FIFO, 64X9, Asynchronous, CMOS, CQCC28,
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Dynex |
| 包装说明 | QCCN, LCC28,.45SQ |
| Reach Compliance Code | unknown |
| JESD-30 代码 | S-XQCC-N28 |
| JESD-609代码 | e0 |
| 内存集成电路类型 | OTHER FIFO |
| 内存宽度 | 9 |
| 端子数量 | 28 |
| 字数 | 64 words |
| 字数代码 | 64 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 组织 | 64X9 |
| 封装主体材料 | CERAMIC |
| 封装代码 | QCCN |
| 封装等效代码 | LCC28,.45SQ |
| 封装形状 | SQUARE |
| 封装形式 | CHIP CARRIER |
| 电源 | 2/6 V |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | NO LEAD |
| 端子节距 | 1.27 mm |
| 端子位置 | QUAD |
| Base Number Matches | 1 |
| MV65030A0LC | MV65030-25B0DG | MV65030-25B0DP | MV65030-25B0HP | MV65030-35B0DG | MV65030-35B0DP | MV65030-35B0HP | MV65030-35B0LC | |
|---|---|---|---|---|---|---|---|---|
| 描述 | FIFO, 64X9, Asynchronous, CMOS, CQCC28, | FIFO, 64X9, Asynchronous, CMOS, CDIP28, | FIFO, 64X9, Asynchronous, CMOS, PDIP28, | FIFO, 64X9, Asynchronous, CMOS, PQCC28, | FIFO, 64X9, Asynchronous, CMOS, CDIP28, | FIFO, 64X9, Asynchronous, CMOS, PDIP28, | FIFO, 64X9, Asynchronous, CMOS, PQCC28, | FIFO, 64X9, Asynchronous, CMOS, CQCC28, |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 包装说明 | QCCN, LCC28,.45SQ | DIP, DIP28,.6 | DIP, DIP28,.6 | QCCJ, LDCC28,.5SQ | DIP, DIP28,.6 | DIP, DIP28,.6 | QCCJ, LDCC28,.5SQ | QCCN, LCC28,.45SQ |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
| JESD-30 代码 | S-XQCC-N28 | R-XDIP-T28 | R-PDIP-T28 | S-PQCC-J28 | R-XDIP-T28 | R-PDIP-T28 | S-PQCC-J28 | S-XQCC-N28 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| 内存集成电路类型 | OTHER FIFO | OTHER FIFO | OTHER FIFO | OTHER FIFO | OTHER FIFO | OTHER FIFO | OTHER FIFO | OTHER FIFO |
| 内存宽度 | 9 | 9 | 9 | 9 | 9 | 9 | 9 | 9 |
| 端子数量 | 28 | 28 | 28 | 28 | 28 | 28 | 28 | 28 |
| 字数 | 64 words | 64 words | 64 words | 64 words | 64 words | 64 words | 64 words | 64 words |
| 字数代码 | 64 | 64 | 64 | 64 | 64 | 64 | 64 | 64 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 125 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C |
| 最低工作温度 | -55 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C |
| 组织 | 64X9 | 64X9 | 64X9 | 64X9 | 64X9 | 64X9 | 64X9 | 64X9 |
| 封装主体材料 | CERAMIC | CERAMIC | PLASTIC/EPOXY | PLASTIC/EPOXY | CERAMIC | PLASTIC/EPOXY | PLASTIC/EPOXY | CERAMIC |
| 封装代码 | QCCN | DIP | DIP | QCCJ | DIP | DIP | QCCJ | QCCN |
| 封装等效代码 | LCC28,.45SQ | DIP28,.6 | DIP28,.6 | LDCC28,.5SQ | DIP28,.6 | DIP28,.6 | LDCC28,.5SQ | LCC28,.45SQ |
| 封装形状 | SQUARE | RECTANGULAR | RECTANGULAR | SQUARE | RECTANGULAR | RECTANGULAR | SQUARE | SQUARE |
| 封装形式 | CHIP CARRIER | IN-LINE | IN-LINE | CHIP CARRIER | IN-LINE | IN-LINE | CHIP CARRIER | CHIP CARRIER |
| 电源 | 2/6 V | 2/6 V | 2/6 V | 2/6 V | 2/6 V | 2/6 V | 2/6 V | 2/6 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | NO | NO | YES | NO | NO | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | MILITARY | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | NO LEAD | THROUGH-HOLE | THROUGH-HOLE | J BEND | THROUGH-HOLE | THROUGH-HOLE | J BEND | NO LEAD |
| 端子节距 | 1.27 mm | 2.54 mm | 2.54 mm | 1.27 mm | 2.54 mm | 2.54 mm | 1.27 mm | 1.27 mm |
| 端子位置 | QUAD | DUAL | DUAL | QUAD | DUAL | DUAL | QUAD | QUAD |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 最大时钟频率 (fCLK) | - | 25 MHz | 25 MHz | 25 MHz | 35 MHz | 35 MHz | 35 MHz | 35 MHz |
| 最大压摆率 | - | 0.03 mA | 0.03 mA | 0.03 mA | 0.04 mA | 0.04 mA | 0.04 mA | 0.04 mA |
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