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1.5KA39/51

产品描述Trans Voltage Suppressor Diode, 1500W, 31.6V V(RWM), Unidirectional, 1 Element, Silicon, PLASTIC, CASE 1.5KA, 2 PIN
产品类别分立半导体    二极管   
文件大小75KB,共5页
制造商Vishay(威世)
官网地址http://www.vishay.com
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1.5KA39/51概述

Trans Voltage Suppressor Diode, 1500W, 31.6V V(RWM), Unidirectional, 1 Element, Silicon, PLASTIC, CASE 1.5KA, 2 PIN

1.5KA39/51规格参数

参数名称属性值
是否Rohs认证不符合
包装说明O-PALF-W2
针数2
制造商包装代码CASE 1.5KA
Reach Compliance Codeunknow
ECCN代码EAR99
其他特性EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED
最大击穿电压42.9 V
最小击穿电压35.1 V
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码O-PALF-W2
JESD-609代码e0
最大非重复峰值反向功率耗散1500 W
元件数量1
端子数量2
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
峰值回流温度(摄氏度)NOT SPECIFIED
极性UNIDIRECTIONAL
最大功率耗散5 W
认证状态Not Qualified
最大重复峰值反向电压31.6 V
表面贴装NO
技术AVALANCHE
端子面层TIN LEAD
端子形式WIRE
端子位置AXIAL
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

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1.5KA6.8 thru 1.5KA47A
Vishay General Semiconductor
PAR
®
Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
• Junction passivation optimized design
passivated anisotropic rectifier technology
• T
J
= 185 °C capability suitable for high
reliability and automotive requirement
• Available in uni-directional polarity only
• 1500 W peak pulse power capability with a
10/1000 µs waveform
Case Style 1.5KA
PRIMARY CHARACTERISTICS
V
BR
P
PPM
P
D
I
FSM
T
J
max.
6.8 V to 47 V
1500 W
6.5 W
200 A
185 °C
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
MECHANICAL DATA
Case:
Molded epoxy body over passivated junction
Molding compound meets UL 94 V-0 flammability
rating
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity:
Color band denotes cathode end
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 µs waveform
(1)
(fig. 1)
Peak pulse current at T
A
= 25 °C with a 10/1000 µs waveform
(1)
(fig. 3)
Power dissipation on infinite heatsink at T
L
= 75 °C (fig. 5)
Peak forward surge current 8.3 ms single half sine-wave
(2)
Maximum instantaneous forward voltage at 100 A
(2)
Operating junction and storage temperature range
Notes
(1)
(2)
SYMBOL
P
PPM
I
PPM
P
D
I
FSM
V
F
T
J
, T
STG
LIMIT
1500
See next table
6.5
200
3.5
- 65 to + 185
UNIT
W
A
W
A
V
°C
Non-repetitive current pulse, per fig. 3 and derated above T
A
= 25 °C per fig. 2
8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
Document Number: 88300
Revision: 09-Feb-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1

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