Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . E
AS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . T
J,
T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . T
pkg
250
250
2.0
1.3
8.0
±20
20
0.16
61
-55 to 150
300
260
UNITS
V
V
A
A
A
V
W
W/
o
C
mJ
o
C
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
TEST CONDITIONS
V
GS
= 0V, I
D
= 250µA, (Figure 10)
V
GS
= V
DS
, I
D
= 250µA
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V
T
J
= 125
o
C
MIN
250
2.0
-
-
TYP
-
-
-
-
MAX
-
4.0
25
250
UNITS
V
V
µA
µA
A
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
I
D(ON)
I
GSS
r
DS(ON)
g
fs
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
V
DS
> I
D(ON)
x r
DS(ON)MAX
, V
GS
= 10V,
(Figure 7)
V
GS
=
±20V
V
GS
= 10V, I
D
= 2.5A, (Figures 8, 9)
V
DS
> I
D(ON)
x r
DS(ON)MAX
, I
D
= 2.5A,
(Figure 12)
V
DD
= 0.5 x Raterd BV
DSS
, I
D
≈
2.0A, R
L
= 61Ω
V
GS
= 10V, (Figures 17, 18)
MOSFET Switching Times are Essentially Inde-
pendent of Operating Temperature
2.0
-
-
±100
2.0
-
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
-
-
0.8
-
1.6
1.2
nA
A
S
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-
-
-
-
8.9
12
18
8.9
9.6
13
18
27
15
14.4
ns
ns
ns
ns
nC
V
GS
= 10V, I
D
= 2.0A, V
DS
= 0.8 x Rated BV
DSS
I
G(REF)
= 1.5mA (Figures 14, 19, 20) Gate
Charge is Essentially Independent of Operating
Temperature
-
-
-
2.4
4.5
180
53
14
3.6
6.7
-
-
-
nC
nC
pF
pF
pF
V
DS
= 25V, V
GS
= 0V, f = 1MHz, (Figure 11)
-
-
-
2
IRF614
Electrical Specifications
PARAMETER
Internal Drain Inductance
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
SYMBOL
L
D
TEST CONDITIONS
Measured From the
Drain Lead, 6mm
(0.25in) From Package
to Center of Die
Measured From the
Source Lead, 6mm
(0.25in) from Header to
Source Bonding Pad
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
D
L
D
G
L
S
S
MIN
-
TYP
4.5
MAX
-
UNITS
nH
Internal Source Inductance
L
S
-
7.5
-
nH
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
R
θJC
R
θJA
Free Air Operation
-
-
-
-
6.4
62.5
o
C/W
o
C/W
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
SYMBOL
I
SD
I
SDM
TEST CONDITIONS
Modified MOSFET Sym-
bol Showing the Integral
Reverse P-N Junction
Rectifier
G
D
MIN
-
-
TYP
-
-
MAX
2.0
8.0
UNITS
A
A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
NOTES:
V
SD
t
rr
Q
RR
T
J
= 25
o
C, I
SD
= 2.0A, V
GS
= 0V, (Figure 13)
T
J
= 25
o
C, I
SD
= 2.0A, dI
SD
/dt = 100A/µs
T
J
= 25
o
C, I
SD
= 2.0A, dI
SD
/dt = 100A/µs
-
67
0.24
-
-
0.54
2.0
340
1.2
V
ns
µC
2. Pulse test: pulse width
≤
300µs, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
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