PR
ion. hange.
icat
ecif ect to c
p
al s subj
a fin
e
not mits ar
is
i
This etric l
m
ice:
Not e para
om
S
IMI
EL
ARY
N
MITSUBISHI Pch POWER MOSFET
FX6SMJ-3
HIGH-SPEED SWITCHING USE
FX6SMJ-3
OUTLINE DRAWING
15.9 max
Dimensions in mm
4.5
1.5
4
2
2
4
20.0
φ
3.2
5.0
19.5 min
4.4
G
0.6
2.8
1.0
1
2
3
5.45
5.45
4
3
•
4V DRIVE
•
V
DSS
............................................................ –150V
•
r
DS (ON) (MAX)
................................................ 0.53Ω
•
I
D
..................................................................... –6A
•
Integrated Fast Recovery Diode (TYP.) ........ 100ns
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
1
1
2
3
4
2 4
GATE
DRAIN
SOURCE
DRAIN
TO-3P
MAXIMUM RATINGS
Symbol
V
DSS
V
GSS
I
D
I
DM
I
DA
I
S
I
SM
P
D
T
ch
T
stg
—
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
V
GS
= 0V
V
DS
= 0V
Conditions
Ratings
–150
±20
–6
–24
–6
–6
–24
45
–55 ~ +150
–55 ~ +150
4.8
Unit
V
V
A
A
A
A
A
W
°C
°C
g
Jan.1999
Avalanche drain current (Pulsed) L = 100µH
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
Typical value
PR
ion. hange.
icat
ecif ect to c
p
al s subj
a fin
e
not mits ar
is
i
This etric l
m
ice:
Not e para
om
S
IMI
EL
ARY
N
MITSUBISHI Pch POWER MOSFET
FX6SMJ-3
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol
V
(BR) DSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-c)
t
rr
Parameter
(Tch = 25°C)
Test conditions
I
D
= –1mA, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= –150V, V
GS
= 0V
I
D
= –1mA, V
DS
= –10V
I
D
= –3A, V
GS
= –10V
I
D
= –3A, V
GS
= –4V
I
D
= –3A, V
GS
= –10V
I
D
= –3A, V
DS
= –10V
V
DS
= –10V, V
GS
= 0V, f = 1MHz
Limits
Min.
–150
—
—
–1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
—
—
–1.5
0.41
0.45
–1.23
7.9
2420
152
69
14
18
156
58
–1.0
—
100
Max.
—
±0.1
–0.1
–2.0
0.53
0.59
–1.59
—
—
—
—
—
—
—
—
–1.5
2.78
—
Unit
V
µA
mA
V
Ω
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
V
DD
= –80V, I
D
= –3A, V
GS
= –10V, R
GEN
= R
GS
= 50Ω
I
S
= –3A, V
GS
= 0V
Channel to case
I
S
= –6A, dis/dt = 100A/µs
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
50
POWER DISSIPATION P
D
(W)
DRAIN CURRENT I
D
(A)
MAXIMUM SAFE OPERATING AREA
–10
2
–7
–5
–3
–2
40
–10
1
–7
–5
–3
–2
tw = 10µs
30
100µs
1ms
10ms
T
C
= 25°C
Single Pulse
DC
20
–10
0
–7
–5
–3
–2
10
0
0
50
100
150
200
–10
–1
–2 –3 –5–7
–10
1
–2 –3 –5–7
–10
2
–2 –3 –5–7
–10
3
–2
CASE TEMPERATURE T
C
(°C)
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
–20
V
GS
= –10V
OUTPUT CHARACTERISTICS
(TYPICAL)
–10
V
GS
=
–10V
–3.5V
T
C
= 25°C
Pulse Test
–6V
–5V
–4V
DRAIN CURRENT I
D
(A)
–16
DRAIN CURRENT I
D
(A)
–6V
–5V
–4V
–8
–12
T
C
= 25°C
Pulse Test
–6
–3V
–8
–3V
–4
P
D
= 45W
–4
P
D
= 45W
–2
–2.5V
0
0
–4
–8
–12
–16
–20
0
0
–2
–4
–6
–8
–10
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN-SOURCE VOLTAGE V
DS
(V)
Jan.1999
PR
ion. hange.
