1M x 16-Bit EDO- Dynamic RAM
(1k & 4k -Refresh)
HYB3116165BSJ/BST(L)-50/-60/-70
HYB3118165BSJ/BST(L)-50/-60/-70
Advanced Information
•
•
•
1 048 576 words by 16-bit organization
0 to 70 °C operating temperature
Performance:
-50
tRAC
tCAC
tAA
tRC
tHPC
RAS access time
CAS access time
Access time from address
Read/Write cycle time
Hyper page mode (EDO)
cycle time
50
13
25
84
20
-60
60
15
30
104
25
-70
70
20
35
124
30
ns
ns
ns
ns
ns
•
•
•
•
•
•
•
•
•
•
Single + 3.3 V (± 0.3 V) supply
Low power dissipation
max. 720 active mW ( HYB3118165BSJ/BST-50)
max. 648 active mW ( HYB3118165BSJ/BST-60)
max. 576 active mW ( HYB3118165BSJ/BST-70)
max. 360 active mW ( HYB3116165BSJ/BST-50)
max. 324 active mW ( HYB3116165BSJ/BST-60)
max. 288 active mW ( HYB3116165BSJ/BST-70)
7.2 mW standby (LV-TTL)
3.6 mW standby (LV-CMOS)
720
µW
standby for L-version
Output unlatched at cycle end allows two-dimensional chip selection
Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh,
self refresh
Hyper page mode (EDO) capability
2 CAS / 1 WE
All inputs, outputs and clocks fully LV-TTL-compatible
1024 refresh cycles / 16 ms for HYB 3118165BSJ
4096 refresh cycles / 64 ms for HYB 3116165BSJ
Plastic Package:
P-SOJ-42-1 400 mil
P-TSOPII-50/44-1 400mil
Semiconductor Group
1
1.96
1M x 16-Bit EDO- Dynamic RAM
(1k & 4k -Refresh)
HYB3116165BSJ/BST(L)-50/-60/-70
HYB3118165BSJ/BST(L)-50/-60/-70
Advanced Information
•
•
•
1 048 576 words by 16-bit organization
0 to 70 °C operating temperature
Performance:
-50
tRAC
tCAC
tAA
tRC
tHPC
RAS access time
CAS access time
Access time from address
Read/Write cycle time
Hyper page mode (EDO)
cycle time
50
13
25
84
20
-60
60
15
30
104
25
-70
70
20
35
124
30
ns
ns
ns
ns
ns
•
•
•
•
•
•
•
•
•
•
Single + 3.3 V (± 0.3 V) supply
Low power dissipation
max. 720 active mW ( HYB3118165BSJ/BST-50)
max. 648 active mW ( HYB3118165BSJ/BST-60)
max. 576 active mW ( HYB3118165BSJ/BST-70)
max. 360 active mW ( HYB3116165BSJ/BST-50)
max. 324 active mW ( HYB3116165BSJ/BST-60)
max. 288 active mW ( HYB3116165BSJ/BST-70)
7.2 mW standby (LV-TTL)
3.6 mW standby (LV-CMOS)
720
µW
standby for L-version
Output unlatched at cycle end allows two-dimensional chip selection
Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh,
self refresh
Hyper page mode (EDO) capability
2 CAS / 1 WE
All inputs, outputs and clocks fully LV-TTL-compatible
1024 refresh cycles / 16 ms for HYB 3118165BSJ
4096 refresh cycles / 64 ms for HYB 3116165BSJ
Plastic Package:
P-SOJ-42-1 400 mil
P-TSOPII-50/44-1 400mil
Semiconductor Group
1
1.96
HYB3116(8)165BSJ/BST(L)-50/-60/-70
3.3V 1M x 16 EDO-DRAM
The HYB 3116(8)165BSJ/BST is a 16 MBit dynamic RAM organized as 1 048 576 words by 16 bits.
The HYB 3116(8)165BSJ/BST utilizes a submicron CMOS silicon gate process technology, as well
as advanced circuit techniques to provide wide operating margins, both internally and for the system
user. Multiplexed address inputs permit the HYB 3116(8)165BSJ/BST to be packaged in standard
SOJ-42 and TSOPII-50/44 plastic package with 400mil width. These packages provide high system
bit densities and are compatible with commonly used automatic testing and insertion equipment.
