电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

MVPLAD30KP85CE3TR

产品描述Trans Voltage Suppressor Diode, 30000W, 85V V(RWM), Bidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-1
产品类别分立半导体    二极管   
文件大小269KB,共5页
制造商Microsemi
官网地址https://www.microsemi.com
标准
下载文档 详细参数 全文预览

MVPLAD30KP85CE3TR概述

Trans Voltage Suppressor Diode, 30000W, 85V V(RWM), Bidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-1

MVPLAD30KP85CE3TR规格参数

参数名称属性值
是否Rohs认证符合
Objectid1614795081
包装说明ROHS COMPLIANT, PLASTIC PACKAGE-1
针数1
Reach Compliance Codeunknown
ECCN代码EAR99
最大击穿电压115 V
最小击穿电压94.4 V
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码S-PSSO-G1
JESD-609代码e3
湿度敏感等级1
最大非重复峰值反向功率耗散30000 W
元件数量1
端子数量1
最高工作温度150 °C
最低工作温度-65 °C
封装主体材料PLASTIC/EPOXY
封装形状SQUARE
封装形式SMALL OUTLINE
极性BIDIRECTIONAL
最大功率耗散2.5 W
认证状态Not Qualified
最大重复峰值反向电压85 V
表面贴装YES
技术AVALANCHE
端子面层MATTE TIN
端子形式GULL WING
端子位置SINGLE

文档预览

下载PDF文档
PLAD30KP10 thru PLAD30KP400CA, e3
30kW Surface Mount Transient
Voltage Suppressor
SCOTTSDALE DIVISION
DESCRIPTION
These Microsemi 30 kW Transient Voltage Suppressors (TVSs)
are designed for applications requiring protection of voltage-
sensitive electronic devices that may be damaged by harsh or
severe voltage transients including lightning per IEC61000-4-5
and class levels with various source impedances described
herein. This series is available in 10 to 400 volt Standoff
Voltages (V
WM
) in both unidirectional and bi-directional with either
5% or 10% tolerances of the Breakdown Voltage (V
BR
).
Microsemi also offers numerous other TVS products to meet
higher or lower power demands and special applications.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
FEATURES
Available in both Unidirectional and Bidirectional
construction (Bidirectional with C or CA suffix)
Selections for 10 to 400 volt Standoff Voltages V
WM
Suppresses transients up to 30 kW @ 10/1000 µs and 200
kW @ 8/20 µs (see Figure 1)
Fast response
Optional 100%
screening for avionics grade
is available
by adding MA prefix to part number for added 100%
temperature cycle -55
o
C to +125
o
C (10X) as well as surge
(3X) and 24 hours HTRB with post test V
Z
& I
R
(in the
operating direction for unidirectional or both directions for
bidirectional)
Options for screening in accordance with MIL-PRF-19500
for JAN, JANTX, and JANTXV are available by adding MQ,
MX, or MV prefixes respectively to part numbers.
Moisture classification is Level 1 with no dry pack required
per IPC/JEDEC J-STD-020B
RoHS Compliant devices available by adding an “e3” suffix
APPLICATIONS / BENEFITS
Protection from switching transients and induced RF
Protection from ESD, and EFT per IEC 61000-4-2 and
IEC 61000-4-4
Secondary lightning protection per IEC61000-4-5 with
42 Ohms source impedance:
Class 1,2,3,4: PLAD30KP10 - PLAD30KP400A or CA
Class 5: PLAD30KP10 - PLAD30KP400A or CA (short
distance)
Class 5: PLAD30KP10 - PLAD30KP220A or CA (long
distance)
Secondary lightning protection per IEC61000-4-5 with
12 Ohms source impedance:
Class 1,2, 3: PLAD30KP10 to PLAD30KP400A or CA
Class 4: PLAD30KP10 to PLAD30KP220A or CA
Secondary lightning protection per IEC61000-4-5 with 2
Ohms source impedance:
Class 2: PLAD30KP10 to PLAD30KP400A or CA
Class 3: PLAD30KP10 to PLAD30KP220A or CA
Class 4: PLAD30KP10 to PLAD30KP110A or CA
MAXIMUM RATINGS
Peak Pulse Power dissipation at 25
º
C: 30,000 watts at
10/1000
μs
(also see Figures 1 and 2)
Impulse repetition rate (duty factor): 0.05%
t
clamping
(0 volts to V
(BR)
min.): < 100 ps theoretical for
unidirectional and < 5 ns for bidirectional
Operating & Storage temperature: -65
º
C to +150
º
C
Thermal resistance: 0.5
º
C/W junction to case, or 50
º
C/W
junction to ambient when mounted on FR4 PC board with
recommended mounting pad with 1 oz Cu (see last page)
Steady-State Power dissipation: 250 watts at T
c
= 25
o
C,
or 2.5 watts at T
A
= 25
º
C when mounted on FR4 PC
board as described for thermal resistance above
Forward Surge: 1500 Amps (theoretical) at 8.3 ms half-
sine wave for unidirectional devices only
Solder temperatures: 260
º
C for 10 s (maximum)
MECHANICAL AND PACKAGING
CASE: Void-free transfer molded thermosetting
epoxy body meeting UL94V-0
FINISH: Tin-Lead or RoHS Compliant annealed
matte-Tin plating readily solderable per MIL-
STD-750, method 2026
MARKING: Body marked with part number
POLARITY: For unidirectional devices, the
cathode is on the metal backside (package
bottom)
WEIGHT: 1.7-2.0 grams (approximate)
TAPE & REEL option: Standard per EIA-296
for axial package (add “TR” suffix to part
number)
See package dimension on last page
PLAD30KP10 thru 400CA, e3
Copyright
©
2007
9-12-2007 Rev G
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
N沟道耗尽型MOS管
从结构上看,N沟道耗尽型MOS管与N沟道增强型MOS管基本相似,其区别仅在于栅-源极间电压vGS=0时,耗尽型MOS管中的漏-源极间已有导电沟道产生,而增强型MOS管要在vGS≥VT时才出现导电沟道。原 ......
qinkaiabc 模拟电子
玩转Zynq连载1——Zynq的linux启动过程
445783 1概述 简单的,以ug585中的一张图来看,从大的方面说,Zynq中liunx的启动可以分为硬件初始化和软件启动。而硬件初始化,分别是上电(POR)、所有寄存器复位和Zynq芯片的 ......
ove学习使我快乐 FPGA/CPLD
移动通信时代到来,3G人才严重短缺!!!
3G时代来临,融合软件开发和移动通信技术的人才严重短缺,琼宇职业技能培训学校携手英泰普润(简称IMTI)联合进行3G移动通信人才培养,致力于培养移动商务、移动增值、嵌入式开发于一体的高端复 ......
13802373669 嵌入式系统
DSL技术三大主流趋势
尽管DSL技术可以在一条双绞线上传送话音和宽带数据业务,但是该技术只能提供一条话音通道,不能在DSL中同时实现话音和数据传输。如果将DSL技术与异步传送模式(ATM)集成,就能够以ATM上话音(VoAT ......
songbo 无线连接
新手初学TM4C123GH6PMI求指导
新手初学TM4C123GH6PMI,手上只有一块TI的开发板,之前只学过51单片机和一点MSP430的知识。现在想学,无从下手。求各位大神指导一下。或者有什么好的书籍·视频推荐一下也行。先谢过各位啦!...
大北极熊 微控制器 MCU
急需keil3,,3.4以上的版本
哪位有keil3 ,3.4以上的版本传个上来分享下,谢谢了...
zhengzhoutie 嵌入式系统

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 437  2889  2374  1603  2159  33  41  59  9  46 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved