BY203-12S / 16S / 20S
Vishay Semiconductors
Fast Avalanche Sinterglass Diode
Features
•
•
•
•
Glass passivated junction
Hermetically sealed package
e2
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
Fast rectification and switching avalanche sinterglass
diode for TV-line output circuits and switch mode
power supply
949539
Mechanical Data
Case:
SOD-57 Sintered glass case
Terminals:
Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
approx. 369 mg
Parts Table
Part
BY203-12S
BY203-16S
BY203-20S
Type differentiation
V
R
= 1200 V; I
FAV
= 250 mA
V
R
= 1600 V; I
FAV
= 250 mA
V
R
= 2000 V; I
FAV
= 250 mA
SOD-57
SOD-57
SOD-57
Package
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse voltage = Repetitive
peak reverse voltage
Test condition
I
R
= 100
µA
Part
BY203-12S
BY203-16S
BY203-20S
Average forward current
Peak forward surge current
Junction temperature range
Storage temperature range
Non repetitive reverse
avalanche energy
I
(BR)R
= 0.4 A
t
p
= 10 ms half sinewave
Symbol
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
I
FAV
I
FSM
T
j
T
stg
E
R
Value
1200
1600
2000
250
20
-55 to +150
-55 to +175
10
Unit
V
V
V
mA
A
°C
°C
mJ
Maximum Thermal Resistance
T
amb
= 25 °C, unless otherwise specified
Parameter
Junction ambient
Test condition
l = 10 mm, T
L
= constant
maximum lead length
Symbol
R
thJA
R
thJA
Value
45
100
Unit
K/W
K/W
Document Number 86002
Rev. 1.7, 13-Apr-05
www.vishay.com
1
BY203-12S / 16S / 20S
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Reverse current
Test condition
I
F
= 200 mA, t
p
/T = 0.01,
t
p
= 0.3 ms
V
R
= 700 V
V
R
= 1000 V
V
R
= 1200 V
Breakdown voltage
I
R
= 100
µA,
t
p
/T = 0.01,
t
p
= 0.3 ms
BY203-12S
BY203-16S
BY203-20S
BY203-12S
BY203-16S
BY203-20S
Reverse recovery time
I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A
Part
Symbol
V
F
I
R
I
R
I
R
V
(BR)
V
(BR)
V
(BR)
t
rr
1200
1600
2000
300
Min
Typ.
Max
2.4
2
2
2
Unit
V
µA
µA
µA
V
V
V
ns
Typical Characteristics (Tamb = 25
°C
unless otherwise specified)
240
T
j
– Junction Temperature ( °C )
I
FAV
–Average ForwardCurrent ( A )
0.30
0.25
0.20
0.15
0.10
0.05
0.00
V
R
=V
RRM
half sinewave
0
30
60
200
160
120
80
BY203/12
40
BY203/16
0
BY203/20
R
thJA
=45K/W
l=10mm
V
RRM
V
R
R
thJA
=100K/W
PCB: d=25mm
94 9080
1600
0
400
800
1200
V
R
,V
RRM
– Reverse / Repetitive Peak Reverse
Voltage ( V )
90
120
150
16398
T
amb
– Ambient Temperature (°C )
Figure 1. Junction Temperature vs. Reverse/Repetitive Peak
Reverse Voltage
Figure 3. Max. Average Forward Current vs. Ambient Temperature
10.000
I
R
– Reverse Current (µA)
– Forward Current (A)
1000
V
R
= V
RRM
1.000
T
j
=175°C
0.100
T
j
=25°C
100
10
I
F
0.010
0.001
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
16397
1
25
16399
50
75
100
125
150
V
F
– Forward Voltage ( V )
T
j
– Junction Temperature ( °C )
Figure 2. Forward Current vs. Forward Voltage
Figure 4. Reverse Current vs. Junction Temperature
www.vishay.com
2
Document Number 86002
Rev. 1.7, 13-Apr-05
BY203-12S / 16S / 20S
Vishay Semiconductors
P – Reverse Power Dissipation ( mW)
R
500
C
D
– Diode Capacitance ( pF )
18
V
R
= V
RRM
16
14
12
10
8
6
4
2
f=1MHz
400
300
200
100
0
25
P
R
–Limit
@100%V
R
P
R
–Limit
@80%V
R
16400
50
75
100
125
150
T
j
– Junction Temperature ( °C )
0
0.1
16401
1.0
10.0
V
R
– Reverse Voltage ( V )
100.0
Figure 5. Max. Reverse Power Dissipation vs. Junction
Temperature
Figure 6. Diode Capacitance vs. Reverse Voltage
Package Dimensions in mm (Inches)
Sintered Glass Case
SOD-57
3.4 (0.133)max.
Cathode Identification
ISO Method E
18955
0.82 (0.032) max.
26(1.014) min.
4.2 (0.164) max.
26(1.014) min.
Document Number 86002
Rev. 1.7, 13-Apr-05
www.vishay.com
3
BY203-12S / 16S / 20S
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
www.vishay.com
4
Document Number 86002
Rev. 1.7, 13-Apr-05
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