System-oriented features include single + 3.3 V (± 0.3 V) power supply, direct interfacing with high-
performance logic device families. The HYB3116166BSTL parts have a very low power „sleep
mode“ supported by Self Refresh.
Ordering Information
Type
HYB 3116165BSJ-50
HYB 3116165BSJ-60
HYB 3116165BSJ-70
HYB 3118165BSJ-50
HYB 3118165BSJ-60
HYB 3118165BSJ-70
HYB 3116165BST-50
HYB 3116165BST-60
HYB 3116165BST-70
HYB 3118165BST-50
HYB 3118165BST-60
HYB 3118165BST-70
Q67100-Q1167
Q67100-Q1168
Q67100-Q1188
Q67100-Q1190
Q67100-Q1192
Ordering Code
on request
on request
on request
Q67100-Q1159
Q67100-Q1160
Package
P-SOJ-42 400 mil
P-SOJ-42 400 mil
P-SOJ-42 400 mil
P-SOJ-42 400 mil
P-SOJ-42 400 mil
P-SOJ-42 400 mil
P-TSOPII-50/44 400 mil
P-TSOPII-50/44 400 mil
P-TSOPII-50/44 400 mil
P-TSOPII-50/44 400 mil
P-TSOPII-50/44 400 mil
P-TSOPII-50/44 400 mil
Descriptions
DRAM (access time 50 ns)
DRAM (access time 60 ns)
DRAM (access time 70 ns)
DRAM (access time 50 ns)
DRAM (access time 60 ns)
DRAM (access time 70 ns)
DRAM (access time 50 ns)
DRAM (access time 60 ns)
DRAM (access time 70 ns)
DRAM (access time 50 ns)
DRAM (access time 60 ns)
DRAM (access time 70 ns)
Pin Names
A0 to A9
A0 to A9
A0 to A11
A0 to A7
RAS
OE
I/O1-I/O16
UCAS
LCAS
WE
V
CC
V
SS
N .C .
Row Address Inputs for 1k-refresh version HYB3118165BSJ/BST
Column Addess Inputs for 1k-refresh version HYB3118165BSJ/BST
Row Address Inputs for 4k-refresh version HYB3116165BSJ/BST
Column Address Inputs for 4k-refresh version HYB3116165BSJ/BST
Row Address Strobe
Output Enable
Data Input/Output
Upper Column Address Strobe
Lower Column Address Strobe
Read/Write Input
P o w e r S u p p ly (+ 3 .3 V )
G ro u n d (0 V )
n o t c o n n e c te d
Semiconductor Group
2
HYB3116(8)165BSJ/BST(L)-50/-60/-70
3.3V 1M x 16 EDO-DRAM
The HYB 3116(8)165BSJ/BST is a 16 MBit dynamic RAM organized as 1 048 576 words by 16 bits.
The HYB 3116(8)165BSJ/BST utilizes a submicron CMOS silicon gate process technology, as well
as advanced circuit techniques to provide wide operating margins, both internally and for the system
user. Multiplexed address inputs permit the HYB 3116(8)165BSJ/BST to be packaged in standard
SOJ-42 and TSOPII-50/44 plastic package with 400mil width. These packages provide high system
bit densities and are compatible with commonly used automatic testing and insertion equipment.
System-oriented features include single + 3.3 V (± 0.3 V) power supply, direct interfacing with high-
performance logic device families. The HYB3116166BSTL parts have a very low power „sleep
mode“ supported by Self Refresh.
