IRF522概述

9.2 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220

9.2 A, 100 V, 0.27 ohm, N沟道, 硅, POWER, 场效应管, TO-220

IRF522规格参数

	IRF522	IRF520	IRF521	IRF523
描述	9.2 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220	9.2 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220	9.2 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220	9.2 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
端子数量	3	3	3	3
最小击穿电压	100 V	100 V	100 V	100 V
加工封装描述	TO-220, 3 PIN	TO-220, 3 PIN	TO-220, 3 PIN	TO-220, 3 PIN
状态	TRANSFERRED	TRANSFERRED	TRANSFERRED	TRANSFERRED
包装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
包装尺寸	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
端子形式	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
端子位置	SINGLE	SINGLE	SINGLE	SINGLE
包装材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
结构	SINGLE	SINGLE	SINGLE	SINGLE
元件数量	1	1	1	1
晶体管元件材料	SILICON	SILICON	SILICON	SILICON
通道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
场效应晶体管技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
操作模式	ENHANCEMENT	ENHANCEMENT	ENHANCEMENT	ENHANCEMENT
晶体管类型	GENERAL PURPOSE POWER	GENERAL PURPOSE POWER	GENERAL PURPOSE POWER	GENERAL PURPOSE POWER
最大漏电流	9.2 A	9.2 A	9.2 A	9.2 A
最大漏极导通电阻	0.2700 ohm	0.2700 ohm	0.2700 ohm	0.2700 ohm

器件捷径: L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