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IS67WV51216DBLL-55TLA1-TR: 产品描述Application Specific SRAM, 512KX16, 55ns, CMOS, PDSO44, 0.400 INCH, LEAD FREE, TSOP2-44; 产品类别存储存储; 文件大小463KB，共17页; 制造商Integrated Silicon Solution ( ISSI ); 标准

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IS67WV51216DBLL-55TLA1-TR概述

Application Specific SRAM, 512KX16, 55ns, CMOS, PDSO44, 0.400 INCH, LEAD FREE, TSOP2-44

IS67WV51216DBLL-55TLA1-TR规格参数

参数名称	属性值
是否无铅	不含铅
是否Rohs认证	符合
厂商名称	Integrated Silicon Solution ( ISSI )
包装说明	TSOP2, TSOP44,.46,32
Reach Compliance Code	compliant
最长访问时间	55 ns
I/O 类型	COMMON
JESD-30 代码	R-PDSO-G44
JESD-609代码	e3
长度	18.41 mm
内存密度	8388608 bit
内存集成电路类型	APPLICATION SPECIFIC SRAM
内存宽度	16
湿度敏感等级	1
功能数量	1
端子数量	44
字数	524288 words
字数代码	512000
工作模式	ASYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-40 °C
组织	512KX16
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	TSOP2
封装等效代码	TSOP44,.46,32
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE
并行/串行	PARALLEL
峰值回流温度（摄氏度）	225
电源	3/3.3 V
认证状态	Not Qualified
筛选级别	AEC-Q100
座面最大高度	1.2 mm
最大待机电流	0.00015 A
最大压摆率	0.035 mA
最大供电电压 (Vsup)	3.6 V
最小供电电压 (Vsup)	2.5 V
标称供电电压 (Vsup)	3 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子面层	MATTE TIN
端子形式	GULL WING
端子节距	0.8 mm
端子位置	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED
宽度	10.16 mm
Base Number Matches	1

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IS66WV51216DALL

IS66/67WV51216DBLL

8Mb LOW VOLTAGE,

ULTRA LOW POWER PSEUDO CMOS STATIC RAM

FEATURES

DESCRIPTION

• High-speed access time:

– 70ns (IS66WV51216DALL, IS66/67WV51216DBLL)

– 55ns (IS66/67WV51216DBLL)

JULY 2011

• CMOS low power operation

• Single power supply

– V

= 1.7V-1.95V

(IS66WV51216dALL)

– V

= 2.5V-3.6V

(IS66/67WV51216dBLL)

• Three state outputs

• Data control for upper and lower bytes

• Industrial temperature available

• Lead-free available

The

ISSI

IS66WV51216DALL and IS66/67WV51216DBLL

are high-speed, 8M bit static RAMs organized as 512K

words by 16 bits. It is fabricated using

ISSI

's high-

performance CMOS technology.This highly reliable process

coupled with innovative circuit design techniques, yields

high-performance and low power consumption devices.

When

CS1

is HIGH (deselected) or when CS2 is LOW

(deselected) or when

CS1

is LOW, CS2 is HIGH and both

and

are HIGH, the device assumes a standby mode

at which the power dissipation can be reduced down with

CMOS input levels.

Easy memory expansion is provided by using Chip Enable

and Output Enable inputs. The active LOW Write Enable

(WE)

controls both writing and reading of the memory. A

data byte allows Upper Byte

(UB)

and Lower Byte (LB)

access.

The IS66WV51216DALL and IS66/67WV51216DBLL are

packaged in the JEDEC standard 48-ball mini BGA (6mm

x 8mm) and 44-Pin TSOP (TYPE II). The device is aslo

available for die sales.

