LOW POWER CONSUMPTION
SILICON MMIC AMPLIFIER
FEATURES
• LOW POWER CONSUMPTION:
15 mW (V
CC
= 3.4 V, I
CC
= 4.5 mA)
• HIGH POWER GAIN:
20 dB (UPC2715T)
• WIDE FREQUENCY RESPONSE:
2 GHz (UPC2714T)
• INTERNAL CURRENT REGULATION MINIMIZES GAIN
CHANGE OVER TEMPERATURE
• SUPER SMALL PACKAGE
•
TAPE AND REEL PACKAGING OPTION AVAILABLE
0
0
0.5
1.0
15
UPC2714T
UPC2715T
GAIN vs. FREQUENCY
20
UPC2715
Gain, G
S
(dB)
10
UPC2714
5
1.5
2.0
Frequency, f (GHz)
DESCRIPTION
The UPC2714T and UPC2715T are Silicon Monolithic inte-
grated circuits manufactured using the NESAT III process.
These devices are suitable for applications which require low
power consumption and wide frequency operation. They are
designed for low cost, low power consumption gain stages in
cellular radios, GPS receivers, and PCN applications.
NEC's stringent quality assurance and test procedures en-
sure the highest reliability and performance.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C, f = 0.5 GHz, V
CC
= 3.4 V)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CC
G
S
f
U
∆G
S
P
SAT
NF
RL
IN
RL
OUT
ISOL
∆G
T
R
TH
PARAMETERS AND CONDITIONS
Circuit Current
Small Signal Gain
Upper Limit Operating Frequency
(The gain at f
U
is 3 dB down from the gain at 0.1 GHz)
Gain Flatness, f = 0.1~ 0.6 GHz
Saturated Output Power
Noise Figure
Input Return Loss
Output Return Loss
Isolation
Gain-Temperature Coefficient
Thermal Resistance (Junction to Ambient)
UNITS
mA
dB
GHz
dB
dBm
dB
dB
dB
dB
dB/°C
°C/W
10
5
22
-10
MIN
3.3
8.5
1.4
UPC2714T
T06
TYP
4.5
11.5
1.8
±1.0
-7
5.0
13
8
27
+0.006
200
6.5
12
5
28
-9
MAX
5.7
15.5
MIN
3.3
16
0.9
UPC2715T
T06
TYP
4.5
19
1.2
±1.0
-6
4.5
17
8
33
+0.006
200
6.0
MAX
5.7
23
California Eastern Laboratories
UPC2714T, UPC2715T
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25°C)
SYMBOLS
V
CC
P
IN
P
T
T
OP
T
STG
PARAMETERS
Supply Voltage
Input Power
Total Power Dissipation
2
Operating Temperature
Storage Temperature
UNITS
V
dBm
mW
°C
°C
RATINGS
4.0
-5
200
-40 to +85
-55 to +150
RECOMMENDED
OPERATING CONDITIONS
SYMBOL
V
CC
PARAMETER
Supply Voltage
UNITS
V
MIN
3.06
TYP MAX
3.4
3.74
Notes:
1. Operation in excess of any one of these parameters may result in
permanent damage.
2. Mounted on 50 x 50 x 1.6 mm epoxy glass PWB (T
A
= 85°C).
