电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

5962-9560005MUA

产品描述Standard SRAM, 512KX8, 45ns, CMOS, CDSO32, CERAMIC, SOJ-32
产品类别存储    存储   
文件大小81KB,共2页
制造商Cypress(赛普拉斯)
下载文档 详细参数 选型对比 全文预览

5962-9560005MUA在线购买

供应商 器件名称 价格 最低购买 库存  
5962-9560005MUA - - 点击查看 点击购买

5962-9560005MUA概述

Standard SRAM, 512KX8, 45ns, CMOS, CDSO32, CERAMIC, SOJ-32

5962-9560005MUA规格参数

参数名称属性值
是否Rohs认证不符合
零件包装代码SOJ
包装说明CERAMIC, SOJ-32
针数32
Reach Compliance Codenot_compliant
ECCN代码3A001.A.2.C
最长访问时间45 ns
I/O 类型COMMON
JESD-30 代码R-CDSO-J32
JESD-609代码e0
长度20.955 mm
内存密度4194304 bit
内存集成电路类型STANDARD SRAM
内存宽度8
功能数量1
端子数量32
字数524288 words
字数代码512000
工作模式ASYNCHRONOUS
最高工作温度125 °C
最低工作温度-55 °C
组织512KX8
输出特性3-STATE
封装主体材料CERAMIC, METAL-SEALED COFIRED
封装代码SOJ
封装等效代码SOJ32,.44
封装形状RECTANGULAR
封装形式SMALL OUTLINE
并行/串行PARALLEL
峰值回流温度(摄氏度)NOT SPECIFIED
电源5 V
认证状态Not Qualified
筛选级别MIL-STD-883
座面最大高度4.064 mm
最大待机电流0.002 A
最小待机电流2 V
最大压摆率0.225 mA
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)4.5 V
标称供电电压 (Vsup)5 V
表面贴装YES
技术CMOS
温度等级MILITARY
端子面层Tin/Lead (Sn/Pb) - hot dipped
端子形式J BEND
端子节距1.27 mm
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度11.1506 mm
Base Number Matches1

文档预览

下载PDF文档
5962-95600:5/97
Revision: May 8, 1997
PRELIMINARY
5962-95600
512K x 8 Static RAM
Features
• High speed
— t
AA
= 20/25/35/45 ns
• Low active power
• Low CMOS standby power
• 2.0V Data Retention (2.0mA at 2.0V retention)
• 5V
±
10% Power Supply
• TTL-compatible inputs and outputs
• Operating temperature range (T
C
)
— T
C
= -55°C to +125°C
• Ceramic Package: 32-Pin 400mil SOJ
• Compliant to SMD 5962-95600
is provided by an active LOW chip enable (CE), an active LOW
output enable (OE), and three-state drivers. Writing to the de-
vice is accomplished by taking chip enable (CE) and write en-
able (WE) inputs LOW. Data on the eight I/O pins (I/O
0
through
I/O
7
) is then written into the location specified on the address
pins (A
0
through A
18
).
Reading from the device is accomplished by taking chip en-
able (CE) and output enable (OE) LOW while forcing write en-
able (WE) HIGH. Under these conditions, the contents of the
memory location specified by the address pins will appear on
the I/O pins.
The eight input/output pins (I/O
0
through I/O
7
) are placed in a
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), or during a write
operation (CE LOW, and WE LOW).
The 5962-95600 is available in a standard 400-mil-wide 32-pin
ceramic SOJ package.
Functional Description
The 5962-95600 is a high-performance CMOS static RAM or-
ganized as 524,288 words by 8 bits. Easy memory expansion
Logic Block Diagram
Pin Configuration
SOJ
Top View
A
18
A
16
A
14
A
12
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
I/O
0
I/O
1
I/O
2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
V
CC
A
15
A
17
WE
A
13
A
8
A
9
A
11
OE
A
10
CE
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
I/O
0
INPUT BUFFER
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
A
10
I/O
1
ROW DECODER
I/O
2
SENSE AMPS
512K x 8
ARRAY
I/O
3
I/O
4
I/O
5
5962-95600–2
CE
WE
COLUMN
DECODER
POWER
DOWN
I/O
6
I/O
7
A
11
A
12
A
13
A
14
A
15
A
16
A
17
A
18
OE
5962-95600–1
Selection Guide
5962-95600
Device Types
Maximum Access Time (ns)
Maximum Operating Current (mA)
Maximum TTL Standby Current (mA)
Maximum CMOS Standby Current (mA)
Maximum Data-retention current (mA)
Shaded areas contain advance information
01 - 04
05 - 08
05 - 08
04 / 08
20
225
60
25
10
2
03 / 07
25
225
60
25
10
2
02 / 06
35
225
60
25
10
2
01 / 05
45
225
60
25
10
2
Cypress Semiconductor Corporation
3901 North First Street
San Jose
CA 95134
408-943-2600
May 1997