FUNCTIONAL BLOCK DIAGRAM

A0-A18

DECODER

512K x 16

MEMORY ARRAY

GND

I/O0-I/O7

Lower Byte

I/O8-I/O15

Upper Byte

I/O

DATA

CIRCUIT

COLUMN I/O

CS2

CS1

CONTROL

CIRCUIT

liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on

any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause

failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written

assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc. — www.issi.com

Rev. A

06/28/2011

IS67WV51216DBLL-55TLA1-TR相似产品对比

	IS67WV51216DBLL-55TLA1-TR	IS67WV51216DBLL-55TLA1	IS67WV51216DBLL-70TLA1	IS67WV51216DBLL-70TLA1-TR	IS67WV51216DBLL-70BLA1	IS67WV51216DBLL-55BLA1	IS66WV51216DALL-70TLI	IS66WV51216DALL-70BLI	IS66WV51216DALL-70BLI-TR
描述	Application Specific SRAM, 512KX16, 55ns, CMOS, PDSO44, 0.400 INCH, LEAD FREE, TSOP2-44	Pseudo Static RAM, 512KX16, 55ns, CMOS, PDSO44, 0.400 INCH, LEAD FREE, TSOP2-44	Pseudo Static RAM, 512KX16, 70ns, CMOS, PDSO44, 0.400 INCH, LEAD FREE, TSOP2-44	Application Specific SRAM, 512KX16, 70ns, CMOS, PDSO44, 0.400 INCH, LEAD FREE, TSOP2-44	Pseudo Static RAM, 512KX16, 70ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, BGA-48	Pseudo Static RAM, 512KX16, 55ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, BGA-48	Pseudo Static RAM, 512KX16, 70ns, CMOS, PDSO44, 0.400 INCH, LEAD FREE, TSOP2-44	Pseudo Static RAM, 512KX16, 70ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, BGA-48	Application Specific SRAM, 512KX16, 70ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, BGA-48
是否Rohs认证	符合	符合	符合	符合	符合	符合	符合	符合	符合
包装说明	TSOP2, TSOP44,.46,32	TSOP2, TSOP44,.46,32	TSOP2, TSOP44,.46,32	TSOP2, TSOP44,.46,32	TFBGA, BGA48,6X8,30	TFBGA, BGA48,6X8,30	TSOP2, TSOP44,.46,32	TFBGA, BGA48,6X8,30	TFBGA, BGA48,6X8,30
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compli
最长访问时间	55 ns	55 ns	70 ns	70 ns	70 ns	55 ns	70 ns	70 ns	70 ns
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	R-PDSO-G44	R-PDSO-G44	R-PDSO-G44	R-PDSO-G44	R-PBGA-B48	R-PBGA-B48	R-PDSO-G44	R-PBGA-B48	R-PBGA-B48
长度	18.41 mm	18.41 mm	18.41 mm	18.41 mm	8 mm	8 mm	18.41 mm	8 mm	8 mm
内存密度	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bi
内存集成电路类型	APPLICATION SPECIFIC SRAM	PSEUDO STATIC RAM	PSEUDO STATIC RAM	APPLICATION SPECIFIC SRAM	PSEUDO STATIC RAM	PSEUDO STATIC RAM	PSEUDO STATIC RAM	PSEUDO STATIC RAM	APPLICATION SPECIFIC SRAM
内存宽度	16	16	16	16	16	16	16	16	16
功能数量	1	1	1	1	1	1	1	1	1
端子数量	44	44	44	44	48	48	44	48	48
字数	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words
字数代码	512000	512000	512000	512000	512000	512000	512000	512000	512000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C
最低工作温度	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
组织	512KX16	512KX16	512KX16	512KX16	512KX16	512KX16	512KX16	512KX16	512KX16
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	TSOP2	TSOP2	TSOP2	TSOP2	TFBGA	TFBGA	TSOP2	TFBGA	TFBGA
封装等效代码	TSOP44,.46,32	TSOP44,.46,32	TSOP44,.46,32	TSOP44,.46,32	BGA48,6X8,30	BGA48,6X8,30	TSOP44,.46,32	BGA48,6X8,30	BGA48,6X8,30
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	SMALL OUTLINE, THIN PROFILE	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
电源	3/3.3 V	3/3.3 V	3/3.3 V	3/3.3 V	3/3.3 V	3/3.3 V	1.8 V	1.8 V	1.8 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm
最大待机电流	0.00015 A	0.00015 A	0.00015 A	0.00015 A	0.00015 A	0.00015 A	0.00012 A	0.00012 A	0.00012 A
最大压摆率	0.035 mA	0.035 mA	0.035 mA	0.035 mA	0.035 mA	0.035 mA	0.025 mA	0.025 mA	0.025 mA
最大供电电压 (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	1.95 V	1.95 V	1.95 V
最小供电电压 (Vsup)	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	1.7 V	1.7 V	1.7 V
标称供电电压 (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V	1.8 V	1.8 V	1.8 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	BALL	BALL	GULL WING	BALL	BALL
端子节距	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.75 mm	0.75 mm	0.8 mm	0.75 mm	0.75 mm
端子位置	DUAL	DUAL	DUAL	DUAL	BOTTOM	BOTTOM	DUAL	BOTTOM	BOTTOM
宽度	10.16 mm	10.16 mm	10.16 mm	10.16 mm	6 mm	6 mm	10.16 mm	6 mm	6 mm
厂商名称	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	-	-	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )
筛选级别	AEC-Q100	AEC-Q100	AEC-Q100	AEC-Q100	AEC-Q100	AEC-Q100	-	-	-
Base Number Matches	1	1	1	1	1	1	-	-	-
零件包装代码	-	TSOP2	TSOP2	-	DSBGA	DSBGA	TSOP2	DSBGA	-
针数	-	44	44	-	48	48	44	48	-
ECCN代码	-	3A991.B.2.A	3A991.B.2.A	-	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A

IS67WV51216DBLL-55TLA1-TR

IS67WV51216DBLL-55TLA1-TR概述

IS67WV51216DBLL-55TLA1-TR规格参数

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