Cache Tag SRAM, 8KX8, 18ns, BICMOS, PDSO28, 0.300 INCH, SOJ-28
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | IDT (Integrated Device Technology) |
| 零件包装代码 | SOJ |
| 包装说明 | 0.300 INCH, SOJ-28 |
| 针数 | 28 |
| Reach Compliance Code | not_compliant |
| ECCN代码 | EAR99 |
| 最长访问时间 | 18 ns |
| JESD-30 代码 | R-PDSO-J28 |
| JESD-609代码 | e0 |
| 长度 | 17.9324 mm |
| 内存密度 | 65536 bit |
| 内存集成电路类型 | CACHE TAG SRAM |
| 内存宽度 | 8 |
| 湿度敏感等级 | 3 |
| 功能数量 | 1 |
| 端口数量 | 1 |
| 端子数量 | 28 |
| 字数 | 8192 words |
| 字数代码 | 8000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 70 °C |
| 最低工作温度 | |
| 组织 | 8KX8 |
| 输出特性 | 3-STATE |
| 可输出 | YES |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | SOJ |
| 封装等效代码 | SOJ28,.34 |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 并行/串行 | PARALLEL |
| 电源 | 5 V |
| 认证状态 | Not Qualified |
| 座面最大高度 | 3.556 mm |
| 最大压摆率 | 0.15 mA |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | YES |
| 技术 | BICMOS |
| 温度等级 | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn85Pb15) |
| 端子形式 | J BEND |
| 端子节距 | 1.27 mm |
| 端子位置 | DUAL |
| 宽度 | 7.5184 mm |
| Base Number Matches | 1 |
| IDT71B74S18Y | IDT71B74S15TD | IDT71B74S18TD | IDT71B74S25TDB | IDT71B74S12TD | IDT71B74S15TDB | IDT71B74S18TDB | IDT71B74S18TP | IDT71B74S18Y8 | |
|---|---|---|---|---|---|---|---|---|---|
| 描述 | Cache Tag SRAM, 8KX8, 18ns, BICMOS, PDSO28, 0.300 INCH, SOJ-28 | Cache Tag SRAM, 8KX8, 15ns, BICMOS, CDIP28, 0.300 INCH, HERMETIC SEALED, DIP-28 | Cache Tag SRAM, 8KX8, 18ns, BICMOS, CDIP28, 0.300 INCH, HERMETIC SEALED, DIP-28 | Cache Tag SRAM, 8KX8, 25ns, BICMOS, CDIP28, 0.300 INCH, HERMETIC SEALED, DIP-28 | Cache Tag SRAM, 8KX8, 12ns, BICMOS, CDIP28, 0.300 INCH, HERMETIC SEALED, DIP-28 | Cache Tag SRAM, 8KX8, 15ns, BICMOS, CDIP28, 0.300 INCH, HERMETIC SEALED, DIP-28 | Cache Tag SRAM, 8KX8, 18ns, BICMOS, CDIP28, 0.300 INCH, HERMETIC SEALED, DIP-28 | Cache Tag SRAM, 8KX8, 18ns, BICMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28 | Cache Tag SRAM, 8KX8, 18ns, BICMOS, PDSO28, 0.300 INCH, SOJ-28 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 厂商名称 | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) |
| 零件包装代码 | SOJ | DIP | DIP | DIP | DIP | DIP | DIP | DIP | SOJ |
| 包装说明 | 0.300 INCH, SOJ-28 | 0.300 INCH, HERMETIC SEALED, DIP-28 | 0.300 INCH, HERMETIC SEALED, DIP-28 | 0.300 INCH, HERMETIC SEALED, DIP-28 | 0.300 INCH, HERMETIC SEALED, DIP-28 | 0.300 INCH, HERMETIC SEALED, DIP-28 | 0.300 INCH, HERMETIC SEALED, DIP-28 | 0.300 INCH, PLASTIC, DIP-28 | 0.300 INCH, SOJ-28 |
| 针数 | 28 | 28 | 28 | 28 | 28 | 28 | 28 | 28 | 28 |
| Reach Compliance Code | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | compliant |
| ECCN代码 | EAR99 | EAR99 | EAR99 | 3A001.A.2.C | EAR99 | 3A001.A.2.C | 3A001.A.2.C | EAR99 | EAR99 |
| 最长访问时间 | 18 ns | 15 ns | 18 ns | 25 ns | 12 ns | 15 ns | 18 ns | 18 ns | 18 ns |
