CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
I
D(ON)
I
GSS
r
DS(ON)
g
fs
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
L
D
Measured from the Drain
Lead, 5.0mm (0.2in) from
Header to Center of Die
Measured from the Source
Lead, 5.0mm (0.2in) from
Header to Source Bonding
Pad
Modified MOSFET
Symbol Showing the
Internal Device
Inductances
D
L
D
G
L
S
S
TEST CONDITIONS
V
GS
= 0V, I
D
= 250µA (Figure 10)
V
GS
= V
DS
, I
D
= 250µA
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 100V, V
GS
= 0V, T
J
= 125
o
C
V
DS
> I
D(ON)
x r
DS(ON)MAX
, V
GS
= 10V
V
GS
=
±20V
V
GS
= 10V, I
D
= 1.5A (Figures 8, 9)
V
DS
> I
D(ON)
x r
DS(ON)MAX
, I
D
= 1.5A (Figure 12)
V
DD
≅
0.5 x Rated BV
DSS
, I
D
≈
3.5A, R
G
= 9.1Ω
V
GS
= 10V, R
L
= 13Ω (Figures 17, 18),
R
L
= 14Ω for V
DS
= 50V, R
L
= 23Ω for V
DS
= 80V,
MOSFET Switching Times are Essentially
Independent of Operating Temperature
V
GS
= 10V, I
D
= 3.5A, V
DS
= 0.8 x Rated BV
DSS
,
I
G(REF)
= 1.5mA (Figures 14, 19, 20), Gate Charge is
Essentially Independent of Operating Temperature
MIN
100
2.0
-
-
3.5
-
-
1.0
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
0.5
1.5
10
15
15
10
5.0
2.0
3.0
135
80
20
5.0
MAX
-
4.0
25
250
-
±100
0.600
-
20
25
25
20
7.5
-
-
-
-
-
-
UNITS
V
V
µA
µA
A
nA
Ω
S
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
nH
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
V
DS
= 25V, V
GS
= 0V, f = 1MHz (Figure 11)
-
-
-
-
Internal Source Inductance
L
S
-
15
-
nH
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
R
θJC
R
θJA
Free Air Operation
-
-
-
-
8.33
175
o
C/W
o
C/W
2
IRFF110
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current (Note 3)
SYMBOL
I
SD
I
SM
TEST CONDITIONS
Modified MOSFET Symbol
Showing the Integral
Reverse P-N Junction
Rectifier
G
D
MIN
-
-
TYP
-
-
MAX
3.5
14
UNITS
A
A
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
NOTES:
V
SD
t
rr
Q
RR
t
ON
S
o
C, I
T
J
= 25
SD
= 3.5A, V
GS
= 0V (Figure 13)
T
J
= 150
o
C, I
SD
= 3.5A, dI
SD
/dt = 100A/µs
T
J
= 150
o
C, I
SD
= 3.5A, dI
SD
/dt = 100A/µs
-
-
-
-
-
200
1.0
-
2.5
-
-
-
V
ns
µC
-
Intrinsic Turn-On Time is Negligible. Turn-On
Speed is Substantially Controlled by L
S
+ L
D
2. Pulse test: pulse width
≤
300µs, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 5V, starting T
J
= 25
o
C, L = 2.3mH, R
G
= 25Ω, peak I
AS
= 3.5A. See Figures 15, 16.
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
1.0
Unless Otherwise Specified
5
0.8
0.6
0.4
0.2
0
I
D
, DRAIN CURRENT (A)
4
3
2
1
0
50
100
150
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
2
1
Z
θJC
, NORMALIZED
THERMAL IMPEDENCE
0.5
0.2
0.1
0.1
0.05
0.02
0.01
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
P
DM
t
1
t
2
SINGLE PULSE
10
-4
10
-3
10
-2
10
-1
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
x R
θJC
+ T
C
1
10
0.01
10
-5
t
1
, RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
嵌入式系统
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