8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
8 A, 500 V, 0.85 ohm, N沟道, 硅, POWER, 场效应管, TO-220AB
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | International Rectifier ( Infineon ) |
| 包装说明 | FLANGE MOUNT, R-PSFM-T3 |
| Reach Compliance Code | unknown |
| 外壳连接 | DRAIN |
| 配置 | SINGLE |
| 最小漏源击穿电压 | 450 V |
| 最大漏极电流 (Abs) (ID) | 8 A |
| 最大漏极电流 (ID) | 8 A |
| 最大漏源导通电阻 | 0.85 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-220AB |
| JESD-30 代码 | R-PSFM-T3 |
| JESD-609代码 | e0 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | FLANGE MOUNT |
| 极性/信道类型 | N-CHANNEL |
| 最大功率耗散 (Abs) | 125 W |
| 最大脉冲漏极电流 (IDM) | 32 A |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | SINGLE |
| 晶体管元件材料 | SILICON |
| Base Number Matches | 1 |
| IRF841 | IRF8401111 | IRF842 | IRF843 | |
|---|---|---|---|---|
| 描述 | 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 元件数量 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 |
| 端子形式 | THROUGH-HOLE | THROUGH-孔 | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | SINGLE | 单一的 | SINGLE | SINGLE |
| 晶体管元件材料 | SILICON | 硅 | SILICON | SILICON |
| 是否Rohs认证 | 不符合 | - | 不符合 | 不符合 |
| 厂商名称 | International Rectifier ( Infineon ) | - | International Rectifier ( Infineon ) | International Rectifier ( Infineon ) |
| 包装说明 | FLANGE MOUNT, R-PSFM-T3 | - | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
| Reach Compliance Code | unknown | - | unknow | unknow |
| 外壳连接 | DRAIN | - | DRAIN | DRAIN |
| 配置 | SINGLE | - | SINGLE | SINGLE |
| 最小漏源击穿电压 | 450 V | - | 500 V | 450 V |
| 最大漏极电流 (Abs) (ID) | 8 A | - | 7 A | 7 A |
| 最大漏极电流 (ID) | 8 A | - | 7 A | 7 A |
| 最大漏源导通电阻 | 0.85 Ω | - | 1.1 Ω | 1.1 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-220AB | - | TO-220AB | TO-220AB |
| JESD-30 代码 | R-PSFM-T3 | - | R-PSFM-T3 | R-PSFM-T3 |
| JESD-609代码 | e0 | - | e0 | e0 |
| 工作模式 | ENHANCEMENT MODE | - | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C | - | 150 °C | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | - | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLANGE MOUNT | - | FLANGE MOUNT | FLANGE MOUNT |
| 极性/信道类型 | N-CHANNEL | - | N-CHANNEL | N-CHANNEL |
| 最大功率耗散 (Abs) | 125 W | - | 125 W | 125 W |
| 最大脉冲漏极电流 (IDM) | 32 A | - | 28 A | 28 A |
| 认证状态 | Not Qualified | - | Not Qualified | Not Qualified |
| 表面贴装 | NO | - | NO | NO |
| 端子面层 | Tin/Lead (Sn/Pb) | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
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