
D
=250#A
V
GS
=0V,V
DS
=25V,f =1MHz
See Fig 5
V
DD
=50V,I
D
=9.2A,
R
G
=18)
See Fig 13
V
DS
=80V,V
GS
=10V,
I
D
=9.2A
See Fig 6 & Fig 12
+ ,
+,
Source-Drain Diode Ratings and Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
&
+
Min. Typ. Max. Units
--
--
--
--
--
--
--
--
98
0.34
2.3
18
1.5
--
--
A
V
ns
#C
Test Condition
Integral reverse pn-diode
in the MOSFET
T
J
=25%,I
S
=2.3A,V
GS
=0V
T
J
=25%,I
F
=9.2A
di
F
/dt=100A/#s
+
Notes ;
&
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
'
L=35mH, I
AS
=2.3A, V
DD
=25V, R
G
=27
)
, Starting T
J
=25%
(
I
SD
*9.2A,
di/dt*300A/#s, V
DD
*BV
DSS
, Starting T
J
=25%
+
Pulse Test : Pulse Width = 250#s, Duty Cycle
*
2%
,
Essentially Independent of Operating Temperature
-
Adjusted for Cisco
N-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics
V
GS
Top :
15V
10 V
8.0 V
7.0 V
6.0 V
5.5V
5.0 V
Bottom : 4.5V
IRFM120A
Fig 2. Transfer Characteristics
I
D
, Drain Current [A]
I
D
, Drain Current [A]
1
1
0
1
1
0
1 0
o
C
5
1
0
0
2
o
C
5
@Nts:
oe
1 V =0V
.
GS
2 V =4 V
.
DS
0
3 20
"
PleTs
. 5 s us et
6
8
1
0
1
0
0
@Nts:
oe
1 20
"
PleTs
. 5 s us et
2 T = 2
o
C
.
A
5
1
-1
0
1
0
0
1
1
0
- 5
o
C
5
1
-1
0
2
4
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
04
.
Fig 4. Source-Drain Diode Forward Voltage
I
DR
, Reverse Drain Current [A]
R
DS(on)
, [
#
]
Drain-Source On-Resistance
03
.
V =1 V
0
GS
1
1
0
02
.
1
0
0
01
.
V =2 V
0
GS
1 0
o
C
5
2
o
C
5
1
-1
0
04
.
06
.
08
.
10
.
12
.
14
.
@ N t : T = 2
o
C
oe
J
5
00
.
0
1
0
2
0
3
0
4
0
@Nts:
oe
1 V =0V
.
GS
2 20
"
PleTs
. 5 s us et
16
.
18
.
20
.
22
.
I
D
, Drain Current [A]
V
SD
, Source-Drain Voltage [V]
Fig 5. Capacitance vs. Drain-Source Voltage
60
0
C
iss
C =C +C (C =sotd)
iss gs gd
ds
h r e
C =C +C
oss ds gd
C =C
rss gd
Fig 6. Gate Charge vs. Gate-Source Voltage
V =2 V
0
DS
1
0
V
GS
, Gate-Source Voltage [V]
V =5 V
0
DS
V =8 V
0
DS
Capacitance [pF]
40
0
C
oss
20
0
C
rss
@Nts:
oe
1 V =0V
.
GS
2 f=1Mz
.
H
5
@Nts:I =92A
oe
.
D
0
0
5
1
0
1
5
2
0
0
0
1
0
1
1
0
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
IRFM120A
Fig 7. Breakdown Voltage vs. Temperature
12
.
30
.
N-CHANNEL
POWER MOSFET
Fig 8. On-Resistance vs. Temperature
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
11
.
R
DS(on)
, (Normalized)
Drain-Source On-Resistance
25
.
20
.
10
.
15
.
10
.
@Nts:
oe
1 V =1 V
.
GS
0
2 I =46A
.
D
.
-0
5
-5
2
0
2
5
5
0
7
5
10
0
15
2
10
5
15
7
09
.
@Nts:
oe
1 V =0V
.
GS
2 I =20
"
.
D
5 A
-0
5
-5
2
0
2
5
5
0
7
5
10
0
15
2
10
5
15
7
05
.
08
.
-5
7
00
.
-5
7
T
J
, Junction Temperature [
o
C]
T
J
, Junction Temperature [
o
C]
Fig 9. Max. Safe Operating Area
1
2
0
Oeaini Ti Ae
prto n hs ra
i L m t d b R
DS(on)
s iie y
10
"
0 s
1m
s
1 m
0 s
10m
0 s
D
C
@Nts:
oe
1 T = 2
o
C
.
A
5
2 T = 1 0
o
C
.
J
5
3 Snl Ple
. ige us
1
-2 -1
0
1
0
1
0
0
1
1
0
1
2
0
1
"
0 s
Fig 10. Max. Drain Current vs. Ambient Temperature
25
.
I
D
, Drain Current [A]
1
1
0
I
D
, Drain Current [A]
20
.
15
.
1
0
0
10
.
1
-1
0
05
.
00
.
2
5
5
0
7
5
10
0
15
2
10
5
V
DS
, Drain-Source Voltage [V]
T
A
, Ambient Temperature [
o
C]
Fig 11. Thermal Response
Thermal Response
10
2
D=0.5
10
1
0.2
0.1
0.05
10
0
0.02
0.01
@ Notes :
1. Z
!
A
(t)=52
o
C/W Max.
J
2. Duty Factor, D=t
1
/t
2
3. T
J M
-T
A
=P
D M
*Z
!
A
(t)
J
P
DM
t
1
t
2
Z
JA
(t) ,
!
single pulse
10
-1
10
- 5
10
- 4
10
- 3
10
- 2
10
- 1
10
0
10
1
10
2
10
3
t
1
, Square Wave Pulse Duration
[sec]
N-CHANNEL
POWER MOSFET
Fig 12. Gate Charge Test Circuit & Waveform
IRFM120A
* Current Regulator ”
50K!
12V
200nF
300nF
Same Type
as DUT
V
GS
Q
g
10V
V
DS
V
GS
DUT
3mA
Q
gs
Q
gd
R
1
Current Sampling (I
G
)
Resistor
R
2
Current Sampling (I
D
)
Resistor
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
R
L
V
out
V
in
R
G
DUT
V
in
10V
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
10%
V
out
V
DD
( 0.5 rated V
DS
)
90%
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
L
L
V
DS
Vary t
p
to obtain
required peak I
D
BV
DSS
1
E
AS
= ---- L
L
I
AS2
--------------------
2
BV
DSS
-- V
DD
BV
DSS
I
AS
C
V
DD
V
DD
t
p
I
D
R
G
DUT
10V
t
p
I
D
(t)
V
DS
(t)
Time
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