Ordering Information
Type
HYB 3116165BSJ-50
HYB 3116165BSJ-60
HYB 3116165BSJ-70
HYB 3118165BSJ-50
HYB 3118165BSJ-60
HYB 3118165BSJ-70
HYB 3116165BST-50
HYB 3116165BST-60
HYB 3116165BST-70
HYB 3118165BST-50
HYB 3118165BST-60
HYB 3118165BST-70
Q67100-Q1167
Q67100-Q1168
Q67100-Q1188
Q67100-Q1190
Q67100-Q1192
Ordering Code
on request
on request
on request
Q67100-Q1159
Q67100-Q1160
Package
P-SOJ-42 400 mil
P-SOJ-42 400 mil
P-SOJ-42 400 mil
P-SOJ-42 400 mil
P-SOJ-42 400 mil
P-SOJ-42 400 mil
P-TSOPII-50/44 400 mil
P-TSOPII-50/44 400 mil
P-TSOPII-50/44 400 mil
P-TSOPII-50/44 400 mil
P-TSOPII-50/44 400 mil
P-TSOPII-50/44 400 mil
Descriptions
DRAM (access time 50 ns)
DRAM (access time 60 ns)
DRAM (access time 70 ns)
DRAM (access time 50 ns)
DRAM (access time 60 ns)
DRAM (access time 70 ns)
DRAM (access time 50 ns)
DRAM (access time 60 ns)
DRAM (access time 70 ns)
DRAM (access time 50 ns)
DRAM (access time 60 ns)
DRAM (access time 70 ns)
Pin Names
A0 to A9
A0 to A9
A0 to A11
A0 to A7
RAS
OE
I/O1-I/O16
UCAS
LCAS
WE
V
CC
V
SS
N .C .
Row Address Inputs for 1k-refresh version HYB3118165BSJ/BST
Column Addess Inputs for 1k-refresh version HYB3118165BSJ/BST
Row Address Inputs for 4k-refresh version HYB3116165BSJ/BST
Column Address Inputs for 4k-refresh version HYB3116165BSJ/BST
Row Address Strobe
Output Enable
Data Input/Output
Upper Column Address Strobe
Lower Column Address Strobe
Read/Write Input
P o w e r S u p p ly (+ 3 .3 V )
G ro u n d (0 V )
n o t c o n n e c te d
Semiconductor Group
2
HYB3116(8)165BSJ/BST(L)-50/-60/-70
3.3V 1M x 16 EDO-DRAM
P-SOJ-42 (400 mil)
Vcc
I/O1
I/O2
I/O3
I/O4
Vcc
I/O5
I/O6
I/O7
I/O8
N.C.
N.C.
WE
RAS
A11/NC
A10/NC
A0
A1
A2
A3
Vcc
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
Vss
I/O1
I/O16
I/O2
I/O3
I/O15
I/O4
I/O14
Vcc
I/O13
I/O5
Vss
I/O6
I/O12
I/O7
I/O11
I/O8
I/O10
N.C.
I/O9
N.C.
LCAS
N.C.
UCAS
N.C.
OE
WE
A9
RAS
A11/N.C.
A8
A10.N.C.
A7
A0
A6
A1
A5
A2
A4
A3
Vss
Vcc
Vcc
P-TSOPII-50/44 (400mil)
1
2
3
4
5
6
7
8
9
10
11
50
49
48
47
46
45
44
43
42
41
40
Vss
I/O16
I/O15
I/O14
I/O13
Vss
I/O12
I/O11
I/O10
I/O9
N.C.
15
16
17
18
19
20
21
22
23
24
25
36
35
34
33
32
31
30
29
28
27
26
N.C.
LCAS
UCAS
OE
A9
A8
A7
A6
A5
A4
Vss
*) A11 and A10 are not connected for HYB3118165BSJ/BST (1k-refresh version)
Truth Table
RAS
H
L
L
L
L
L
L
L
L
LCAS
H
H
L
H
L
L
H
L
L
UCAS
H
H
H
L
L
H
L
L
L
WE
H
H
H
H
H
L
L
L
H
OE
H
H
L
L
L
H
H
H
H
I/O1-I/O8
High-Z
High-Z
Dout
High-Z
Dout
Din
Don't care
Din
High-Z
I/O9-I/O16
High-Z
High-Z
High-Z
Dout
Dout
Don't care
Din
Din
High-Z
Operation
Standby
Refresh
Lower byte read
Upper byte read
Word read
Lower byte write
Upper byte write
Word write
NOP
Semiconductor Group
3
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