1N4099C THRU 1N4135C
SILICON ZENER DIODE
LOW NOISE
6.8 VOLT THRU 100 VOLT
250mW, 2% TOLERANCE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 1N4099C series
silicon Zener diode is designed for low leakage, low
current, and low noise applications.
MARKING: FULL PART NUMBER
DO-35 CASE
MAXIMUM RATINGS:
(TA=25°C)
Power Dissipation
Operating and Storage Junction Temperature
SYMBOL
PD
TJ, Tstg
250
-65 to +200
UNITS
mW
°C
ELECTRICAL CHARACTERISTICS:
(TA=25°C) VF=1.1V MAX @ IF=200mA (for all types)
ZENER
VOLTAGE
VZ @ IZT
MIN
V
1N4099C
1N4100C
1N4101C
1N4102C
1N4103C
1N4104C
1N4105C
1N4106C
1N4107C
1N4108C
1N4109C
1N4110C
1N4111C
1N4112C
1N4113C
1N4114C
1N4115C
1N4116C
1N4117C
1N4118C
1N4119C
1N4120C
1N4121C
6.664
7.350
8.036
8.526
8.918
9.80
10.78
11.76
12.74
13.72
14.70
15.68
16.66
17.64
18.62
19.60
21.56
23.52
24.50
26.46
27.44
29.40
32.34
NOM
V
6.8
7.5
8.2
8.7
9.1
10
11
12
13
14
15
16
17
18
19
20
22
24
25
27
28
30
33
MAX
V
6.936
7.650
8.364
8.874
9.282
10.20
11.22
12.24
13.26
14.28
15.30
16.32
17.34
18.36
19.38
20.40
22.44
24.48
25.50
27.54
28.56
30.60
33.66
TEST
CURRENT
IZT
μA
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
MAXIMUM
ZENER
IMPEDANCE
ZZT @ IZT
Ω
200
200
200
200
200
200
200
200
200
200
100
100
100
100
150
150
150
150
150
150
200
200
200
MAXIMUM
REVERSE
CURRENT
IR
μA
10
10
1.0
1.0
1.0
1.0
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
@
VR
V
5.2
5.7
6.3
6.7
7.0
7.6
8.5
9.2
9.9
10.7
11.4
12.2
13.0
13.7
14.5
15.2
16.8
18.3
19.0
20.5
21.3
22.8
25.1
MAXIMUM
ZENER
CURRENT
IZM
mA
35.0
31.8
29.0
27.4
26.2
24.8
21.6
20.4
19.0
17.5
16.3
15.4
14.5
13.2
12.5
11.9
10.8
9.9
9.5
8.8
8.5
7.9
7.2
MAXIMUM
NOISE
DENSITY
ND @ 250μA
μV/ Hz
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
TYPE
R1 (4-February 2014)
1N4099C THRU 1N4135C
SILICON ZENER DIODE
LOW NOISE
6.8 VOLT THRU 100 VOLT
250mW, 2% TOLERANCE
ELECTRICAL CHARACTERISTICS - Continued:
(TA=25°C) VF=1.1V MAX @ IF=200mA (for all types)
ZENER
VOLTAGE
VZ @ IZT
MIN
V
1N4122C
1N4123C
1N4124C
1N4125C
1N4126C
1N4127C
1N4128C
1N4129C
1N4130C
1N4131C
1N4132C
1N4133C
1N4134C
1N4135C
35.28
38.22
42.14
46.06
49.98
54.88
58.80
60.76
66.64
73.50
80.36
85.26
89.18
98.00
NOM
V
36
39
43
47
51
56
60
62
68
75
82
87
91
100
MAX
V
36.72
39.78
43.86
47.94
52.02
57.12
61.20
63.24
69.36
76.50
83.64
88.74
92.82
102.0
TEST
CURRENT
IZT
μA
250
250
250
250
250
250
250
250
250
250
250
250
250
250
MAXIMUM
ZENER
IMPEDANCE
ZZT @ IZT
Ω
200
200
250
250
300
300
400
500
700
700
800
1.0K
1.2K
1.5K
MAXIMUM
REVERSE
CURRENT
IR
μA
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
@
VR
V
27.4
29.7
32.7
35.8
38.8
42.6
45.6
47.1
51.7
57.0
62.4
66.2
69.2
76.0
MAXIMUM
ZENER
CURRENT
IZM
mA
6.6
6.1
5.5
5.1
4.6
4.2
4.0
3.8
3.5
3.1
2.9
2.7
2.6
2.3
MAXIMUM
NOISE
DENSITY
ND @ 250μA
μV/ Hz
40
40
40
40
40
40
40
40
40
40
40
40
40
40
TYPE
DO-35 CASE - MECHANICAL OUTLINE
MARKING: FULL PART NUMBER
R1 (4-February 2014)
w w w. c e n t r a l s e m i . c o m
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
