UVPROM, 2KX8, 30ns, CMOS, CDIP24, 0.300 INCH, WINDOWED, CERDIP-24
| 参数名称 | 属性值 |
| 零件包装代码 | DIP |
| 包装说明 | WDIP, |
| 针数 | 24 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 最长访问时间 | 30 ns |
| 其他特性 | POWER SWITCHED PROM |
| JESD-30 代码 | R-GDIP-T24 |
| JESD-609代码 | e0 |
| 长度 | 31.877 mm |
| 内存密度 | 16384 bit |
| 内存集成电路类型 | UVPROM |
| 内存宽度 | 8 |
| 功能数量 | 1 |
| 端子数量 | 24 |
| 字数 | 2048 words |
| 字数代码 | 2000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 组织 | 2KX8 |
| 输出特性 | 3-STATE |
| 封装主体材料 | CERAMIC, GLASS-SEALED |
| 封装代码 | WDIP |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE, WINDOW |
| 并行/串行 | PARALLEL |
| 认证状态 | Not Qualified |
| 座面最大高度 | 5.08 mm |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子面层 | TIN LEAD |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 宽度 | 7.62 mm |
| Base Number Matches | 1 |
| 5962-8868003LA | 5962-8868002LA | 5962-8868001LA | 5962-8868004LA | 5962-8873403LA | |
|---|---|---|---|---|---|
| 描述 | UVPROM, 2KX8, 30ns, CMOS, CDIP24, 0.300 INCH, WINDOWED, CERDIP-24 | UVPROM, 2KX8, 35ns, CMOS, CDIP24, 0.300 INCH, WINDOWED, CERDIP-24 | UVPROM, 2KX8, 50ns, CMOS, CDIP24, 0.300 INCH, WINDOWED, CERDIP-24 | UVPROM, 2KX8, 25ns, CMOS, CDIP24, 0.300 INCH, WINDOWED, CERDIP-24 | OTP ROM, 2KX8, 35ns, CMOS, CDIP24, CERAMIC, DIP-24 |
| 零件包装代码 | DIP | DIP | DIP | DIP | DIP |
| 包装说明 | WDIP, | WDIP, | WDIP, | WDIP, | CERAMIC, DIP-24 |
| 针数 | 24 | 24 | 24 | 24 | 24 |
| Reach Compliance Code | unknown | unknow | unknown | unknown | not_compliant |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 最长访问时间 | 30 ns | 35 ns | 50 ns | 25 ns | 35 ns |
| JESD-30 代码 | R-GDIP-T24 | R-GDIP-T24 | R-GDIP-T24 | R-GDIP-T24 | R-GDIP-T24 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 |
| 长度 | 31.877 mm | 31.877 mm | 31.877 mm | 31.877 mm | 31.877 mm |
| 内存密度 | 16384 bit | 16384 bi | 16384 bit | 16384 bit | 16384 bit |
| 内存集成电路类型 | UVPROM | UVPROM | UVPROM | UVPROM | OTP ROM |
| 内存宽度 | 8 | 8 | 8 | 8 | 8 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 24 | 24 | 24 | 24 | 24 |
| 字数 | 2048 words | 2048 words | 2048 words | 2048 words | 2048 words |
| 字数代码 | 2000 | 2000 | 2000 | 2000 | 2000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
| 最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
| 组织 | 2KX8 | 2KX8 | 2KX8 | 2KX8 | 2KX8 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED |
| 封装代码 | WDIP | WDIP | WDIP | WDIP | DIP |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE, WINDOW | IN-LINE, WINDOW | IN-LINE, WINDOW | IN-LINE, WINDOW | IN-LINE |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 5.08 mm | 5.08 mm | 5.08 mm | 5.08 mm | 5.08 mm |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | NO | NO | NO | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY |
| 端子面层 | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | Tin/Lead (Sn/Pb) - hot dipped |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子节距 | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL |
| 宽度 | 7.62 mm | 7.62 mm | 7.62 mm | 7.62 mm | 7.62 mm |
| 其他特性 | POWER SWITCHED PROM | POWER SWITCHED PROM | POWER SWITCHED PROM | POWER SWITCHED PROM | - |
| Base Number Matches | 1 | 1 | 1 | 1 | - |
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