DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2484
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2484 is N-Channel MOS Field Effect Transistor de-
signed for high voltage switching applications.
3.0 ± 0.3
PACKAGE DIMENSIONS
(in millimeters)
FEATURES
10.6 MAX.
3.6 ± 0.2
10.0
5.9 MIN.
12.7 MIN. 15.5 MAX.
4.8 MAX.
1.3 ± 0.2
•
Low On-Resistance
R
DS(on)
= 2.8
Ω
(V
GS
= 10 V, I
D
= 3.0 A)
•
Low C
iss
C
iss
= 1 200 pF TYP
.
•
High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ˚C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)*
Total Power Dissipation (T
c
= 25 ˚C)
Total Power Dissipation (T
A
= 25 ˚C)
Channel Temperature
Storage Temperature
Single Avalanche Current**
Single Avalanche Energy**
*
PW
≤
10
µ
s, Duty Cycle
≤
1 %
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
I
AS
E
AS
900
±30
±5.0
±10
75
1.5
150
5.0
75
V
V
A
A
W
W
˚C
A
mJ
4
1 2 3
6.0 MAX.
1.3 ± 0.2
0.75 ± 0.1
2.54
0.5 ± 0.2
2.8 ± 0.2
2.54
1. Gate
2. Drain
3. Source
4. Fin (Drain)
JEDEC: TO-220AB
MP-25 (TO-220)
Drain
–55 to +150 ˚C
Body
Diode
Gate
**
Starting T
ch
= 25 ˚C, R
G
= 25
Ω,
V
GS
= 20 V
→
0
Source
Document No. D10276EJ1V0DS00 (1st edition)
Date Published August 1995 P
Printed in Japan
©
1995
2SK2484
ELECTRICAL CHARACTERISTICS (T
A
= 25 ˚C)
CHARACTERISTIC
Drain to Source On-State Resistance
Gate to Source Cutoff Voltage
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
SYMBOL
R
DS(on)
V
GS(off)
| y
fs
|
I
DSS
I
GSS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
1 200
170
30
20
10
70
15
40
7
17
1.0
670
3.5
2.5
2.0
100
±100
MIN.
TYP.
2.2
MAX.
2.8
3.5
UNIT
Ω
V
S
TEST CONDITIONS
V
GS
= 10 V, I
D
= 3.0 A
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 20 V, I
D
= 3.0 A
V
DS
= V
DSS
, V
GS
= 0
V
GS
=
±30
V, V
DS
= 0
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
I
D
= 3.0 A
V
GS
= 10 V
V
DD
= 150 V
R
G
= 10
Ω
I
D
= 5.0 A
V
DD
= 450 V
V
GS
= 10 V
I
F
= 5.0 A, V
GS
= 0
I
F
= 5.0 A, V
GS
= 0
di/dt = 50 A/
µ
s
µ
A
nA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
µ
C
Test Circuit 1 Avalanche Capability
D.U.T.
R
G
= 25
Ω
PG
V
GS
= 20 - 0 V
50
Ω
Test Circuit 2 Switching Time
D.U.T.
L
V
DD
PG.
R
G
R
G
= 10
Ω
R
L
V
GS
Wave Form
V
GS
0
10 %
V
GS (on)
90 %
V
DD
I
D
90 %
90 %
I
D
D
Wave Form
BV
DSS
I
AS
I
D
V
DD
V
DS
V
GS
0
t
t = 1us
Duty Cycle
≤
1 %
I
0
10 %
t
d (on)
t
on
t
r
t
d (off)
t
off
10 %
t
f
Starting T
ch
Test Circuit 3 Gate Charge
D.U.T.
I
G
= 2 mA
PG.
