CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
PARAMETER
OFF STATE SPECIFICATIONS
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
DSS
I
DSS
I
D
= 250µA, V
GS
= 0V (Figure 11)
V
DS
= 50V, V
GS
= 0V
V
DS
= 45V, V
GS
= 0V, T
C
= 150
o
C
55
-
-
-
-
-
-
-
-
1
250
±100
V
µA
µA
nA
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
Drain to Source On Resistance
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
I
GSS
V
GS
=
±20V
V
GS(TH)
r
DS(ON)
V
GS
= V
DS
, I
D
= 250µA (Figure 10)
I
D
= 19A, V
GS
= 10V (Figure 9)
2
-
-
0 .060
4
0.070
V
Ω
R
θJC
R
θJA
(Figure 3)
TO-220
TO-251, TO-252
-
-
-
-
-
-
2.7
62
100
o
C/W
o
C/W
o
C/W
SWITCHING SPECIFICATIONS
(V
GS
= 10V)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Reverse Transfer Capacitance
Q
g(TOT)
Q
g(10)
Q
g(TH)
Q
gs
Q
gd
V
GS
= 0V to 20V
V
GS
= 0V to 10V
V
GS
= 0V to 2V
V
DD
= 30V,
I
D
≅
19A,
R
L
= 1.58Ω
I
g(REF)
= 1.0mA
(Figure13)
-
-
-
-
-
20
11
0.68
1.8
5
24
13.5
0.85
-
-
nC
nC
nC
nC
nC
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
V
DD
= 30V, I
D
≅
19A,
R
L
= 1.58Ω, V
GS
=
10V,
R
GS
= 27Ω
-
-
-
-
-
-
-
7
39
24
30
-
70
-
-
-
-
80
ns
ns
ns
ns
ns
ns
2
HUF75309P3, HUF75309D3, HUF75309D3S
Electrical Specifications
PARAMETER
CAPACITANCE SPECIFICATIONS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
ISS
C
OSS
C
RSS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 12)
-
-
-
350
150
39
-
-
-
pF
pF
pF
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
SYMBOL
V
SD
t
rr
Q
RR
I
SD
= 19A
I
SD
= 19A, dI
SD
/dt = 100A/µs
I
SD
= 19A, dI
SD
/dt = 100A/µs
TEST CONDITIONS
MIN
-
-
-
TYP
-
-
-
MAX
1.25
50
70
UNITS
V
ns
nC
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE (
o
C)
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE (
o
C)
20
I
D
, DRAIN CURRENT (A)
2
1
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
15
10
5
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
THERMAL IMPEDANCE
Z
θJC
, NORMALIZED
P
DM
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
x R
θJC
+ T
C
10
-3
10
-2
t, RECTANGULAR PULSE DURATION (s)
10
-1
10
0
10
1
SINGLE PULSE
0.01
10
-5
10
-4
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
3
HUF75309P3, HUF75309D3, HUF75309D3S
Typical Performance Curves
500
(Continued)
T
C
= 25
o
C
I
DM
, PEAK CURRENT (A)
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
175 - T
C
150
100
V
GS
= 10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
10
-5
10
-4
10
-3
10
-2
t, PULSE WIDTH (s)
10
-1
10
0
10
1
FIGURE 4. PEAK CURRENT CAPABILITY
100
I
AS
, AVALANCHE CURRENT (A)
I
D
, DRAIN CURRENT (A)
T
J
= MAX RATED
SINGLE PULSE
T
C
= 25
o
C
200
100
If R = 0
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
100µs
10
STARTING T
J
= 25
o
C
10
STARTING T
J
= 150
o
C
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
V
DSS(MAX)
= 55V
1
1
10
1ms
10ms
100
200
1
0.001
0.01
0.1
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
t
AV
, TIME IN AVALANCHE (ms)
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
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