RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FMD1S
THRU
FMD7S
SINGLE-PHASE GLASS PASSIVATED
MINI FAST RECOVERY SURFACE MOUNT BRIDGE RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 0.8 Ampere
FEATURES
*
*
*
*
*
*
*
Surge overload rating - 30 amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
Glass passivated device
Polarity symbols molded on body
Mounting position: Any
Weight: 0.5 gram
MD-S
1
2
3
4
MECHANICAL DATA
* Epoxy : Device has UL flammability classification 94V-0
0.028(0.9)
0.020(0.5)
0.108(2.74)
0.092(2.34)
0.193(4.9)
0.177(4.5)
2.756(7.0)
0.260(6.6)
0.157(4.0)
0.157(4.0)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
o
0.106(2.7)
0.091(2.3)
0.193(4.9)
0.177(4.5)
0.014(0.35)
0.006(0.15)
Dimensions in millimeters
MAXIMUM RATINGS
(At T
A
= 25
o
C unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Output Rectified
Current TA = 30
o
C
-on glass-epoxy P.C.B. ( NOTE 1 )
-on aluminum substrate ( NOTE 2 )
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance ( Note3 )
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS
(At T
A
= 25 C unless otherwise noted)
CHARACTERISTICS
Maximum Forward Voltage Drop per Bridge
Element at 0.4A DC
Maximum Reverse Current at rated
DC Blocking Voltage per element
Maximum Reverse Recovery Time ( Note 4 )
@T
A
= 25 C
@T
A
= 125 C
o
o
o
SYMBOL
V
RRM
V
RMS
V
DC
I
O
FMD1S
50
35
50
FMD2S
100
70
100
FMD3S
200
140
200
FMD4S
400
280
400
0.5
0.8
FMD5S
600
420
600
FMD6S
800
560
800
0.145(3.6)
FMD7S
1000
700
1000
UNITS
Volts
Volts
Volts
Amp
I
FSM
C
J
T
J,
T
STG
SYMBOL
V
F
FMD1S
FMD2S
30
15
-55 to + 150
FMD3S
FMD4S
1.30
10
FMD5S
FMD6S
FMD7S
Amps
pF
0
C
UNITS
Volts
uAmps
uAmps
I
R
trr
150
100
250
500
nSec
2001-4
NOTE: 1. On glass-epoxy P.C.B. mounted on 0.05 X 0.05” (1.3 X 1.3mm) pads.
2. On aluminum substrate P.C.B. with an area of 0.8 X 0.8 X 0.25” (20 X 20 X 6.4mm) mounted on 0.05 X 0.05” (1.27 X 1.27mm) solder pad.
3. Measured at 1MHz and applied reverse voltage of 4.0 volts.
4. Test Conditions: I
F
= 0.5A, I
R
= -1.0A, I
RR
= -0.25A.
5. Suffix “-S” Surface Mount for Mini Dip Bridge.
0.152(3.6)
M D
.004(0.10) MAX.
RATING AND CHARACTERISTIC CURVES ( FMD1S THRU FMD7S )
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
NONINDUCTIVE
10
NONINDUCTIVE
trr
+0.5A
(+)
25 Vdc
(approx)
(-)
D.U.T
(-)
PULSE
GENERATOR
(NOTE 2)
1
NON-
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
(+)
0
-0.25A
NOTES:
1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
-1.0A
1cm
SET TIME BASE FOR
50/100 ns/cm
1.2
1.0
.8
.6
.4
.2
0
0
30
60
90
120 150 180
AMBIENT TEMPERATURE, ( )
on glass
-epoxy substrate
INSTANTANEOUS FORWARD CURRENT, (A)
FIG. 1 - TYPICAL FORWARD
CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT, (A)
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
10
1.0
TJ = 150
.1
TJ = 25
Pulse Width = 300us
1% Duty Cycle
.01
.2
.4
.6
.8
1.0 1.2 1.4
INSTANTANEOUS FORWARD VOLTAGE, (V)
PEAK FORWARD SURGE CURRENT, (A)
FIG. 4 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE, (pF)
FIG. 3 - MAXIMUM NON-REPETITIVE
FORWARD SURGE CURRENT
50
40
30
20
10
8.3ms Single Half Sine-Wave
(JEDED Method)
200
100
60
40
20
10
6
4
2
1
.1
.2 .4
1.0 2 4 10 20 40 100
REVERSE VOLTAGE, ( V )
TJ = 25
0
1
2
4 6 8 10 20 40 6080100
NUMBER OF CYCLES AT 60Hz
RECTRON