IC ACT SERIES, QUAD 2 LINE TO 1 LINE MULTIPLEXER, TRUE OUTPUT, CQCC20, CERAMIC, LCC-20, Multiplexer/Demultiplexer
| 参数名称 | 属性值 |
| 包装说明 | QCCN, LCC20,.35SQ |
| Reach Compliance Code | unknown |
| 系列 | ACT |
| JESD-30 代码 | S-CQCC-N20 |
| JESD-609代码 | e0 |
| 长度 | 8.89 mm |
| 负载电容（CL） | 50 pF |
| 逻辑集成电路类型 | MULTIPLEXER |
| 最大I（ol） | 0.024 A |
| 功能数量 | 4 |
| 输入次数 | 2 |
| 输出次数 | 1 |
| 端子数量 | 20 |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 输出特性 | 3-STATE |
| 输出极性 | TRUE |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | QCCN |
| 封装等效代码 | LCC20,.35SQ |
| 封装形状 | SQUARE |
| 封装形式 | CHIP CARRIER |
| 电源 | 5 V |
| Prop。Delay @ Nom-Sup | 9.5 ns |
| 传播延迟（tpd） | 9.5 ns |
| 认证状态 | Not Qualified |
| 筛选级别 | MIL-PRF-38535 Class V |
| 座面最大高度 | 1.905 mm |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子面层 | TIN LEAD |
| 端子形式 | NO LEAD |
| 端子节距 | 1.27 mm |
| 端子位置 | QUAD |
| 总剂量 | 100k Rad(Si) V |
| 宽度 | 8.89 mm |
| Base Number Matches | 1 |
| 5962R8968901V2A | 5962R8968901FA | 54ACT257DM | 5962R89689012A | 5962R8968901VFA | 54ACT257MDA | 5962R8968901EA | |
|---|---|---|---|---|---|---|---|
| 描述 | IC ACT SERIES, QUAD 2 LINE TO 1 LINE MULTIPLEXER, TRUE OUTPUT, CQCC20, CERAMIC, LCC-20, Multiplexer/Demultiplexer | IC ACT SERIES, QUAD 2 LINE TO 1 LINE MULTIPLEXER, TRUE OUTPUT, CDFP16, CERAMIC, DFP-16, Multiplexer/Demultiplexer | IC ACT SERIES, QUAD 2 LINE TO 1 LINE MULTIPLEXER, TRUE OUTPUT, CDIP16, CERDIP-16, Multiplexer/Demultiplexer | IC ACT SERIES, QUAD 2 LINE TO 1 LINE MULTIPLEXER, TRUE OUTPUT, CQCC20, CERAMIC, LCC-20, Multiplexer/Demultiplexer | IC ACT SERIES, QUAD 2 LINE TO 1 LINE MULTIPLEXER, TRUE OUTPUT, CDFP16, CERAMIC, DFP-16, Multiplexer/Demultiplexer | IC ACT SERIES, QUAD 2 LINE TO 1 LINE MULTIPLEXER, TRUE OUTPUT, UUC16, Multiplexer/Demultiplexer | IC ACT SERIES, QUAD 2 LINE TO 1 LINE MULTIPLEXER, TRUE OUTPUT, CDIP16, CERAMIC, DIP-16, Multiplexer/Demultiplexer |
| 包装说明 | QCCN, LCC20,.35SQ | DFP, FL16,.3 | DIP, DIP16,.3 | QCCN, LCC20,.35SQ | DFP, FL16,.3 | DIE, | DIP, DIP16,.3 |
| Reach Compliance Code | unknown | unknow | unknown | unknown | unknown | unknown | unknown |
| 系列 | ACT | ACT | ACT | ACT | ACT | ACT | ACT |
| JESD-30 代码 | S-CQCC-N20 | R-GDFP-F16 | R-GDIP-T16 | S-CQCC-N20 | R-GDFP-F16 | X-XUUC-N16 | R-GDIP-T16 |
| 逻辑集成电路类型 | MULTIPLEXER | MULTIPLEXER | MULTIPLEXER | MULTIPLEXER | MULTIPLEXER | MULTIPLEXER | MULTIPLEXER |
| 功能数量 | 4 | 4 | 4 | 4 | 4 | 4 | 4 |
| 输入次数 | 2 | 2 | 2 | 2 | 2 | 2 | 2 |
