101468E • Skyworks Proprietary and Confidential information • Products and Product Information are Subject to Change Without Notice • October 11, 2004
1
DATA SHEET • CX65003
Table 1. CX65003 Signal Descriptions
Pin #
1
2
3
4
NC
VB
RFIN
Y
Name
No connection
Input bias for amplifier driver
RF input
Output of internal bias circuit
Description
Pin #
5
6
7
8
VCC2
RFOUT
RFOUT
VCC1
Name
Supply voltage
RF output
RF output
Supply voltage
Description
Table 2. CX65003 Absolute Maximum Ratings
Parameter
RF input power
Supply voltage (VCC1 and VCC2 pins)
Supply current (I
D
+ I
BIAS
)
Power dissipation
Case operating temperature
Storage temperature
Junction temperature
T
C
T
ST
T
J
–40
–55
P
IN
VCC
I
CC
Symbol
Min
Typical
Max
15
5.5
240
1.3
+85
+125
+150
Units
dBm
V
mA
W
°C
°C
°C
Note:
Exposure to maximum rating conditions for extended periods may reduce device reliability. There is no damage to device with only one parameter set at the limit and all other
parameters set at or below their nominal value.
Technical Description
The CX65003 is a single stage linear amplifier. The device can be
externally matched for optimum gain and linearity using two to
three passive components. These external components allow the
amplifier to be set to a desired operating frequency.
The CX65003 contains a bias circuit for optimum temperature
tracking performance. An external resistor is used to set the bias
current level. The value of this resistor can be selected to set the
amplifier operational mode to Class A, B, or AB.
Care must be taken when attaching this product, whether it is
done manually or in a production solder reflow environment.
Production quantities of this product are shipped in a standard
tape and reel format. For packaging details, refer to the Skyworks
Application Note,
Tape and Reel,
document number 101568.
Electrical and Mechanical Specifications
The absolute maximum ratings of the CX65003 are provided in
Table 2. The recommended operating conditions are specified in
Table 3 and electrical specifications are provided in Table 4.
Typical performance characteristics of the CX65003 are shown in
Figures 3 through 18. Figure 25 provides the package dimensions
for the 8-pin SOIC and Figure 26 provides the tape and reel
dimensions.
Package and Handling Information
Since the device package is sensitive to moisture absorption, it is
baked and vacuum packed before shipping. Instructions on the
shipping container label regarding exposure to moisture after the
container seal is broken must be followed. Otherwise, problems
related to moisture absorption may occur when the part is
subjected to high temperature during solder assembly.
If the part is attached in a reflow oven, the temperature ramp rate
should not exceed 5
°C
per second. Maximum temperature
should not exceed 225
°C
and the time spent at a temperature
that exceeds 210
°C
should be limited to less than 10 seconds. If
the part is manually attached, precaution should be taken to
ensure that the part is not subjected to a temperature that
exceeds 300
°C
for more than 10 seconds.
Electrostatic Discharge (ESD) Sensitivity
The CX65003 is a static-sensitive electronic device. Do not
operate or store near strong electrostatic fields. Take proper ESD
October 11, 2004 • Skyworks Proprietary and Confidential information • Products and Product Information are Subject to Change Without Notice • 101468E
DATA SHEET • CX65003
Table 3. CX65003 Recommended Operating Conditions
Parameter
Supply voltage (VCC1 and VCC2 pins)
Operating frequency
Junction temperature
Maximum bias condition
VCC
F
O
T
J
(VCC
×
I
D
) < (T
J
_
RECOMMENDED
– T
C
)/R
TH
,
J
-
C
1400
Symbol
Min
Typical
5
2500
140
Max
Units
V
MHz
°C
Table 4. CX65003 Electrical Characteristics
(VCC = 5 V, T
C
= 25 °C)
Parameter
OIP3 Match, Frequency = 1960 MHz (Note 1)
Quiescent current (l
D
+ l
BIAS
)
Small signal gain
Linear output power (Note 2)
Power Added Efficiency
Noise Figure (NF)
Output IP3
Iq
G
P
OUT
PAE
NF
OIP3
Two CW tones with 1 MHz
spacing, P
IN
= –4 dBm per
tone
42
R
BIAS
= 270
Ω
P
IN
= –15 dBm
P
IN
= +13 dBm
P
IN
= +13 dBm
10
23
30
120
11.5
24.5
38
5
48
6
130
mA
dB
dBm
%
dB
dBm
Symbol
Test Conditions
Min
Typical
Max
Units
Thermal resistance (junction – case)
ACPR Match, Frequency = 2140 MHz (Note 3)
Quiescent current (l
D
+ l
BIAS
)
Small signal gain (Note 4)
Peak envelope power (Note 2)
R
TH
,
J
-
C
65
°C/W
Iq
G
P
PEP
R
BIAS
= 330
Ω
P
IN
= –15 dBm
3G-WCDMA downlink test
model #1 signal or IS95
downlink 9 ch Fwd signal,
P
IN
= 9 dBm
IS95 downlink CDMA
signal, 9 ch Fwd,
P
IN
= 11 dBm
3G-WCDMA downlink test
model #1 signal with
64 DPCH, P
IN
= 9 dBm
20
9.5
90
11
29
105
mA
dB
dBm
Average output power (F = 1.96 GHz)
@ ACPR = –45 dBc (Note 3), 885 kHz offset
Average output power (F = 2.14 GHz)
@ ACLR = –45 dBc, 5 MHz offset
P
OUT
ACPR
21
dBm
P
OUT
ACLR
18.5
20
dBm
Note 1:
Device matched for optimum OIP3 according to circuit shown in Figure 21.
Note 2:
For reliable operation, do not violate the maximum input drive level specified in Table 2.
Note 3:
Device matched for optimum ACPR according to circuit shown in Figure 22.
Note 4:
For optimum output small signal gain and Noise Figure, use the matching circuit shown in Figure 21 and the characterization values for 1960 MHz operation.
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