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1.4KESD85CATR

产品描述Trans Voltage Suppressor Diode, 1400W, 85V V(RWM), Bidirectional, 1 Element, Silicon, DO-204AH, HERMETIC SELAD, GLASS, DO-35, 2 PIN
产品类别分立半导体    二极管   
文件大小173KB,共4页
制造商Microsemi
官网地址https://www.microsemi.com
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1.4KESD85CATR概述

Trans Voltage Suppressor Diode, 1400W, 85V V(RWM), Bidirectional, 1 Element, Silicon, DO-204AH, HERMETIC SELAD, GLASS, DO-35, 2 PIN

1.4KESD85CATR规格参数

参数名称属性值
是否Rohs认证不符合
零件包装代码DO-35
包装说明HERMETIC SELAD, GLASS, DO-35, 2 PIN
针数2
Reach Compliance Codeunknow
ECCN代码EAR99
最小击穿电压94.4 V
外壳连接ISOLATED
最大钳位电压178.6 V
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码DO-204AH
JESD-30 代码O-LALF-W2
JESD-609代码e0
最大非重复峰值反向功率耗散1400 W
元件数量1
端子数量2
封装主体材料GLASS
封装形状ROUND
封装形式LONG FORM
峰值回流温度(摄氏度)NOT SPECIFIED
极性BIDIRECTIONAL
最大功率耗散0.5 W
认证状态Not Qualified
最大重复峰值反向电压85 V
表面贴装NO
技术AVALANCHE
端子面层TIN LEAD
端子形式WIRE
端子位置AXIAL
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

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1.4KESD5.0 thru 1.4KESD170CA, e3
AXIAL-LEAD TVS
SCOTTSDALE DIVISION
DESCRIPTION
These small axial-leaded TVS devices feature the ability to clamp
dangerous high voltage short-term transients such as produced by directed
or radiated electrostatic discharge phenomena before entering sensitive
component regions of a circuit design. They are small economical transient
voltage suppressors targeted primarily for short-term transients below a few
microseconds while still achieving significant peak-pulse-power capability
as illustrated in Figure #1.
APPEARANCE
WWW .
Microsemi
.C
OM
DO-35
(DO-204AH)
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
FEATURES
Excellent protection in clamping direct ESD level
transients in excess of 15,000 V per MIL-STD-750,
Method 1020 (approx. 150 ns exponential wave)
Absorbs ESD level transients* of 1400 Watts per MIL-
STD-750, Method 1020 (approx. 150 ns exponential
wave, or one microsecond transients up to 400 watts.
See Figure #1 and #2 for overall transient Peak Pulse
Power.
Clamps Transients in less than 100 picoseconds
Working Stand-off Voltage range of 5 V to 170 V
Hermetic DO-35 Package. Also available in surface
mount DO-213AA MELF package (see separate data
sheet)
RoHS Compliant devices available by adding “e3” suffix
APPLICATIONS / BENEFITS
Protects Sensitive circuits from short duration fast
rise time transients such as Electrostatic Discharge
(ESD) or Electrical Fast Transients (EFT)
Low inherent capacitance for high-frequency
applications (See Figure #4)
Flexible axial-lead mounting terminals
Bidirectional features available by adding a “C” or
“CA” suffix
MAXIMUM RATINGS
400 Watts for One Microsecond Square Wave or
1400 watts per ESD Wave form of MIL-STD-750,
method 1020.
See Surge Rating curve in Figures #1 and 2.
o
o
Operating and storage temperature –65 C to 175 C
THERMAL RESISTANCE: Less than 250
o
C/W
junction to lead at 0.375 inches from body.
DC power dissipation 500 mW at T
L
= 75
o
C at 3/8
inch (10 mm) lead length from body.
Derate at 2.3 W/
o
C above 25
o
C for P
PP
(1μs) and at
o
o
5 mW/ C above 100 C for dc power.
o
Forward Surge Current 50 amps for 1μs at T
L
= 25 C
(rise time > 100 ns).
MECHANICAL AND PACKAGING
CASE: Hermetically sealed axial-lead glass DO-35
(DO-204AH) package
FINISH: Tin-lead or RoHS Compliant matte-Tin
plating solderable per MIL-STD-750, method 2026
POLARITY: Banded end is cathode
WEIGHT: 0.2 grams (typical)
MARKING: Part number
TAPE & REEL option: Standard per EIA-296 (add
“TR” suffix to part number)
See package dimension on last page
1.4KESD5.0 thru
1.4KESD170A, e3
Copyright
©
2006
3-29-2006 REV B
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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