5962-9560005MUA相似产品对比

5962-9560005MUA 5962-9560001MUA 5962-9560006MUA 5962-9560004MUA 5962-9560007MUA 5962-9560002MUA 5962-9560008MUA
描述 Standard SRAM, 512KX8, 45ns, CMOS, CDSO32, CERAMIC, SOJ-32 Standard SRAM, 512KX8, 45ns, CMOS, CDSO32, CERAMIC, SOJ-32 Standard SRAM, 512KX8, 35ns, CMOS, CDSO32, CERAMIC, SOJ-32 Standard SRAM, 512KX8, 20ns, CMOS, CDSO32, CERAMIC, SOJ-32 Standard SRAM, 512KX8, 25ns, CMOS, CDSO32, CERAMIC, SOJ-32 Standard SRAM, 512KX8, 35ns, CMOS, CDSO32, CERAMIC, SOJ-32 Standard SRAM, 512KX8, 20ns, CMOS, CDSO32, CERAMIC, SOJ-32
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 不符合 不符合
零件包装代码 SOJ SOJ SOJ SOJ SOJ SOJ SOJ
包装说明 CERAMIC, SOJ-32 CERAMIC, SOJ-32 CERAMIC, SOJ-32 CERAMIC, SOJ-32 CERAMIC, SOJ-32 CERAMIC, SOJ-32 CERAMIC, SOJ-32
针数 32 32 32 32 32 32 32
Reach Compliance Code not_compliant _compli not_compliant not_compliant not_compliant not_compliant not_compliant
ECCN代码 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C
最长访问时间 45 ns 45 ns 35 ns 20 ns 25 ns 35 ns 20 ns
I/O 类型 COMMON COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 代码 R-CDSO-J32 R-CDSO-J32 R-CDSO-J32 R-CDSO-J32 R-CDSO-J32 R-CDSO-J32 R-CDSO-J32
JESD-609代码 e0 e0 e0 e0 e0 e0 e0
长度 20.955 mm 20.955 mm 20.955 mm 20.955 mm 20.955 mm 20.955 mm 20.955 mm
内存密度 4194304 bit 4194304 bi 4194304 bit 4194304 bit 4194304 bit 4194304 bit 4194304 bit
内存集成电路类型 STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
内存宽度 8 8 8 8 8 8 8
功能数量 1 1 1 1 1 1 1
端子数量 32 32 32 32 32 32 32
字数 524288 words 524288 words 524288 words 524288 words 524288 words 524288 words 524288 words
字数代码 512000 512000 512000 512000 512000 512000 512000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
最低工作温度 -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
组织 512KX8 512KX8 512KX8 512KX8 512KX8 512KX8 512KX8
输出特性 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
封装主体材料 CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
封装代码 SOJ SOJ SOJ SOJ SOJ SOJ SOJ
封装等效代码 SOJ32,.44 SOJ32,.44 SOJ32,.44 SOJ32,.44 SOJ32,.44 SOJ32,.44 SOJ32,.44
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
电源 5 V 5 V 5 V 5 V 5 V 5 V 5 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
筛选级别 MIL-STD-883 MIL-STD-883 MIL-STD-883 MIL-STD-883 MIL-STD-883 MIL-STD-883 MIL-STD-883
座面最大高度 4.064 mm 4.064 mm 4.064 mm 4.064 mm 4.064 mm 4.064 mm 4.064 mm
最大待机电流 0.002 A 0.025 A 0.002 A 0.025 A 0.002 A 0.025 A 0.002 A
最小待机电流 2 V 4.5 V 2 V 4.5 V 2 V 4.5 V 2 V
最大压摆率 0.225 mA 0.225 mA 0.225 mA 0.225 mA 0.225 mA 0.225 mA 0.225 mA
最大供电电压 (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
最小供电电压 (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
标称供电电压 (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V 5 V
表面贴装 YES YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY
端子面层 Tin/Lead (Sn/Pb) - hot dipped Tin/Lead (Sn/Pb) - hot dipped Tin/Lead (Sn/Pb) - hot dipped Tin/Lead (Sn/Pb) - hot dipped Tin/Lead (Sn/Pb) - hot dipped Tin/Lead (Sn/Pb) - hot dipped Tin/Lead (Sn/Pb) - hot dipped
端子形式 J BEND J BEND J BEND J BEND J BEND J BEND J BEND
端子节距 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
宽度 11.1506 mm 11.1506 mm 11.1506 mm 11.1506 mm 11.1506 mm 11.1506 mm 11.1506 mm
Base Number Matches 1 1 1 1 1 1 1
请问什么叫做In-box driver?谢谢!
最近看新版本得WDK关于驱动部分的内容,看到一个叫做In-box driver的名词,请问这指的是什么类型的驱动?或者驱动的什么方面内容?谢谢!...
guoguzh 嵌入式系统
PWM波的占空比?
改变PWM波的占空比可以让电机转,改变PWM波的周期可以 调速。假如周期为500,我让占空比从10变到490和从240变到 260会有什么不一样?请各位大侠不吝赐教,谢谢! ...
caviler 模拟与混合信号
arm7(LPC2103)键盘测试程序,为什么总是进不了中断呢?兄弟们进来帮帮
/***************************************************************************** * uarttest.c: main C entry file for Philips LPC214x Family Microprocessors * * Copyright(C ......
wenqiang ARM技术
C2000系列(28335)DSP的Flash_API的限制
API可以: 1、可以运行在静态内部SARAM中 2、配置真确的CPU频率 3、根据Flash_API列表去集成API到应用中 4、初始化PLL控制寄存器,在使用API函数前等待PLL锁住 5、初始化API回调函数指针( ......
Aguilera 微控制器 MCU
急急急
这个错误是怎么回事啊?经常碰见,msp430f5529,ccs软件...
yngjinping 微控制器 MCU
物联网+二维码识别+电机驱动方案
现在有一案子,需要二维码识别,之后去驱动电机转动,由于安全性,要与连接网络与服务器通信; 我现在的想是是GPRS模块+ 二维码识别模块+电机驱动电路+主控MCU;但是这样成本高; 坛友们有没 ......
viphotman 电机控制

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 231  1685  2349  662  244  58  33  8  3  22 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved