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HYB39S256400T-8

产品描述256 MBit Synchronous DRAM
产品类别存储    存储   
文件大小283KB,共56页
制造商SIEMENS
官网地址http://www.infineon.com/
下载文档 详细参数 选型对比 全文预览

HYB39S256400T-8概述

256 MBit Synchronous DRAM

HYB39S256400T-8规格参数

参数名称属性值
零件包装代码TSOP2
包装说明,
针数54
Reach Compliance Codeunknow
ECCN代码EAR99
Is SamacsysN
访问模式FOUR BANK PAGE BURST
最长访问时间6 ns
其他特性AUTO/SELF REFRESH
JESD-30 代码R-PDSO-G54
内存密度268435456 bi
内存集成电路类型SYNCHRONOUS DRAM
内存宽度4
功能数量1
端口数量1
端子数量54
字数67108864 words
字数代码64000000
工作模式SYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织64MX4
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
认证状态Not Qualified
自我刷新YES
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)3 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子形式GULL WING
端子位置DUAL
Base Number Matches1

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256 MBit Synchronous DRAM
HYB 39S256400/800/160T
Preliminary Information
• High Performance:
-8
-8B
100
10
6
12
7
-10
100
10
7
15
8
Units
MHz
ns
ns
ns
ns
• Multiple Burst Read with Single Write
Operation
• Automatic and Controlled Precharge
Command
• Data Mask for Read/Write control (× 4,
×
8)
• Data Mask for byte control (× 16)
• Auto Refresh (CBR) and Self Refresh
• Suspend Mode and Power Down Mode
• 8192 refresh cycles/64 ms 7,8
µ
• Random Column Address every CLK
(1-N Rule)
• Single 3.3 V
±
0.3 V Power Supply
• LVTTL Interface versions
• Plastic Packages:
P-TSOPII-54 400mil width (× 4,
×
8,
×
16)
• -8 part for PC100 2-2-2 operation
-8B part for PC100 3-2-3 operation
-10 part for PC66 2-2-2 operation
f
CK
t
CK3
t
AC3
t
CK2
t
AC2
125
8
6
10
6
Fully Synchronous to Positive Clock Edge
0 to 70
°C
operating temperature
Four Banks controlled by BA0 & BA1
Programmable CAS Latency: 2, 3, 4
• Programmable Wrap Sequence: Sequential
or Interleave
• Programmable Burst Length:
1, 2, 4, 8
The HYB 39S256400/800/160T are four bank Synchronous DRAM’s organized as
4 banks
×
16 MBit
×
4, 4 banks
×
8 MBit
×
8 and 4 banks
×
4 MBit
×
16 respectively. These syn-
chronous devices achieve high speed data transfer rates for CAS latencies by employing a chip
architecture that prefetches multiple bits and then synchronizes the output data to a system clock.
The chip is fabricated with SIEMENS’ advanced 256 MBit DRAM process technology.
The device is designed to comply with all JEDEC standards set for synchronous DRAM products,
both electrically and mechanically. All of the control, address, data input and output circuits are
synchronized with the positive edge of an externally supplied clock.
Operating the four memory banks in an interleave fashion allows random access operation to occur
at higher rate than is possible with standard DRAMs. A sequential and gapless data rate of is
possible depending on burst length, CAS latency and speed grade of the device.
Auto Refresh (CBR) and Self Refresh operation are supported. These devices operates with a
single 3.3 V
±
0.3 V power supply and are available in TSOPII packages.
Semiconductor Group
1
1998-10-01

HYB39S256400T-8相似产品对比

HYB39S256400T-8 HYB39S256400 HYB39S256400T-10 HYB39S256400T-8B HYB39S256800T-10 HYB39S256800T-8B HYB39S256800T-8
描述 256 MBit Synchronous DRAM 256 MBit Synchronous DRAM 256 MBit Synchronous DRAM 256 MBit Synchronous DRAM 256 MBit Synchronous DRAM 256 MBit Synchronous DRAM 256 MBit Synchronous DRAM
零件包装代码 TSOP2 - TSOP2 TSOP2 TSOP2 TSOP2 TSOP2
针数 54 - 54 54 54 54 54
Reach Compliance Code unknow - unknow unknow unknow unknow unknow
ECCN代码 EAR99 - EAR99 EAR99 EAR99 EAR99 EAR99
访问模式 FOUR BANK PAGE BURST - FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST
最长访问时间 6 ns - 7 ns 6 ns 7 ns 6 ns 6 ns
其他特性 AUTO/SELF REFRESH - AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
JESD-30 代码 R-PDSO-G54 - R-PDSO-G54 R-PDSO-G54 R-PDSO-G54 R-PDSO-G54 R-PDSO-G54
内存密度 268435456 bi - 268435456 bi 268435456 bi 268435456 bi 268435456 bi 268435456 bi
内存集成电路类型 SYNCHRONOUS DRAM - SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM
内存宽度 4 - 4 4 8 8 8
功能数量 1 - 1 1 1 1 1
端口数量 1 - 1 1 1 1 1
端子数量 54 - 54 54 54 54 54
字数 67108864 words - 67108864 words 67108864 words 33554432 words 33554432 words 33554432 words
字数代码 64000000 - 64000000 64000000 32000000 32000000 32000000
工作模式 SYNCHRONOUS - SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 70 °C - 70 °C 70 °C 70 °C 70 °C 70 °C
组织 64MX4 - 64MX4 64MX4 32MX8 32MX8 32MX8
封装主体材料 PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
认证状态 Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
自我刷新 YES - YES YES YES YES YES
最大供电电压 (Vsup) 3.6 V - 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
最小供电电压 (Vsup) 3 V - 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
标称供电电压 (Vsup) 3.3 V - 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
表面贴装 YES - YES YES YES YES YES
技术 CMOS - CMOS CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL - COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子形式 GULL WING - GULL WING GULL WING GULL WING GULL WING GULL WING
端子位置 DUAL - DUAL DUAL DUAL DUAL DUAL
厂商名称 - - SIEMENS - SIEMENS SIEMENS SIEMENS
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