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HMJE2955T

产品描述PNP EPITAXIAL PLANAR TRANSISTOR
产品类别分立半导体    晶体管   
文件大小39KB,共4页
制造商HSMC
官网地址http://www.hsmc.com.tw/
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HMJE2955T概述

PNP EPITAXIAL PLANAR TRANSISTOR

HMJE2955T规格参数

参数名称属性值
厂商名称HSMC
包装说明,
Reach Compliance Codeunknow
最大集电极电流 (IC)10 A
配置Single
最小直流电流增益 (hFE)5
最高工作温度150 °C
极性/信道类型PNP
最大功率耗散 (Abs)75 W
表面贴装NO
标称过渡频率 (fT)2 MHz

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6736
Issued Date : 1992.12.15
Revised Date : 2002.04.03
Page No. : 1/4
HMJE2955T
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HMJE2955T is designed for general purpose of amplifier and
switching applications.
Absolute Maximum Ratings
(Ta=25°C)
TO-220
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature ...................................................................................... 150
°C
Maximum
Maximum Power Dissipation
Total Power Dissipation (Tc=25°C)..................................................................................... 75 W
Total Power Dissipation (Ta=25°C).................................................................................... 0.6 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage...................................................................................... -70 V
BVCEO Collector to Emitter Voltage................................................................................... -60 V
BVEBO Emitter to Base Voltage........................................................................................... -5 V
IC Collector Current ........................................................................................................... -10 A
IB Base Current .................................................................................................................... -6 A
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEX
ICEO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(on)
*hFE1
*hFE2
fT
Min.
-70
-60
-5
-
-
-
-
-
-
-
20
5
2
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-1
-1
-700
-5
-1.1
-8
-1.8
100
-
-
Unit
V
V
V
mA
mA
uA
mA
V
V
V
Test Conditions
IC=-10mA, IE=0
IC=-200mA, IB=0
IE=-1mA, IC=0
VCB=-70V, IE=0
VCE=-70V, VEB(off)=-1.5V
VCE=-30V, IB=0
VEB=-5V, IC=0
IC=-4A, IB=-400mA
IC=-10A, IB=-3.3A
IC=-4A, VCE=-4V
IC=-4A, VCE=-4V
IC=-10A, VCE=-4V
VCE=-10V, IC=-500mA, f=0.5MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
MHz
HMJE2955T
HSMC Product Specification

 
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