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IRG4RC10KDTRR: 产品描述Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3; 产品类别分立半导体晶体管; 文件大小317KB，共12页; 制造商International Rectifier （ Infineon ）; 官网地址http://www.irf.com/

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IRG4RC10KDTRR概述

Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3

IRG4RC10KDTRR规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	International Rectifier （ Infineon ）
零件包装代码	TO-252AA
包装说明	SMALL OUTLINE, R-PSSO-G2
针数	3
Reach Compliance Code	compliant
其他特性	ULTRA FAST SOFT RECOVERY
外壳连接	COLLECTOR
最大集电极电流 (IC)	9 A
集电极-发射极最大电压	600 V
配置	SINGLE WITH BUILT-IN DIODE
最大降落时间（tf）	210 ns
门极发射器阈值电压最大值	6.5 V
门极-发射极最大电压	20 V
JEDEC-95代码	TO-252AA
JESD-30 代码	R-PSSO-G2
JESD-609代码	e0
湿度敏感等级	1
元件数量	1
端子数量	2
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
峰值回流温度（摄氏度）	NOT SPECIFIED
极性/信道类型	N-CHANNEL
最大功率耗散 (Abs)	38 W
认证状态	Not Qualified
表面贴装	YES
端子面层	Tin/Lead (Sn/Pb)
端子形式	GULL WING
端子位置	SINGLE
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管应用	MOTOR CONTROL
晶体管元件材料	SILICON
标称断开时间 (toff)	410 ns
标称接通时间 (ton)	78 ns
Base Number Matches	1

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PD - 95035

IRG4RC10KDPbF

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

• Short Circuit Rated UltraFast: Optimized for

high operating frequencies >5.0 kHz , and Short

Circuit Rated to 10µs @ 125°C, V

= 15V

• Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than

previous generation

• IGBT co-packaged with HEXFRED

ultrafast,

ultra-soft-recovery anti-parallel diodes for use in

bridge configurations

• Industry standard TO-252AA package

• Lead-Free

Short Circuit Rated

UltraFast IGBT

Features

CES

= 600V

CE(on) typ.

= 2.39V

= 15V, I

= 5.0A

n-channel

Benefits

Absolute Maximum Ratings

CES

@ T

= 25°C

@ T

= 100°C

@ T

= 100°C

@ T

= 25°C

@ T

= 100°C

STG

• Latest generation 4 IGBT's offer highest power density

motor controls possible

• HEXFRED

diodes optimized for performance with IGBTs.

Minimized recovery characteristics reduce noise, EMI and

switching losses

• For hints see design tip 97003

Parameter

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

Clamped Inductive Load Current

Diode Continuous Forward Current

Diode Maximum Forward Current

Short Circuit Withstand Time

Gate-to-Emitter Voltage

Maximum Power Dissipation

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 sec.

D-PAK

TO-252AA

Max.

600

9.0

5.0

4.0

± 20

-55 to +150

300 (0.063 in. (1.6mm) from case)

Units

µs

°C

Thermal Resistance

Parameter

θJC

θJA

Junction-to-Case - IGBT

Junction-to-Case - Diode

Junction-to-Ambient (PCB mount)*

Weight

Typ.

–––

0.3 (0.01)

Max.

3.3

7.0

–––

Units

°C/W

g (oz)

When mounted on 1" square PCB (FR-4 or G-10 Material).

For recommended footprint and soldering techniques refer to application note #AN-994

www.irf.com

2/20/04

IRG4RC10KDTRR相似产品对比

	IRG4RC10KDTRR	IRG4RC10KDTRPBF	IRG4RC10KDTRL	IRG4RC10KDTRRPBF	IRG4RC10KDTRLPBF
描述	Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3	igbt modules 600v 8.500a	Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3	Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3	Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3
是否Rohs认证	不符合	符合	不符合	符合	符合
厂商名称	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
零件包装代码	TO-252AA	TO-252AA	TO-252AA	TO-252AA	TO-252AA
包装说明	SMALL OUTLINE, R-PSSO-G2	LEAD FREE, DPAK-3	SMALL OUTLINE, R-PSSO-G2	LEAD FREE, DPAK-3	LEAD FREE, DPAK-3
针数	3	3	3	3	3
Reach Compliance Code	compliant	unknown	compliant	unknown	unknown
最大集电极电流 (IC)	9 A	9 A	9 A	9 A	9 A
集电极-发射极最大电压	600 V	600 V	600 V	600 V	600 V
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最大降落时间（tf）	210 ns	210 ns	210 ns	210 ns	210 ns
门极发射器阈值电压最大值	6.5 V	6.5 V	6.5 V	6.5 V	6.5 V
门极-发射极最大电压	20 V	20 V	20 V	20 V	20 V
JEDEC-95代码	TO-252AA	TO-252AA	TO-252AA	TO-252AA	TO-252AA
JESD-30 代码	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2
JESD-609代码	e0	e3	e0	e3	e3
湿度敏感等级	1	1	1	1	1
元件数量	1	1	1	1	1
端子数量	2	2	2	2	2
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
峰值回流温度（摄氏度）	NOT SPECIFIED	260	NOT SPECIFIED	260	260
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
最大功率耗散 (Abs)	38 W	38 W	38 W	38 W	38 W
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES	YES	YES
端子面层	Tin/Lead (Sn/Pb)	MATTE TIN OVER NICKEL	Tin/Lead (Sn/Pb)	MATTE TIN OVER NICKEL	MATTE TIN OVER NICKEL
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子位置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
处于峰值回流温度下的最长时间	NOT SPECIFIED	30	NOT SPECIFIED	30	30
晶体管应用	MOTOR CONTROL	MOTOR CONTROL	MOTOR CONTROL	MOTOR CONTROL	MOTOR CONTROL
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON
标称断开时间 (toff)	410 ns	410 ns	410 ns	410 ns	410 ns
标称接通时间 (ton)	78 ns	78 ns	78 ns	78 ns	78 ns
Base Number Matches	1	1	1	1	1
其他特性	ULTRA FAST SOFT RECOVERY	ULTRA FAST SOFT RECOVERY	ULTRA FAST SOFT RECOVERY	-	-
外壳连接	COLLECTOR	COLLECTOR	COLLECTOR	-	-

IRG4RC10KDTRR

IRG4RC10KDTRR概述

IRG4RC10KDTRR规格参数

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