DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3481
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3481 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
2SK3481
2SK3481-S
2SK3481-ZJ
2SK3481-Z
PACKAGE
TO-220AB
TO-262
TO-263
TO-220SMD
Note
FEATURES
•
Super low on-state resistance:
R
DS(on)1
= 50 mΩ MAX. (V
GS
= 10 V, I
D
= 15 A)
R
DS(on)2
= 58 mΩ MAX. (V
GS
= 4.5 V, I
D
= 15 A)
•
Low C
iss
: C
iss
= 2300 pF TYP.
•
Built-in gate protection diode
Note
TO-220SMD package is produced only
in Japan.
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
100
±20
±30
±60
56
1.5
150
–55 to +150
26
68
V
V
A
A
W
W
°C
°C
A
mJ
(TO-263, TO-220SMD)
(TO-262)
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I
AS
E
AS
Notes 1.
PW
≤
10
µ
s, Duty cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
= 50 V, R
G
= 25
Ω,
V
GS
= 20
→
0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R
th(ch-C)
R
th(ch-A)
2.23
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D15063EJ1V0DS00 (1st edition)
Date Published January 2002 NS CP(K)
Printed in Japan
©
2002
2SK3481
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
= 80 V
V
GS
= 10 V
I
D
= 30 A
I
F
= 30 A, V
GS
= 0 V
I
F
= 30 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
TEST CONDITIONS
V
DS
= 100 V, V
GS
= 0 V
V
GS
= ±20 V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 15 A
V
GS
= 10 V, I
D
= 15 A
V
GS
= 4.5 V, I
D
= 15 A
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 50 V, I
D
= 15 A
V
GS
= 10 V
R
G
= 0
Ω
1.5
9
2.0
18
40
44
2300
230
120
13
10
53
5.0
48
7.0
12
1.0
70
160
50
58
MIN.
TYP.
MAX.
10
±10
2.5
UNIT
µ
A
µ
A
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
BV
DSS
V
DS
V
GS
0
50
Ω
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
R
L
PG.
R
G
V
DD
I
D
90%
90%
V
GS
V
GS
Wave Form
0
10%
V
GS
90%
I
AS
I
D
V
DD
I
D
I
D
Wave Form
0 10%
10%
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
50
Ω
R
L
V
DD
PG.
2
Data Sheet D15063EJ1V0DS
2SK3481
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
50
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
dT - Percentage of Rated Power - %
100
80
60
40
20
P
T
- Total Power Dissipation - W
20
40
60
80
100
120 140
160
40
30
20
10
0
0
0
20
40
60
80
100 120 140
160
T
C
- Case Temperature - ˚C
T
C
- Case Temperature -
˚C
FORWARD BIAS SAFE OPERATING AREA
100
I
D(DC)
10
I
D(pulse)
10
µ
s
R
(a
DS(
t V
on)
G
L
S
i
= mit
10 ed
V)
DC
10
m
I
D
- Drain Current - A
0
s
iss
rD
we ed
Po imit
L
µ
s
1
10
m
s
tio
n
a
ip
1
0.1
0.1
T
C
= 25˚C
Single Pulse
1
10
100
1000
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(t)
- Transient Thermal Resistance - ˚C/W
100
R
th(ch-A)
= 83.3˚C/W
10
1
R
th(ch-C)
= 2.23˚C/W
0.1
T
C
= 25˚C
Single Pulse
100
µ
1m
10 m
100 m
1
10
100
1000
0.01
10
µ
PW - Pulse Width - s
Data Sheet D15063EJ1V0DS
3
2SK3481
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
80
FORWARD TRANSFER CHARACTERISTICS
100
Pulsed
I
D
- Drain Current - A
1
T
A
=
−40˚C
T
A
=
−40˚C
25˚C
25˚C
75˚C
75˚C
150˚C
150˚C
I
D
- Drain Current - A
10
60
V
GS
= 10 V
40
4.5 V
0.1
20
0.01
1
2
3
V
DS
= 10 V
4
5
0
0
1
2
3
4
5
Pulsed
6
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
100 V
DS
= 10 V
Pulsed
10
T
A
= 150˚C
75˚C
25˚C
−40˚C
R
DS(on)
- Drain to Source On-state Resistance - mΩ
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
| y
fs
| - Forward Transfer Admittance - S
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
80
Pulsed
60
I
D
= 30 A
40
15 A
20
1
0.1
0.01
0.01
0.1
1
10
100
00
5
10
15
20
I
D
- Drain Current - A
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
80
Pulsed
4
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
GS(off)
- Gate Cut-off Voltage - V
V
DS
= 10 V
I
D
= 1 mA
60
V
GS
= 4.5 V
40
10 V
20
3
2
1
0
0.1
1
10
100
0
−50
0
50
100
150
I
D
- Drain Current - A
T
ch
- Channel Temperature - ˚C
4
Data Sheet D15063EJ1V0DS
2SK3481
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
120
100
80
60
40
20
I
D
= 15 A
0
−50
0
50
100
150
V
GS
= 4.5 V
10 V
100
Pulsed
Pulsed
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
R
DS(on)
- Drain to Source On-state Resistance - mΩ
I
SD
- Diode Forward Current - A
10
V
GS
= 10 V
1
0V
0.1
0.01
0
0.5
1.0
1.5
V
SD
- Source to Drain Voltage - V
T
ch
- Channel Temperature - ˚C
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
10000
C
iss
1000
1000
SWITCHING CHARACTERISTICS
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
C
iss
, C
oss
, C
rss
- Capacitance - pF
100
t
d(off)
C
oss
100
C
rss
t
d(on)
10
t
r
t
f
V
DD
= 50 V
V
GS
= 10 V
R
G
= 0
Ω
1
0.1
10
0.01
V
GS
= 0 V
f = 1 MHz
0.1
1
10
100
1
10
100
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1000
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
100
10
8
V
GS
6
V
DS
- Drain to Source Voltage - V
t
rr
- Reverse Recovery Time - ns
80
100
60
V
DD
= 80 V
50 V
20 V
40
4
10
20
V
DS
0
I
D
= 30 A
0
10
20
30
40
50
Q
G
- Gate Charge - nC
2
1
0.1
1
10
100
0
60
I
F
- Drain Current - A
V
GS
- Gate to Source Voltage - V
di/dt = 100 A/
µ
s
V
GS
= 0 V
Data Sheet D15063EJ1V0DS
5
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