icat
ecif ect to c
p
al s subj
a fin
e
not mits ar
is
i
This etric l
m
ice:
Not e para
om
S
IMI
EL
ARY
N
MITSUBISHI Pch POWER MOSFET
FX6SMJ-3
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
1.0
DRAIN-SOURCE ON-STATE
RESISTANCE r
DS (ON)
(Ω)
T
C
= 25°C
Pulse Test
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
–20
DRAIN-SOURCE ON-STATE
VOLTAGE V
DS (ON)
(V)
T
C
= 25°C
Pulse Test
–16
0.8
–12
0.6
V
GS
= –4V
–10V
–8
I
D
= –12A
0.4
–4
–6A
–3A
0.2
0
–10
–1
–2 –3 –5–7
–10
0
–2 –3 –5–7
–10
1
–2 –3 –5–7
–10
2
DRAIN CURRENT I
D
(A)
0
0
–2
–4
–6
–8
–10
GATE-SOURCE VOLTAGE V
GS
(V)
TRANSFER CHARACTERISTICS
(TYPICAL)
–20
T
C
= 25°C
V
DS
= –10V
Pulse Test
2
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
V
DS
= –10V
Pulse Test
T
C
= 25°C
75°C
125°C
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER
ADMITTANCE
y
fs
(S)
–16
10
1
7
5
3
2
–12
–8
10
0
7
5
3
–4
0
0
–2
–4
–6
–8
–10
2
–7
–10
–1
–2 –3
–5 –7
–10
0
–2 –3
–5 –7
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
3
T
C
h = 25°C
f = 1MH
Z
10
3
V
GS
= 0V
7
5
3
2
2
Ciss
SWITCHING CHARACTERISTICS
(TYPICAL)
10
3
T
C
h = 25°C
7 V
DD
= –80V
5 V
GS
= –10V
R
GEN
= R
GS
= 50Ω
3
2
t
d(off)
SWITCHING TIME (ns)
CAPACITANCE
Ciss, Coss, Crss (pF)
10
2
7
5
3
2
t
r
t
d(on)
t
f
10
2
7
5
3
Coss
Crss
–2 –3
–5 –7
–10
1
–2 –3
–5 –7
–10
2
–10
0
10
1
–7
–10
–1
–2 –3
–5 –7
–10
0
–2 –3
–5 –7
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN CURRENT I
D
(A)
Jan.1999
PR
ion. hange.
icat
ecif ect to c
p
al s subj
a fin
e
not mits ar
is
i
This etric l
m
ice:
Not e para
om
S
IMI
EL
ARY
N
MITSUBISHI Pch POWER MOSFET
FX6SMJ-3
HIGH-SPEED SWITCHING USE
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
–20
V
GS
= 0V
Pulse Test
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
–10
T
C
h = 25°C
I
D
= –6A
SOURCE CURRENT I
S
(A)
–8
V
DS
= –50V
–80V
–100V
–16
T
C
= 125°C
75°C
25°C
–6
–12
–4
–8
–2
–4
0
0
10
20
30
40
50
0
0
–0.4
–0.8
–1.2
–1.6
–2.0
GATE CHARGE Q
g
(nC)
SOURCE-DRAIN VOLTAGE V
SD
(V)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(25°C)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(t°C)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
10
1
V
GS
= –10V
7 I
D
= 1/2I
D
5 Pulse Test
3
2
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
–4.0
V
DS
= –10V
I
D
= –1mA
GATE-SOURCE THRESHOLD
VOLTAGE V
GS (th)
(V)
–3.2
–2.4
10
0
7
5
3
2
–1.6
–0.8
10
–1
–50
0
50
100
150
0
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(25°C)
TRANSIENT THERMAL IMPEDANCE Z
th (ch–c)
(°C/W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(t°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
V
GS
= 0V
I
D
= –1mA
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
10
1
7
5
D = 1.0
3
2 0.5
1.2
10
0
0.2
7 0.1
5
3
2
0.05
0.02
0.01
Single Pulse
P
DM
tw
T
D
=
tw
T
1.0
0.8
10
–1
7
5
3
2
0.6
0.4
–50
0
50
100
150
10
–2 –4
10
2 3 5 7
10
–3
2 3 5 7
10
–2
2 3 5 7
10
–1
2 3 5 7
10
0
2 3 5 7
10
1
2 3 5 7
10
2
PULSE WIDTH t
w
(s)
Jan.1999
CHANNEL TEMPERATURE Tch (°C)
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