TYPICAL PERFORMANCE CURVES
(TA = 25°C)
UPC2714T/UPC2715T
CIRCUIT CURRENT vs. VOLTAGE
10
9
UPC2714T/UPC2715T
CIRCUIT CURRENT vs. TEMPERATURE
10
V
CC
= 3.4V
Circuit Current, I
CC
(mA)
Circuit Current, I
CC
(mA)
8
7
6
5
4
3
2
1
0
0
1
2
3
4
5
8
6
4
2
-40
0
40
80
Supply Voltage, V
CC
(V)
Temperature, T
OP
(°C)
UPC2714T
GAIN AND NOISE FIGURE vs. FREQUENCY
30
UPC2715T
GAIN AND NOISE FIGURE vs. FREQUENCY
25
V
CC
= 3.74 V
20
6
V
CC
= 3.4 V
15
V
CC
= 3.06 V
V
CC
= 3.06 V
10
5
Gain, GS (dB)
Gp
10
V
CC
= 3.06V
9
7
5
V
CC
= 3.4V
V
CC
= 3.06V
3
1
V
CC
= 3.74V
NF
0
Gain, GS (dB)
V
CC
= 3.74V
5
V
CC
= 3.74 V
V
CC
= 3.4 V
0
0.1
0.3
1.0
2.0
4
-10
0.1
0.3
1.0
2.0
Frequency, f (GHz)
Frequency, f (GHz)
Noise Figure, NF (dB)
V
CC
= 3.4V
Noise Figure, NF (dB)
20
UPC2714T, UPC2715T
TYPICAL PERFORMANCE CURVES
(T
A
= 25°C, V
CC
= 3.4 V)
UPC2714T
INPUT RETURN LOSS AND
OUTPUT RETURN LOSS vs. FREQUENCY
Input Return Loss, RL
IN
(dB)
Output Return Loss, RL
OUT
(dB)
Input Return Loss, RL
IN
(dB)
Output Return Loss, RL
OUT
(dB)
0
UPC2715T
INPUT RETURN LOSS AND
OUTPUT RETURN LOSS vs. FREQUENCY
10
RL
out
-10
0
RLin
-10
-20
RL
in
-20
RLout
-30
-30
-40
0.1
0.3
1.0
2.0
-40
0.1
0.3
1.0
2.0
Frequency, f (GHz)
Frequency, f (GHz)
UPC2714T
ISOLATION vs. FREQUENCY
-10
UPC2715T
ISOLATION vs. FREQUENCY
0
Isolation, ISOL (dB)
-20
Isolation, ISOL (dB)
0.1
0.3
1.0
2.0
-10
-20
-30
-30
-
40
-40
0.1
0.3
1.0
2.0
Frequency, f (GHz)
Frequency, f (GHz)
UPC2714T
POWER vs. FREQUENCY
5
5
UPC2715T
POWER vs. FREQUENCY
0
X
0
Power (dBm)
-5
Power (dBm)
X
X
-5
P
SAT
-10
X
-10
P
1dB
-15
P
SAT
-15
P
1dB
-20
0
0.5
1.0
1.5
2.0
-20
0
0.5
1.0
1.5
2.0
Frequency, f (GHz)
X: Typical SSB Third Order Intercept Point
Frequency, f (GHz)
X: Typical SSB Third Order Intercept Point
UPC2714T, UPC2715T
TYPICAL PERFORMANCE CURVES
(T
A
= 25°C)
UPC2714T
OUTPUT POWER vs.
INPUT POWER AND TEMPERATURE
10
V
CC
= 3.4 V
f = 0.5 GH
Z
UPC2715T
OUTPUT POWER vs.
INPUT POWER AND TEMPERATURE
10
V
CC
= 3.4 V
f = 0.5 GHz
Output Power, P
OUT
(dBm)
0
85˚ C
-10
T
A
= 25˚C
Output Power, P
OUT
(dBm)
0
T
A
= 85˚C
T
A
= 25˚C
T
A
= 40˚C
-10
T
A
= 40˚C
T
A
= 85˚C
-20
-20˚ C
-20
-40˚ C
-30
-40
-50
-40
-30
-20
-10
-30
-50
-40
-30
-20
-10
0
Input Power, P
IN
(dBm)
Input Power, P
IN
(dBm)
UPC2714T
OUTPUT POWER vs.
INPUT POWER AND VOLTAGE
10
f = 0.5 GH
Z
UPC2715T
OUTPUT POWER vs.
INPUT POWER AND VOLTAGE
f = 0.5 GH
Z
Output Power, P
OUT
(dBm)
0
3.74 V
Output Power, P
OUT
(dBm)
10
3.74 V
V
CC
= 3.4 V
0
-10
V
CC
= 3.4 V
-20
3.06 V
-10
3.06 V
-20
-30
-40
-50
-40
-30
-20
-10
-30
-50
-40
-30
-20
-10
0
Input Power, P
IN
(dBm)
Input Power, P
IN
(dBm)
NOISE FIGURE vs. FREQUENCY
7
TEST CIRCUIT
Noise Figure, NF (dB)
6
V
CC
1000 pF
UPC2714T
5
UPC2715T
50
Ω
C1
1
1000 pF
2, 3, 5
4
1000 pF
C3
6
C2
50
Ω
OUT
IN
4
3
0
0.5
1.0
1.5
2.0
Frequency, f (GHz)
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