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5962-8868101LX

产品描述Standard SRAM, 64KX4, 35ns, CMOS, CDIP24,
产品类别存储    存储   
文件大小141KB,共17页
制造商EDI [Electronic devices inc.]
下载文档 详细参数 选型对比 全文预览

5962-8868101LX概述

Standard SRAM, 64KX4, 35ns, CMOS, CDIP24,

5962-8868101LX规格参数

参数名称属性值
Reach Compliance Codeunknown
最长访问时间35 ns
JESD-30 代码R-GDIP-T24
内存密度262144 bit
内存集成电路类型STANDARD SRAM
内存宽度4
功能数量1
端子数量24
字数65536 words
字数代码64000
工作模式ASYNCHRONOUS
最高工作温度125 °C
最低工作温度-55 °C
组织64KX4
封装主体材料CERAMIC, GLASS-SEALED
封装形状RECTANGULAR
封装形式IN-LINE
并行/串行PARALLEL
认证状态Not Qualified
标称供电电压 (Vsup)5 V
表面贴装NO
技术CMOS
温度等级MILITARY
端子形式THROUGH-HOLE
端子位置DUAL
Base Number Matches1

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REVISIONS
LTR
A
DESCRIPTION
Added vendor CAGE number 6Y440 and 65786 to the drawing as
approved sources of supply. Removed vendor CAGE number 0BK02
from the drawing. Also deleted ESDS from the drawing. Editorial
changes throughout.
Changes in accordance with NOR 5962-R349-92.
Added device types 05 and 06. Updated drawing to include new
verbage from standard boilerplate. Figure 1 Terminal connections, for
case outline Y, changed DQ to I/O,
W
to
WE
, and
C
to
CE
.
Removed CAGE numbers 61772, 6Y440, and 66301. Added CAGE
numbers 0EU86. ksr
D
Boilerplate update, part of 5 year review. ksr
07-11-02
Robert M. Heber
DATE (YR-MO-DA)
89-09-28
APPROVED
M. A. Frye
B
C
92-10-29
97-08-19
M. A. Frye
Ray Monnin
REV
SHEET
REV
SHEET
REV STATUS
OF SHEETS
PMIC N/A
REV
SHEET
D
1
D
2
D
3
D
4
D
5
D
6
D
7
D
8
D
9
D
10
D
11
D
12
D
13
D
14
PREPARED BY
Kenneth S. Rice
CHECKED BY
Charles Reusing
STANDARD
MICROCIRCUIT
DRAWING
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
http://www.dscc.dla.mil
APPROVED BY
DA DiCenzio
DRAWING APPROVAL DATE
88-07-27
AMSC N/A
MICROCIRCUIT, MEMORY, DIGITAL,
CMOS, 64K X 4 STATIC RANDOM
ACCESS MEMORY (SRAM),
MONOLITHIC SILICON
SIZE
A
SHEET
CAGE CODE
REVISION LEVEL
D
67268
1 OF
14
5962-88681
5962-E601-07
DSCC FORM 2233
APR 97
.

5962-8868101LX相似产品对比

5962-8868101LX 5962-8868103XX 5962-8868101XX 5962-8868103LX 5962-8868104XX 5962-8868102XX 5962-8868104LX 5962-8868102LX
描述 Standard SRAM, 64KX4, 35ns, CMOS, CDIP24, Standard SRAM, 64KX4, 55ns, CMOS, CQCC28, CERAMIC, LCC-28 Standard SRAM, 64KX4, 35ns, CMOS, CQCC28, CERAMIC, LCC-28 Standard SRAM, 64KX4, 55ns, CMOS, CDIP24, Standard SRAM, 64KX4, 70ns, CMOS, CQCC28, CERAMIC, LCC-28 Standard SRAM, 64KX4, 45ns, CMOS, CQCC28, CERAMIC, LCC-28 Standard SRAM, 64KX4, 70ns, CMOS, CDIP24, Standard SRAM, 64KX4, 45ns, CMOS, CDIP24,
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown
最长访问时间 35 ns 55 ns 35 ns 55 ns 70 ns 45 ns 70 ns 45 ns
JESD-30 代码 R-GDIP-T24 R-CQCC-N28 R-CQCC-N28 R-GDIP-T24 R-CQCC-N28 R-CQCC-N28 R-CDIP-T24 R-GDIP-T24
内存密度 262144 bit 262144 bit 262144 bit 262144 bit 262144 bit 262144 bit 262144 bit 262144 bit
内存集成电路类型 STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
内存宽度 4 4 4 4 4 4 4 4
功能数量 1 1 1 1 1 1 1 1
端子数量 24 28 28 24 28 28 24 24
字数 65536 words 65536 words 65536 words 65536 words 65536 words 65536 words 65536 words 65536 words
字数代码 64000 64000 64000 64000 64000 64000 64000 64000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
最低工作温度 -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
组织 64KX4 64KX4 64KX4 64KX4 64KX4 64KX4 64KX4 64KX4
封装主体材料 CERAMIC, GLASS-SEALED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, GLASS-SEALED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, GLASS-SEALED
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 IN-LINE CHIP CARRIER CHIP CARRIER IN-LINE CHIP CARRIER CHIP CARRIER IN-LINE IN-LINE
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
标称供电电压 (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V
表面贴装 NO YES YES NO YES YES NO NO
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY
端子形式 THROUGH-HOLE NO LEAD NO LEAD THROUGH-HOLE NO LEAD NO LEAD THROUGH-HOLE THROUGH-HOLE
端子位置 DUAL QUAD QUAD DUAL QUAD QUAD DUAL DUAL
Base Number Matches 1 1 1 1 1 1 1 -
封装代码 - QCCN QCCN - QCCN QCCN DIP -
最大供电电压 (Vsup) - 5.5 V 5.5 V - 5.5 V 5.5 V 5.5 V -
最小供电电压 (Vsup) - 4.5 V 4.5 V - 4.5 V 4.5 V 4.5 V -

 
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