| 输出次数 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 20 | 16 | 16 | 20 | 16 | 16 | 16 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 输出极性 | TRUE | TRUE | TRUE | TRUE | TRUE | TRUE | TRUE |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, GLASS-SEALED | UNSPECIFIED | CERAMIC, GLASS-SEALED |
| 封装代码 | QCCN | DFP | DIP | QCCN | DFP | DIE | DIP |
| 封装形状 | SQUARE | RECTANGULAR | RECTANGULAR | SQUARE | RECTANGULAR | UNSPECIFIED | RECTANGULAR |
| 封装形式 | CHIP CARRIER | FLATPACK | IN-LINE | CHIP CARRIER | FLATPACK | UNCASED CHIP | IN-LINE |
| 传播延迟（tpd） | 9.5 ns | 9.5 ns | 9.5 ns | 9.5 ns | 9.5 ns | 11.5 ns | 9.5 ns |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | YES | YES | NO | YES | YES | YES | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 端子形式 | NO LEAD | FLAT | THROUGH-HOLE | NO LEAD | FLAT | NO LEAD | THROUGH-HOLE |
| 端子位置 | QUAD | DUAL | DUAL | QUAD | DUAL | UPPER | DUAL |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | - | e0 |
| 长度 | 8.89 mm | 9.6645 mm | 19.43 mm | 8.89 mm | - | - | 19.43 mm |
| 负载电容（CL） | 50 pF | 50 pF | 50 pF | 50 pF | 50 pF | - | 50 pF |
| 最大I（ol） | 0.024 A | 0.024 A | 0.024 A | 0.024 A | 0.024 A | - | 0.024 A |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | - | 125 °C |
| 最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | - | -55 °C |
| 封装等效代码 | LCC20,.35SQ | FL16,.3 | DIP16,.3 | LCC20,.35SQ | FL16,.3 | - | DIP16,.3 |
| 电源 | 5 V | 5 V | 5 V | 5 V | 5 V | - | 5 V |
| Prop。Delay @ Nom-Sup | 9.5 ns | - | 11.5 ns | 9.5 ns | 9.5 ns | - | 9.5 ns |
| 筛选级别 | MIL-PRF-38535 Class V | MIL-STD-883 | - | MIL-STD-883 | MIL-PRF-38535 Class V | - | MIL-STD-883 |
| 座面最大高度 | 1.905 mm | 2.032 mm | 5.08 mm | 1.905 mm | 2.032 mm | - | 5.08 mm |
| 温度等级 | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | - | MILITARY |
| 端子面层 | TIN LEAD | Tin/Lead (Sn/Pb) - hot dipped | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) - hot dipped | TIN LEAD | - | Tin/Lead (Sn/Pb) - hot dipped |
| 端子节距 | 1.27 mm | 1.27 mm | 2.54 mm | 1.27 mm | 1.27 mm | - | 2.54 mm |
| 总剂量 | 100k Rad(Si) V | 100k Rad(Si) V | - | 100k Rad(Si) V | 100k Rad(Si) V | - | 100k Rad(Si) V |
| 宽度 | 8.89 mm | 6.604 mm | 7.62 mm | 8.89 mm | 6.35 mm | - | 7.62 mm |
| 是否Rohs认证 | - | 不符合 | 不符合 | 不符合 | - | - | 不符合 |
| 峰值回流温度（摄氏度） | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - | - | NOT SPECIFIED |
| 处于峰值回流温度下的最长时间 | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - | - | NOT SPECIFIED |
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