Bulletin I2018 rev. C 01/05
25F(R) SERIES
STANDARD RECOVERY DIODES
Stud Version
Features
High surge current capability
Avalanche types available
Stud cathode and stud anode version
Wide current range
Types up to 1200V V
RRM
25 A
Typical Applications
Battery charges
Converters
Power supplies
Machine tool controls
Major Ratings and Characteristics
Parameters
I
F(AV)
@ T
C
I
F(RMS)
I
FSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
V
RRM
T
J
range
range
25F(R)
25
120
40
356
373
636
580
100 to 1200
- 65 to 175
Units
A
°C
A
A
A
A
2
s
A
2
s
V
°C
case style
DO-203AA (DO-4)
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1
25F(R) Series
Bulletin I2018 rev. C 01/05
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number
Code
V
RRM
, maximum
repetitive peak
reverse voltage
V
100
200
400
600
800
1000
1200
V
RSM
, maximum non-
repetitive peak
reverse voltage
V
150
275
500
725
950
1200
1400
V
R(BR)
, minimum
avalanche
voltage
V
--
--
500
750
950
1150
1350
I
RRM
max.
@ T
J
= 175°C
(1)
mA
10
20
40
25F(R)
60
80
100
120
12
(1)
Avalanche version only available from V
RRM
400V to 1200V.
Forward Conduction
Parameter
I
F(AV)
Max. average forward current
@ Case temperature
I
F(RMS)
Max. RMS forward current
P
R
I
FSM
Maximum non-repetitive
peak reverse power
Max. peak, one-cycle forward,
non-repetitive surge current
356
373
300
314
I
2
t
Maximum I
2
t for fusing
636
580
450
410
I
2
√t
Maximum I
2
√t
for fusing
voltage
V
F(TO)2
High level value of threshold
voltage
r
f
1
r
f
2
V
FM
Low level value of forward
slope resistance
High level value of forward
slope resistance
Max. forward voltage drop
6360
0.80
V
0.90
6.80
mΩ
5.70
1.30
V
(I >
π
x I
F(AV)
), T
J
= T
J
max.
I
pk
= 78A, T
J
= 25°C, t
p
= 400µs rectangular wave
(I >
π
x I
F(AV)
), T
J
= T
J
max.
(16.7% x
π
x I
F(AV)
< I <
π
x I
F(AV)
), T
J
= T
J
max.
A
2
√s
A
2
s
A
25F(R)
25
120
40
10
Units Conditions
A
°C
A
K/W
10µs square pulse, T
J
= T
J
max.
see note (2)
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
No voltage
reapplied
100% V
RRM
reapplied
No voltage
reapplied
100% V
RRM
reapplied
Sinusoidal half wave,
Initial T = T
J
max.
J
180° conduction, half sine wave
t = 0.1 to 10ms, no voltage reapplied
(16.7% x
π
x I
F(AV)
< I <
π
x I
F(AV)
), T
J
= T
J
max.
V
F(TO)1
Low level value of threshold
(2)
Available only for Avalanche version, all other parameters the same as 25F.
2
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25F(R) Series
Bulletin I2018 rev. C 01/05
Thermal and Mechanical Specifications
Parameter
T
J
T
stg
R
thJC
R
thCS
T
Max. junction operating temperature range
Max. storage temperature range
Max. thermal resistance, junction to case
Max. thermal resistance, case
to heatsink
Allowable mounting torque
25F(R)
-65 to 175
-65 to 200
1.5
0.5
1.5
+0-10%
13
1.2
+0-10%
10
Units
°C
Conditions
DC operation
K/W
Nm
lbf.in
Nm
lbf.in
g (oz)
See Outline Table
Lubricated threads
Mounting surface, smooth, flat and
greased
Not lubricated threads
wt
Approximate weight
Case style
7 (0.25)
DO-203AA (DO-4)
∆R
thJC
Conduction
(The following table shows the increment of thermal resistence R
thJC
when devices operate at different conduction angles than DC)
Conduction angle
180°
120°
90°
60°
30°
Sinusoidal conduction Rectangular conduction Units
0.28
0.39
0.50
0.73
1.20
0.24
0.41
0.54
0.75
1.21
K/W
Conditions
T
J
= T
J
max.
Ordering Information Table
Device Code
A
1
25
2
F
3
R
4
120
5
M
6
1
-
A
= Avalanche diode
None = Standard diode
2
3
4
-
-
-
Current rating: Code = I
F(AV)
F
= Standard device
None = Stud Normal Polarity (Cathode to Stud)
R
= Stud Reverse Polarity (Anode to Stud)
5
6
-
-
Voltage code: Code x 10 = V
RRM
(See Voltage Ratings table)
None = Stud base DO-203AA (DO-4) 10-32UNF-2A
M
= Stud base DO-203AA (DO-4) M5 X 0.8 - (Not available for Avalanche diodes)
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25F(R) Series
Bulletin I2018 rev. C 01/05
Outlines Table
Case Style DO-203AA (DO-4)
All dimensions in millimeters (inches)
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
180
170
160
150
Conduction Angle
180
170
160
150
140
130
120
110
100
0
5
30°
25F(R) Series
R
thJC
(DC) = 1.5 K/W
25F(R) Series
R
thJC
(DC) = 1.5 K/W
Conduction Period
140
130
120
110
100
0
5
60°
30°
10
15
90°
120°
180°
20
25
30
90°
60°
120°
180°
DC
10 15 20 25 30 35 40 45
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
4
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25F(R) Series
Bulletin I2018 rev. C 01/05
Maximum Average Forward Power Loss (W)
35
30
25
20
15
10
5
0
Conduction Angle
180°
120°
90°
60°
30°
RMS Limit
R
th
K/
W
4K
/W
3
2
W
K/
SA
=1
W
K/
aR
elt
-D
6K
/W
8K
/W
12 K
/W
20 K/
W
25F(R) Series
T = 175°C
J
0
5
10
15
20
25
40 K/W
0
30
25
50
75
100
125
150
175
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - Forward Power Loss Characteristics
45
40
35
30
25
20 RMS Limit
15
10
5
0
0
5
10
15
20
Conduction Period
Maximum Average Forward Power Loss (W)
DC
180°
120°
90°
60°
30°
2
R
th
K/
W
SA
3K
/W
4K
/W
=
1
W
K/
aR
elt
-D
6K
/W
8K
/W
12 K
/W
25F(R) Series
T
J
= 175°C
25
30
35
0
40
20 K/W
40 K/W
25
50
75
100
125
150
175
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - Forward Power Loss Characteristics
350
300
250
200
150
100
50
400
350
300
250
200
150
100
50
0
0.01
25F(R) Series
0.1
1
10
Peak Half Sine Wave Forward Current (A)
25F(R) Series
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave Forward Current (A)
At Any Rated Load Condition And With
Rated V
RRM
Applied Following Surge.
Initial T = 175°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial T
J
= 175°C
No Voltage Reapplied
Rated V
RRM
Reapplied
Pulse Train Duration (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
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MEMS传感器
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