50
Ω
R
L
V
DD
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2
2SK2484
TYPICAL CHARACTERISTICS (T
A
= 25 ˚C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
140
dT - Percentage of Rated Power - %
P
T
- Total Power Dissipation - W
100
80
60
40
20
120
100
80
60
40
20
0
20
40
60
80
100 120 140 160
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
0
20
40
60
80
100 120 140 160
T
C
- Case Temperature - ˚C
T
C
- Case Temperature - ˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Pulsed
10
FORWARD BIAS SAFE OPERATING AREA
100
PW
I
D
- Drain Current - A
10
I
D(DC)
ite
im
L
d
I
D(pulse)
1
Po
w
er
10
0
s
I
D
- Drain Current - A
=
µ
m
s
1
R
DS
n
(o
)
0.1
T
C
= 25 ˚C
Single Pulse
1
10
10
m
Di
0
s
ss
m
ipa
s
tio
n
Lim
ite
d
10
5
V
GS
= 20 V
10 V
8V
6V
100
1000
0
4
8
12
16
V
DS
- Drain to Source Voltage - V
V
DS
- Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
100
T
A
= –25 ˚C
25 ˚C
75 ˚C
125 ˚C
Pulsed
V
DS
= 10 V
I
D
- Drain Current - A
10
1.0
0.1
0
5
10
15
V
GS
- Gate to Source Voltage - V
3
2SK2484
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1 000
r
th(t)
- Transient Thermal Resistance - ˚C/W
R
th(ch-a)
= 83.3(˚C/W)
100
10
R
th(ch-c)
= 1.67(˚C/W)
1
0.1
0.01
0.001
10
µ
Single Pulse
T
c
=25 ˚C
100
µ
1m
10 m
100 m
1
10
100
1 000
PW - Pulse Width - s
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
| y
fs
| - Forward Transfer Admittance - S
100
V
DS
= 20 V
Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
7
6
5
4
3
2
1
0
4
8
12
I
D
= 6 A
3A
2A
1.5 A
Pulsed
10
T
A
= –25 ˚C
25 ˚C
75 ˚C
125 ˚C
1.0
0.1
0.01
0.1
1.0
10
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
V
GS(off)
- Gate to Source Cutoff Voltage - V
7
6
4
4
2
2
1
0
0.1
1.0
I
D
- Drain Current - A
10
Pulsed
V
GS
= 10 V
R
DS(on
)
- Drain to Source On-State Resistance -
Ω
V
GS
- Gate to Source Voltage - V
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
DS
= 10 V
I
D
= 1 mA
R
DS(on)
- Drain to Source On-State Resistance -
Ω
3
2
–50
0
50
100
150
T
ch
- Channel Temperature - ˚C
4
2SK2484
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
I
SD
- Diode Forward Current - A
100
R
DS(on)
- Drain to Source On-State Resistance -
Ω
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
5
4
3
I
D
= 3 A
I
D
= 2 A
10
2
1
V
GS
= 10 V
V
GS
= 0 V
1
–50
0
50
100
V
GS
= 10 V
Pulsed
150
0.1
0
0.5
1.0
1.5
T
ch
- Channel Temperature - ˚C
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10 000
C
iss
, C
oss
, C
rss
- Capacitance - pF
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
V
GS
= 0
f = 1 MHz
1 000
V
SD
- Source to Drain Voltage - V
SWITCHING CHARACTERISTICS
C
iss
1 000
100
t
r
t
f
t
d(off)
t
d(on)
100
C
oss
10
C
rss
10
0.1
1
10
100
1.0
0.1
1.0
V
DD
= 150 V
V
GS
= 10 V
R
G
= 10
Ω
10
100
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
10 000
t
rr
- Reverse Recovery time - ns
di/dt = 50 A/
µ
s
V
GS
= 0
V
GS
- Gate to Source Voltage - V
16
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
I
D
= 5 A
14
12
10
8
6
4
2
0
10
20
30
40
V
DD
= 450 V
300 V
150 V
1 000
100
10
0.1
1.0
10
100
I
D
- Drain Current - A
Q
g
- Gate Charge - nC
5
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