| JESD-30 代码 | R-PDSO-J28 | R-GDIP-T28 | R-GDIP-T28 | R-GDIP-T28 | R-GDIP-T28 | R-GDIP-T28 | R-GDIP-T28 | R-PDIP-T28 | R-PDSO-J28 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| 长度 | 17.9324 mm | 37.211 mm | 37.211 mm | 37.211 mm | 37.211 mm | 37.211 mm | 37.211 mm | 34.544 mm | 17.9324 mm |
| 内存密度 | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit |
| 内存集成电路类型 | CACHE TAG SRAM | CACHE TAG SRAM | CACHE TAG SRAM | CACHE TAG SRAM | CACHE TAG SRAM | CACHE TAG SRAM | CACHE TAG SRAM | CACHE TAG SRAM | CACHE TAG SRAM |
| 内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端口数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 28 | 28 | 28 | 28 | 28 | 28 | 28 | 28 | 28 |
| 字数 | 8192 words | 8192 words | 8192 words | 8192 words | 8192 words | 8192 words | 8192 words | 8192 words | 8192 words |
| 字数代码 | 8000 | 8000 | 8000 | 8000 | 8000 | 8000 | 8000 | 8000 | 8000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 70 °C | 70 °C | 70 °C | 125 °C | 70 °C | 125 °C | 125 °C | 70 °C | 70 °C |
| 组织 | 8KX8 | 8KX8 | 8KX8 | 8KX8 | 8KX8 | 8KX8 | 8KX8 | 8KX8 | 8KX8 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 可输出 | YES | YES | YES | YES | YES | YES | YES | YES | YES |
| 封装主体材料 | PLASTIC/EPOXY | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | SOJ | DIP | DIP | DIP | DIP | DIP | DIP | DIP | SOJ |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | SMALL OUTLINE |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 3.556 mm | 5.08 mm | 5.08 mm | 5.08 mm | 5.08 mm | 5.08 mm | 5.08 mm | 4.57 mm | 3.556 mm |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | YES | NO | NO | NO | NO | NO | NO | NO | YES |
| 技术 | BICMOS | BICMOS | BICMOS | BICMOS | BICMOS | BICMOS | BICMOS | BICMOS | BICMOS |
| 温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | MILITARY | COMMERCIAL | MILITARY | MILITARY | COMMERCIAL | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn85Pb15) | Tin/Lead (Sn85Pb15) | Tin/Lead (Sn85Pb15) | Tin/Lead (Sn85Pb15) | Tin/Lead (Sn85Pb15) | Tin/Lead (Sn85Pb15) | Tin/Lead (Sn85Pb15) | Tin/Lead (Sn85Pb15) | TIN LEAD |
| 端子形式 | J BEND | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | J BEND |
| 端子节距 | 1.27 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 1.27 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 宽度 | 7.5184 mm | 7.62 mm | 7.62 mm | 7.62 mm | 7.62 mm | 7.62 mm | 7.62 mm | 7.62 mm | 7.5184 mm |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 封装等效代码 | SOJ28,.34 | DIP28,.3 | DIP28,.3 | DIP28,.3 | DIP28,.3 | DIP28,.3 | DIP28,.3 | DIP28,.3 | - |
| 电源 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | - |
| 最大压摆率 | 0.15 mA | 0.17 mA | 0.15 mA | 0.17 mA | 0.19 mA | 0.19 mA | 0.17 mA | 0.15 mA | - |
| 是否无铅 | - | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | - | 含铅 |
| 峰值回流温度(摄氏度) | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - | 225 |
| 处于峰值回流温度下的最长时间 | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - | 30 |
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