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HYB39S256400: 产品描述256 MBit Synchronous DRAM; 文件大小283KB，共56页; 制造商SIEMENS; 官网地址http://www.infineon.com/

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HYB39S256400概述

256 MBit Synchronous DRAM

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256 MBit Synchronous DRAM

HYB 39S256400/800/160T

Preliminary Information

• High Performance:

-8

-8B

100

-10

100

Units

MHz

• Multiple Burst Read with Single Write

Operation

• Automatic and Controlled Precharge

Command

• Data Mask for Read/Write control (× 4,

• Data Mask for byte control (× 16)

• Auto Refresh (CBR) and Self Refresh

• Suspend Mode and Power Down Mode

• 8192 refresh cycles/64 ms 7,8

• Random Column Address every CLK

(1-N Rule)

• Single 3.3 V

0.3 V Power Supply

• LVTTL Interface versions

• Plastic Packages:

P-TSOPII-54 400mil width (× 4,

16)

• -8 part for PC100 2-2-2 operation

-8B part for PC100 3-2-3 operation

-10 part for PC66 2-2-2 operation

CK3

AC3

CK2

AC2

•

125

Fully Synchronous to Positive Clock Edge

0 to 70

°C

operating temperature

Four Banks controlled by BA0 & BA1

Programmable CAS Latency: 2, 3, 4

• Programmable Wrap Sequence: Sequential

or Interleave

• Programmable Burst Length:

1, 2, 4, 8

The HYB 39S256400/800/160T are four bank Synchronous DRAM’s organized as

4 banks

16 MBit

4, 4 banks

8 MBit

8 and 4 banks

4 MBit

16 respectively. These syn-

chronous devices achieve high speed data transfer rates for CAS latencies by employing a chip

architecture that prefetches multiple bits and then synchronizes the output data to a system clock.

The chip is fabricated with SIEMENS’ advanced 256 MBit DRAM process technology.

The device is designed to comply with all JEDEC standards set for synchronous DRAM products,

both electrically and mechanically. All of the control, address, data input and output circuits are

synchronized with the positive edge of an externally supplied clock.

Operating the four memory banks in an interleave fashion allows random access operation to occur

at higher rate than is possible with standard DRAMs. A sequential and gapless data rate of is

possible depending on burst length, CAS latency and speed grade of the device.

Auto Refresh (CBR) and Self Refresh operation are supported. These devices operates with a

single 3.3 V

0.3 V power supply and are available in TSOPII packages.

Semiconductor Group

1998-10-01

HYB39S256400相似产品对比

	HYB39S256400	HYB39S256400T-10	HYB39S256400T-8B	HYB39S256400T-8	HYB39S256800T-10	HYB39S256800T-8B	HYB39S256800T-8
描述	256 MBit Synchronous DRAM	256 MBit Synchronous DRAM	256 MBit Synchronous DRAM	256 MBit Synchronous DRAM	256 MBit Synchronous DRAM	256 MBit Synchronous DRAM	256 MBit Synchronous DRAM
厂商名称	-	SIEMENS	-	-	SIEMENS	SIEMENS	SIEMENS
零件包装代码	-	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2
针数	-	54	54	54	54	54	54
Reach Compliance Code	-	unknow	unknow	unknow	unknow	unknow	unknow
ECCN代码	-	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
访问模式	-	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
最长访问时间	-	7 ns	6 ns	6 ns	7 ns	6 ns	6 ns
其他特性	-	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
JESD-30 代码	-	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54
内存密度	-	268435456 bi	268435456 bi	268435456 bi	268435456 bi	268435456 bi	268435456 bi
内存集成电路类型	-	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM
内存宽度	-	4	4	4	8	8	8
功能数量	-	1	1	1	1	1	1
端口数量	-	1	1	1	1	1	1
端子数量	-	54	54	54	54	54	54
字数	-	67108864 words	67108864 words	67108864 words	33554432 words	33554432 words	33554432 words
字数代码	-	64000000	64000000	64000000	32000000	32000000	32000000
工作模式	-	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	-	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
组织	-	64MX4	64MX4	64MX4	32MX8	32MX8	32MX8
封装主体材料	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
认证状态	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
自我刷新	-	YES	YES	YES	YES	YES	YES
最大供电电压 (Vsup)	-	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
最小供电电压 (Vsup)	-	3.3 V	3.3 V	3 V	3.3 V	3.3 V	3.3 V
标称供电电压 (Vsup)	-	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
表面贴装	-	YES	YES	YES	YES	YES	YES
技术	-	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	-	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
端子形式	-	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子位置	-	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL

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