CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
T
A
= 25
o
C, Unless Otherwise Specified
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Electrical Specifications
PARAMETER
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
DSS
I
DSS
I
D
= 250µA, V
GS
= 0V (Figure 12)
V
DS
= 25V, V
GS
= 0V
V
DS
= 25V, V
GS
= 0V, T
C
= 150
o
C
30
-
-
-
-
-
-
-
-
1
250
±100
V
µA
µA
nA
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
Drain to Source On Resistance
I
GSS
V
GS
=
±16V
V
GS(TH)
r
DS(ON)
V
GS
= V
DS
, I
D
= 250µA (Figure 11)
I
D
= 20A, V
GS
= 10V (Figure 9, 10)
I
D
= 10.5A, V
GS
= 5V (Figure 9)
I
D
= 10A, V
GS
= 4.5V (Figure 9)
1
-
-
-
-
0.042
0.058
0.065
3
0.052
0.080
0.085
V
Ω
Ω
Ω
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
SWITCHING SPECIFICATIONS
(V
GS
= 4.5V)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
V
DD
= 15V, I
D
≅
10A, R
L
= 1.50Ω,
V
GS
=
4.5V, R
GS
= 33Ω
(Figure 15)
-
-
-
-
-
-
-
14
66
16
22
-
120
-
-
-
-
57
ns
ns
ns
ns
ns
ns
R
θJC
R
θJA
(Figure 3)
TO-251, TO-252
-
-
-
-
3.3
100
o
C/W
o
C/W
59
HUF76107D3, HUF76107D3S
Electrical Specifications
PARAMETER
SWITCHING SPECIFICATIONS
(V
GS
= 10V)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
CAPACITANCE SPECIFICATIONS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
ISS
C
OSS
C
RSS
V
DS
= 25V, V
GS
= 0V, f = 1MHz
(Figure 13)
-
-
-
315
170
30
-
-
-
pF
pF
pF
Q
g(TOT)
Q
g(5)
Q
g(TH)
Q
gs
Q
gd
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 15V,I
D
≅
10.5A,
R
L
= 1.43Ω
I
g(REF)
= 1.0mA
(Figure 14)
-
-
-
-
-
8.6
4.7
0.35
1.00
2.40
10.3
5.7
0.42
-
-
nC
nC
nC
nC
nC
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
V
DD
= 15V, I
D
≅
20A, R
L
=0.75Ω,
V
GS
=
10V, R
GS
= 33Ω
(Figures 16)
-
-
-
-
-
-
-
18
30
62
20
-
75
-
-
-
-
125
ns
ns
ns
ns
ns
ns
T
A
= 25
o
C, Unless Otherwise Specified
(Continued)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
SYMBOL
V
SD
t
rr
Q
RR
TEST CONDITIONS
I
SD
= 10.5A
I
SD
= 10.5A, dI
SD
/dt = 100A/µs
I
SD
= 10.5A, dI
SD
/dt = 100A/µs
MIN
-
-
-
TYP
-
-
-
MAX
1.25
39
49
UNITS
V
ns
nC
Typical Performance Curves
Unless otherwise specified
1.2
POWER DISSIPATION MULTIPLIER
1.0
I
D
, DRAIN CURRENT (A)
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
T
A
, AMBIENT TEMPERATURE (
o
C)
25
20
V
GS
= 10V
15
V
GS
= 4.5V
10
5
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
60
HUF76107D3, HUF76107D3S
Typical Performance Curves
Unless otherwise specified
(Continued)
2
1
THERMAL IMPEDANCE
Z
θ
JC
, NORMALIZED
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
SINGLE PULSE
0.01
10
-5
10
-4
10
-2
10
-3
10
-1
t, RECTANGULAR PULSE DURATION (s)
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
10
0
10
1
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
500
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
100
V
GS
= 10V
I
I
DM
, PEAK CURRENT (A)
=
I
25
150 - T
C
125
V
GS
= 5V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
10
-5
10
-4
10
-3
10
-2
t, PULSE WIDTH (s)
10
-1
10
0
10
1
FIGURE 4. PEAK CURRENT CAPABILITY
200
I
AS
, AVALANCHE CURRENT (A)
T
J
= MAX RATED
T
C
= 25
o
C
100
200
100
I
D
, DRAIN CURRENT (A)
If R = 0
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
100µs
10
1ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
1
1
10
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
V
DSS(MAX)
= 30V
10ms
100
1
0.001
0.01
0.1
1
t
AV
, TIME IN AVALANCHE (ms)
10
100
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
SMT贴片机是表面贴装技术（Surface Mount Technology）中的重要设备，它的性能状态对电子制造的质量和效率有着决定性的影响。因此，对SMT贴片机的主要指标性能进行定期检测非常重要。以下是一些主要的检测项目： 定位精度：定位精度是SMT贴片机的核心性能指标，它直接影响到贴片的准确性。通常，我们通过重复测量贴片机在X、Y轴上的移动误差来检测其定位精度。 贴片速度：贴片速度...[详细]
C++ 属于面向对象的编程语言，OOP的思想不必多说，特别对于复杂的软件工程来说，利用OOP绝对是事半功倍，相对于传统的C来说； 当然用C来写单片机程序无可厚非，已经延续了一个传统，从大学时学的开始到工作岗位，好多人都是一直用C来做，但是既然Keil支持C++编译， 可以用C++来编写你的代码，可以利用高级语言来结构化，清晰化你的程序，为嘛不用呢！哈哈，个人看法！下面进入正题： C+...[详细]
工作这点儿事
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
